About
EducationWorkExperienceResumeOther Appointments Jianjun Gao(M’05-SM’06) was born in Hebei province‚ P.R.China in 1968. He received the B.Eng. and Ph.D. degrees from the Tsinghua University‚ in 1991 and 1999‚ respectively‚ and M. Eng. Degree from Hebei semiconductor research institute‚ in 1994.
From 1999 to 2001‚ he was a Post-Doctoral Research Fellow at the Microelectronics R&D Center‚ Chinese Academy of Sciences developing PHEMT optical modulator driver. In 2001‚ he joined the school of Electrical and Electronic Engineering‚ Nanyang Technological University (NTU)‚ Singapore‚ as a Research Fellow in semiconductor device modeling and on wafer measurement. In 2003‚ he joined the Institute for High-Frequency and Semiconductor System Technologies‚ Berlin University of Technology‚ Germany‚ as a research associate working on the InP HBT modeling and circuit design for high speed optical communication. In 2004‚ he joined the Electronics Engineering Department‚ Carleton University‚ Canada‚ as Post-doctor Fellow working on the semiconductor neural network modeling technique. From 2004 to 2007‚ He was a Full Professor of radio engineering department at the Southeast University‚ Nanjing‚ China. Since 2007‚ he has been a Full professor of school of information science and technology‚ East China Normal University‚ Shanghai‚ China. He has authored RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors (USA SciTech Publishing 2009). His main areas of research are characterization‚ modeling and on wafer measurement of microwave semiconductor devices‚ optoelectronics device and high-speed integrated circuit for radio frequency and optical communication.
Dr.Gao is currently a member of the editorial board of IEEE Transaction on Microwave Theory and Techniques.
Books
1. Jianjun Gao‚ “RF and Microwave Modeling and Measurement Techniques for Field Effect Transistor” SciTech Publisher‚ 2009 USA (350 pages )
2. Jianjun Gao‚ “ Optoelectronic Integrated Circuit Design and Device Modeling‚” John Wiley 2010 (will be published)
 IEEE Transaction 10 Papers
1. Jianjun Gao‚“An Analytical Method to Determine Small-Signal Model Parameters for Vertical-Cavity Surface Emitting Lasers”IEEE/OSA Journal of Lightwave Technique‚ vol.28‚ no.9‚ pp.1332-1337‚ 2010
2. Jianjun Gao‚ andAndreas Werthof‚ “Scalable Small Signal and Noise Modeling for Deep Submicron MOSFETs” IEEE Trans. Microwave Theory Techniques vol.59‚ no.4‚ pp737-744‚ 2009
3. Jianjun Gao‚ “Microwave Modeling and Parameter Extraction Method for Quantum-Well Lasers‚” IEEE/OSA Journal of Lightwave Technique‚ vol.26‚ no.14‚ pp.2245-2251‚ 2008
4. Jianjun Gao ‚ X.Li‚ “A Semi-analytical Method to Determine Parasitic Elements of Quantum-Well Laser‚” IEEE/OSA Journal of Lightwave Technique ‚ vol.25‚ No.10 pp3078-3081‚ 2007
5. Jianjun Gao ‚ X.Li‚ Hong Wang‚ Georg Boeck‚ “An approach to Determine Small signal model parameters for InP-based Heterojunction Bipolar Transistors‚” IEEE Trans. Semiconductor Manufacturing‚ Vol.19 No.1‚ pp138-145. 2006
6. Jianjun Gao and Georg Boeck “Relationships Between Common Source‚ Common Gate‚ and Common Drain FETs‚” IEEE Trans. Microwave Theory Techniques‚ vol.53‚ no.12 p3825-3831‚ 2005
7. Jianjun Gao ‚ X.Li‚ Hong Wang ‚ Georg Boeck‚ “Direct Extraction Noise Parameters for InP HBT Based on Noise Figure Measurement System‚” IEEE Trans. Microwave Theory Technology Vol.53‚ no.1 p330-335‚ 2005
8. Jianjun Gao‚ X.Li‚ Jens flucke‚ Georg Boeck‚ “Direct Parameter-Extraction method for Laser Diode Rate Equation Model‚” IEEE/OSA Journal of Lightwave Technique ‚ vol.22‚ No.6 pp1604-1609‚ 2004
9. Jianjun Gao‚ X.Li‚ Hong Wang ‚ Georg Boeck‚ “Microwave Noise modeling for InP/InGaAs HBTs‚” IEEE Trans. Microwave Theory Technique‚ Vol.52‚ No.4‚ pp.1264–1272 2004
10. Jianjun Gao‚ C L Law‚ H wang‚ S Aditya‚ Georg Boeck ‚ “A New Method for PHEMT Noise Parameter Determination Based on 50- Noise Measurement System” IEEE Trans. Microwave Theory Techniques Vol.51 No.10‚ pp.2079-2089‚ 2003
IET 3 papers
1. Jianjun Gao and Andreas Werthof‚ “Direct Parameter Extraction method for Deep Submicrometer MOSFET Small Signal Equivalent Circuit‚” IET Proceedings - Microwaves‚ Antennas and Propagation‚ vol.3‚ no.4‚ pp564-571‚ 2009
2. Jianjun Gao ‚ X.Li‚ Hong Wang‚ Georg Boeck “An Improved Analytical Method for Determination of Small Signal Equivalent Circuit Model Parameters for InP/InGaAs HBTs‚” IEE Proceedings - Circuit‚ Device and System vol.152‚ no.6 pp661-666. 2005
3. Jianjun Gao ‚ X.Li‚ Hong Wang‚ Georg Boeck‚ “An Approach for Determination of Extrinsic Resistances for Metamorphic InP/InGaAs HBTs Equivalent Circuit Model.” IEE Proceedings - Microwaves‚ Antennas and Propagation vol.152‚ no.2 pp195-200‚ 2005
International Journal 25 papers
1. Jianjun Gao‚ “High Frequency Modeling for Quantum-well laser diodes” ‚ Chinese Science Bulletin‚ vol.54‚ no.20‚ pp3633-3638‚ 2009
2. X.Li‚ Jianjun Gao and Georg Boeck‚ “Relationships between Common Emitter‚ Common Base and Common Collector HBTs‚” Microwave Journal‚ vol.52‚ no.2‚ pp.66-78‚ 2009
3. X. Li‚ J.Gao‚ Q-J.Zhang “Microwave Noise Modeling for PHEMT Using Artificial Neural Network Technique‚” International Journal of RF and Microwave Computer-Aided Engineering‚ vol.19‚ no.8‚ pp187-196. 2009
4. Qian Wang and Jianjun Gao‚ “An approach for determination of MOSFET small signal model” Microwave Journal‚ vol.51‚ vol.10‚ pp128-136. 2008
5. X. Li and Jianjun Gao ‚ “PAD modeling by using artificial neural network‚” Progress In Electro-magnetics Research‚ PIER 74‚ 167–180‚ 2007
6. X. Li‚ Jianjun Gao and Georg Boeck‚ “Printed Dipole Antenna Design by Artificial Neural Network Modeling for RFID Application‚” International Journal of RF and Microwave Computer-Aided Engineering‚ Vol.16‚ No.6‚ 607-611 2006.
7. X. Li‚ Jianjun Gao “PHEMT modeling by using neural network technique” IOP Semiconductor. Science Technology‚ 21(5):833–840. 2006
8. X.Li‚ Jianjun Gao and Georg Boeck‚ “Microwave Noise Modeling for A1GaAs/InGaAs/GaAs PHEMTs ”‚ Microwave Journal‚ Dec. 94-106‚2006
9. J. Gao‚ X.Li‚ Hong Wang‚ Georg Boeck‚ “A new method for determination of parasitic capacitances for PHEMTs‚” Institute of Physics. Semiconductor Science Technology. 20 pp586–591. 2005
10. Jianjun Gao ‚ “An approach for determining PHEMT small-signal circuit model parameters up to 110GHz‚” International Journal of Infrared and Millimeter Waves vol.16‚ no.7‚ 2005 pp1017-1029
11. X.Li‚ J.Gao‚ Yook JG ”An equivalent circuit parameters extraction technique for bandpass filters‚” International Journal of Electronics 92 (5): 303-311 May 2005
12. X.Li‚ Jianjun Gao‚ Yook Jonggwan and Xu Xiaowen‚ “An Approach for Minimum Insertion Loss Bandpass Filter Design‚” Chinese Journal of Electronics‚ Vol. 2‚ 370-372‚2005
13. Jianjun Gao‚ Baoxin Gao‚ Chunguang Liang‚ “PIN PD Microwave Equivalent Circuit Model for Optical Receiver Design "‚ Microwave and Optical Technology Letters v38‚n2‚102-104‚ 2003
14. Jianjun Gao‚C L Law‚H wang‚ S Aditya “A Submicron PHEMT Nonlinear Model Suitable for Low Current Amplifier Design” Int. Journal of Electronics Vol.90‚ No.7‚ pp.433-443‚ 2003
15. Jianjun Gao‚ Baoxin Gao‚ Chunguang Liang. “Large signal model of quantum-well lasers for spice”‚ Microwave and Optical Technology Letters‚ vol. 39‚ Issue 4‚ Nov‚ pp: 295-298‚ 2003
16. X.P.Li‚ Jianjun Gao‚ C.L.Law‚ A.Sheel‚ Georg Boeck‚ “An Improved On-wafer Measurement Method for PHEMT Modeling or millimeter wave applications‚” International Journal of Infrared and Millimeter Waves Number 10‚ pp1759-1766 2003
17. X.Li‚ Jianjun Gao‚ C.L.Law‚ A.Sheel‚ “An Approach for Microprobe Measurement and Modeling for Millimeter-wave Application‚”‚ International Journal of Infrared and Millimeter Waves Number 10‚ pp1709-1718‚ 2003
18. Jianjun Gao‚ Baoxin Gao‚ Chunguang Liang‚ “An improved HEMT noise model for optical preamplifier design"‚ Microwave and Optical Technology Letters2001(1)‚v27‚n5‚pp26~28
19. Jianjun Gao‚ Baoxin Gao‚ Chunguang Liang‚ “A small-signal equivalent- circuit model of quantum-well lasers based on three-level rate equations"‚ Microwave and optical Technology Letters 2001‚v30‚n4‚ pp270~271.
20. Jianjun Gao‚ Baoxin Gao‚ Chunguang Liang‚ “An Approach to Determining ParasiticElements for Laser Diodes "‚ Microwave and Optical Technology Letters2002‚ v34‚n3‚ pp191~193.
21. Jianjun Gao‚C L Law‚H wang‚ S Aditya. “ An approach for extracting small signal equivalent circuit of double heterojunction δ-doped PHEMTs for millimeter wave applications‚” International Journal of Infrared and Millimeter Waves Volume 23‚ Number 3‚ March‚ pp.345~364. 2002.
22. Jianjun Gao‚ C L Law‚ H Wang ‚ S Aditya “An Approach to Linear Scalable DH-PHEMT Model” International Journal of Infrared and Millimeter WavesVolume 23‚ Number 12‚ Dec. 1787-1801. 2002.
23. Jianjun Gao‚C L Law‚H wang‚ S Aditya “An Improved Pinchoff Equivalent Circuit Model for Determining Small-signal Model Parameters of Double Heterojunction -doped pHEMTs” International Journal of Infrared and Millimeter Waves Volume 23‚ Number 11‚ Nov‚ pp.1611~1626. 2002
24. Jianjun Gao‚ Baoxin Gao‚ Chunguang Liang‚ “Model device parameters for a 10-Gb/s HEMT modulator driver IC” "‚ Microwave and Optical Technology Letters2002‚ v35‚n5‚ pp357~360.
25. Jianjun Gao‚ Baoxin Gao‚ Chunguang Liang‚ “Modeling of MSM PD for SPICE"‚ Microwave and Optical Technology Letters 2000(9)‚ v26‚n6‚ pp390~394.
International Conference 9 papers
1. J.Gao‚ X. Li‚ “Microwave modeling and parameter extraction method for PHEMT‚” Microwave and Millimeter Wave Technology‚ 2008. ICMMT 2008. International Conference on Volume 3‚ 21-24 April 2008 Page(s):1323 – 1326
2. Jianjun Gao‚ X.Li‚ Q-J Zhang‚ “Microwave noise modeling for HEMT” Asia Pacific Microwave Conference 2006 Japan
3. Jianjun Gao‚ Lei Zhang‚ Jianjun Xu‚ Q-J Zhang‚ “Nonlinear HEMT Modeling Using Artificial Neural Network Technique‚” IEEE International Microwave Symposium Digest‚ IMS2005 pp469-472
4. S. Ling‚ Gao Jianjun. A Method for On-Wafer S-Parameter Measurement of a Differential Amplifier by Using Two-Port Network Analyzer. Asia Pacific Microwave Conference 2005.12‚ pp3088-3091
5. X.Li‚ Jianjun Gao‚ C.L.Law‚ A.Sheel‚ “An Approach to Band-pass Filters Design for RFID Application. PIERS 2003‚ Singapore‚ 7-10 Jan‚ 2003‚ 71
6. X.P.Li‚ Jianjun Gao‚ C.L.Law‚ A.Sheel‚ “An Approach for Microprobe Measurement and Modeling for Millimeter-wave Application‚” 2003 IEEE AP-S International Symposium on Antennas and Propagation Columbus‚ Ohio‚ USA on June 22-27‚ 2003
7. X.Li‚ Jianjun Gao‚ Choi Look Law‚ Sheel Aditya‚ Georg Boeck An improved On-wafer Measurement Method for PHEMT Modeling by Using Coaxial Calibration‚” Asia-Pacific Microwave Conference Nov‚ 2003‚ vol.1‚580-583
8. Jianjun Gao‚ X.Li‚ H.Yang‚ H.Wang‚ G.Boeck‚ “An Approach to Determine and for InP HBT Using Cutoff Mode Measurement‚” European Microwave Week‚ GAAS Conference 2003‚ pp145-147
9. Jianjun Gao‚ Xiuping Li‚ Hong Wang‚ George Boeck‚ "An Empirical All Region Current Based PHEMT DC Model” International Microwave and Optoelectronics Conference 2003 pp.99-101 IEE-MTTS/IMOC2003 Brazil
Research FieldsOptoelectronic Integrated Circuit Design RF Device‚ Circuit and System Enrollment and TrainingCourseScientific ResearchAcademic AchievementsBachelor 1991 Tsinghua University (5 years)
Master 1994 HeBei Semiconductor Research Institute
Ph.D 1999 Tsinghua University
Honor |
|
Gaojianjun |