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高建军

校特聘教授

物理与电子科学学院      

个人资料

  • 部门: 物理与电子科学学院
  • 毕业院校: 清华大学
  • 学位: 博士
  • 学历: 博士
  • 邮编:
  • 联系电话:
  • 传真:
  • 电子邮箱: jjgao@ee.ecnu.edu.cn
  • 办公地址: 信息楼213
  • 通讯地址: 上海市东川路500号 200241

教育经历

(1) 1996-3至1999-3, 清华大学, 微波, 博士, 导师: 高葆新

(2) 1991-8至1994-3, 电子部十三所, 微电子, 硕士, 导师: 梁春广

(3) 1986-8至1991-7, 清华大学, 微波, 学士


工作经历

(1) 2007-7至现在, 华东师范大学, 物理与电子科学学院, 教授

(2) 2004-12至2007-6, 东南大学, 信息学院, 教授

(3) 1994-3至1999-4, 电子部十三所, 第十研究室, 工程师

(4) 2003-12至2004-12, 加拿大卡尔顿大学, 博士后研究员

(5) 2002-10至2003-11, 德国柏林工业大学, 博士后研究员

(6) 2001-6至2002-10, 新加坡南洋理工大学, 博士后研究员

(7) 1999-5至2001-5, 中科院微电子所, 博士后


个人简介

高建军,男,1968 年出生。1991 年7 月清华大学电子系(5 年制)本科毕业,获得电磁场与微波技术专业工学学士学位。1994 年2 月获得电子工业部第十三研究所微电子学硕士学位。1999 年3 月获得清华大学电子系电磁场与微波技术专业工学博士学位。博士毕业后进入中国科学院微电子研究所做博士后(知识创新工作人员),2001 年出站后获得副研究员任职资格。2001 年至2004 年,分别在新加坡南洋理工大学电子电气工程学院、德国柏林工业大学高频技术(HFT)研究所工作加拿大Carleton 大学电子系工作。自2004 年-2007 年,担任东南大学无线电工程系教授、博导。2007 年7 月起为华东师范大学信息学院“紫江学者”特聘教授。2005 年入选教育部“新世纪优秀人才”支持计划。中国电子学会高级会员,IEEE 高级会员,多个国际期刊的编委和审稿人。先后在清华大学、电子部、中科院、新加坡、德国和加拿大等知名大学及研究所对用于超高速光纤通信和RF 微波毫米波通信系统的光电子器件(半导体激光器和探测器)、III-V 族化合物半导体器件(高电子迁移率晶体管PHEMT,异质结双极晶体管HBT)高频建模、微波测试和超高速光电集成电路设计等领域进行了系统的研究。



社会兼职

中国电子学会高级会员‚IEEE高级会员(Senior Member IEEE)‚中国科学院微电子研究所客座研究员。
是下列重要国际国内学术刊物的审稿人:
IEEE Transaction on Microwave Theory and Techniques
IEEE Microwave Wireless Component Letters
IET Microwave Antenna and Propagation
IEEE Journal of Quantum Electronics
<<电子学报>>   (英文版) 
<<科学通报>>  (英文版)
<<半导体学报>> (英文版)

研究方向

微波有源无源器件建模技术
光电子器件建模技术
微波射频测试技术

开授课程

科研项目

(1) 国家自然科学基金重点项目,62034003,III-V族化合物半导体器件太赫兹建模和电路验证,2021-2025

(2) 国家自然科学基金面上项目,61774058,基于67-110GHz毫米波测试的HBT器件建模和低功耗电路设计,2018至2021

(3) 国家自然科学基金面上项目,61474044,40纳米工艺MOSFET器件毫米波建模和低功耗电路设计,2015至2018

(4) 国家自然科学基金面上项目,611761036,高电子迁移率晶体管毫米波建模和可靠性研究,2011至2014

(5) 教育部,人才计划项目,新世纪优秀人才支持计划,NCET-05-0464, 2005至2008

学术成果

英文专著3

1. Jianjun Gao, Heterojunction Bipolar Transistor for Circuit DesignMicrowave modeling and parameter extractionWiley 2015

2.Jianjun Gao, Optoelectronic Integrated Circuit Design and Device ModelingWiley 2010

3. Jianjun Gao, RF and Microwave Modeling and Measurement Techniques for Field Effect TransistorUSA SciTech Publisher, 2009


中文专著3 

1. 高建军异质结双极晶体管――射频微波建模和参数提取方法高等教育出版社 2013

2. 高建军《高速光电子器件建模和集成电路设计》高等教育出版社 2009

3. 高建军《场效应晶体管射频微波建模技术》(国家十一五重点图书)电子工业出版社 2007


编著一部

1. 李秀萍,高建军编著《微波射频测量技术基础》机械工业出版社, 2007


译著5部

1. 李秀萍,高建军译,《射频与微波工程实践导论》电子工业出版社,2009

2. 高建军,刘新宇《半导体器件计算和电信中的应用》机械工业出版社 2010

3. 孙玲,程加力,高建军译,《射频功率放大器》清华大学出版社,2016

4.  闫娜,程加力,陈波,高建军译,《无线收发器设计指南:现代无线设备与系统篇》清华大学出版社,2019

5. 张傲,陈栋,王太磊,高建军译,《室内无线通信:从原理到实现》清华大学出版社,2019



SCI论文 (一作IEEE Trans 长文11篇)

1. A.Zhang, J.Gao,“A Direct Extraction Method to Determine the Extrinsic Resistances for InP HBT device based on S-parameters measurement up to 110GHz,”Semiconductor Science and Technology, 2020, vol.35,075025

2. A.Zhang, J.Gao, H.Wang, “Direct parameter extraction method for InP heterojunction bipolar transistors based on the combination of T- and π-models up to 110 GHz,”Semicond. Sci. Technol. 35 (2020) 025001

3. A.Zhang, J.Gao, “An approach to determine cutoff frequency and maximum oscillation frequency of common emitter heterojunction bipolar transistor,” International Journal of Numerical Modeling: Electronic Networks, Devices and Fields, vol.33, no.3, e2545, 2020

4. B.Wang, A.Zhang, Y.Zhang, J.Gao, “An approach for determining thermal resistance model parameters of SiGe HBT,”International Journal of Numerical Modeling: Electronic Networks, Devices and Fields, vol.33, no.3, e2616, 2020

5. L. Shi, Y. Yuan, J. Gao, et al. Compact Fractional-Order Model of On-Chip Inductors with BCB on High Resistivity Silicon. IEEE Transactions on Components, Packaging and Manufacturing Technology,2020, 10(5):878-886.

6.L. Shi,T. Li, Y. Chen,et al. Millimeter-Wave Slow-wave Si-Benzocyclobutene Transmission Line: Modeling and a Coupler Application [J]. Microwave and Optical Technology Letters, 2020, 62(3):1188-1194.

7. L. Shi, L. Qiu, X. Huang, et al.Characterization of Si‐BCB Transmission Line at Millimeter‐Wave Frequency by Compact Fractional‐Order Equivalent Circuit Model. International Journal of RF and Microwave Computer-aided Engineering, 2019, 29(6):e21685.

8. A.Zhang, J.Gao, H.Wang, “An empirical noise model for III-V compound semiconductor based HBT,” Solid-State Electronics,163 (2020):107679.

9. A.Zhang and J.Gao, “Emitter-Length Scalable Small Signal and Noise Modeling for InP Heterojunction Bipolar Transistors,” IEEE Access, vol.7, pp:13939-13944, 2019

10.  A.Zhang and J.Gao, “An Approach to Determine Small-Signal Model Parameters for InP HBT up to 110GHz,” Journal of infrared millimeter waves, vol.37, no.6, pp698-702, 2018

11. A.Zhang and J.Gao, “A new method for determination of PAD capacitances for GaAs HBTs based on scalable small signal equivalent circuit model”, Solid-State Electronics,150(2018):45-50.

12. Y.Zhang, A.Zhang, B.Wang, J.Gao, “Radio-Frequency Modeling and Parameter Extraction of Graphene On-Chip Spiral Inductors,” J.Infrared Millim.Waves, 2018, 37(4):393~398

13. P.Yu, L.Sun,X.Tian, J.Cheng, J.Gao (*), “A gate-width scalable 90-nm MOSFET nonlinear model including DC/RF dispersion effects valid up to 50 GHz,” Solid-State Electronics 135 (2017): 53-64

14. Qian Qian Meng, Hong Wang, Chong Yang Liu,Jianjun Gao, High-Speed and High-Responsivity InP-Based Uni-Traveling-Carrier Photodiodes. IEEE Journal of the Electron Devices Society 2017,5(1):40-44

15. B.Chen, L.Lou, K.Tang, Y.Wang, J.Gao, “A 13.5–19 GHz 20.6-dB Gain CMOS Power Amplifier for FMCW Radar Application,” IEEE Microwave and Wireless Components Letters, 2017, 27(4)377-379

16. Z.Xu and J.Gao, “Semi-analytical small signal parameter extraction method for PIN photodiode” IET Optoelectroincs 2017, vol. 11 no. 3, pp. 103-107

17. Y. Zhou, P. Yu, N. Yan, J. Gao. An improved de-embedding procedure for nanometer MOSFET small signal modeling, Microelectronics Journal.  Vol.57, No.11, pg:60-65, 2016.

18. P.Yu, J.Gao, “A novel approach to extracting extrinsic resistances for equivalent circuit model of nanoscale MOSFET”, International Journal of Numerical Modeling: Electronic Networks, Devices and Fields, vol.29, no.6, pp1044-1054, 2016

19.Qian Qian Meng, Hong Wang, Chong Yang Liu,Jianjun Gao, “Characterization of high-photocurrent and high-speed INP-based uni-traveling-carrier photodiodes at 1.55-μm wavelengthMicrowave and Optical Technology Letters, vol. 58, no.9, pp2156-2162, 2016

20.R.Chen, B.Chen, D.Luo and J.Gao, “Direct extraction method of equivalent circuit parameters for stacked transformer,” Journal of infrared millimeter waves, vol.35, no.2, pp172-176, 2016

21.周影,盼盼,高建军。多胞MOSFET器件的射频建模和参数提取,红外与毫米波学报。2017,36(5):550-554

22. P.Yu, J.Gao, “Microwave noise modeling for MOSFETs,” International Journal of Numerical Modeling: Electronic Networks, Devices and Fields, vol.28, no.6, pp639-648, 2015

23. Li Shen B.Chen, L.Sun, Jian Gao, Device Modeling of High Electron Mobility Transistors: Small Signal and Noise Modeling. Journal of Computational and Theoretical Nanoscience, Volume 12, Number 10, pp. 3547-3555, 2015

24. Li Shen, Bo Chen, Ling Sun, and Jianjun Gao, “The effect of the gate-drain distance on high frequency and noise performance for AlGaN/GaN HEMT,” Microwave and Optical Technology Letters, vol. 57, no.9, pp2020-2023, 2015

25.Li Shen, Bo Chen, Ling Sun,Danting Luo, and Jianjun Gao, “An improved DC model for AlGaN/GaN HEMTs,” Microwave and Optical Technology Letters, vol. 57, no. 5, pp1027-1029, 2015

26.B.Chen, G.Su; L.Shen; J.Gao, “A 60 GHz Low Power Direct-Conversion Quadrature-phase Transmitter in 130nm CMOS with Low Profile Cavity Backed Antenna,” Microwave & Optical Technology Letters, 2015,57(4)785~789

27.Bo Chen; Li Shen; Jianjun Gao, A 60 GHz transformer-coupled neutralized low power CMOS power amplifier, Microwave & Optical Technology Letters, 2015, 57(11)2487~2491

28.Sun, Ling; Gao, Jianjun; Shen, Li, “Direct Extraction of Equivalent Circuit Parameters for GaAs pHEMT.Journal of Computational and Theoretical Nanoscience, vol. 12, no.6, April 2015, pp. 996-1001

29.Jianfei Xu, Na Yan, Xiaoyang Zeng, Jianjun Gao, A 3.4 dB NF k-band LNA with a tapped capacitor matching network in 65 nm CMOS technologyInternational Journal of RF and Microwave Computer-Aided Engineering,, 2015, Vol.25, No.2, pp.146-153

30. G.Zhai, Y.Cheng, Q.Yin, S.Zhu, J.Gao, Gain Enhancement of Printed Log-Periodic Dipole Array Antenna Using Director Cell. IEEE Trans. Antennas and Propagation, vol.62, no.11, pp 5915-5919, 2014

30.Qian Qian Meng, Hong Wang, Chong Yang Liu, Kian Siong Ang, Xin Guo, Bo Gao, Yang Tian, C. M. Manoj Kumar, and Jianjun Gao, “High-Photocurrent and Wide-Bandwidth UTC Photodiodes With Dipole-Doped Structure”, IEEE Photonics Technology Letters, vol. 26, no. 19, 2014 1pp:1952-1955

31.Bo Chen, Li Shen, Supeng Liu, Yuanjin Zheng, Jianjun Gao. A broadband, high isolation millimeter-wave CMOS power amplifier using a transformer and transmission line matching topology. Analog Integrated Circuits and Signal Processing. Volume 81, Issue 2, pp 537-547. November 2014

32. L.Shen, B.Chen, J.Gao, “An Improved Millimeter-Wave Small-Signal ModelingApproach for HEMTs,” International Journal of RF and Microwave Computer-Aided Engineering, Vol. 24, No. 4, pp464-469, 2014

33. Q.Yin, J.Gao, “Direct Extraction Method for Stripline Packaged Field Effect Transistor Small Signal Equivalent Circuit Model,” International Journal of RF and Microwave Computer-Aided Engineering, Vol. 24, No. 3, pp 306-313, 2014

34. L.Sun, J.Gao, A.Werthof, “Effect of Guard-Ring on the DC and High-Frequency Performance of Deep-Submicrometer Metal Oxide Semiconductor Field Effect Transistor,” International Journal of RF and Microwave Computer-Aided Engineering, Vol. 24, No.2, pp 259-267, 2014

35. C.Fan and J.Gao, “A semi-analytical small signal parameter extraction method for millimeter HEMT,” Journal of infrared millimeter waves, vol.33, no.1, pp69-74, 2014

36.G.Zhai, Y.Cheng, Q.Yin, S.Zhu, J.Gao, Simplified Printed Log-Periodic Dipole Array Antenna Fed by CBCPW, International Journal of Antennas and Propagation Volume 2013 (2013), Article ID 548610, 5 pages

37. G.Zhai, Y.Cheng, Q.Yin, S.Zhu, J.Gao, Uniplanar Millimeter-Wave Log-Periodic Dipole Array Antenna Fed by Coplanar Waveguide, International Journal of Antennas and Propagation Volume 2013 (2013), Article ID 430618, 5 pages

38. Li Shen, Bo Chen, Caiyun Fan, and Jianjun Gao, “A new method to determine parasitic capacitances for HEMTs,” Microwave and Optical Technology Letters, vol.55, no.12, pp 3005-3007, 2013

39.Jianjun Gao, Chen Yang, “Microwave modeling and parameter extraction method for multilayer on-chip inductors,” International Journal of RF and Microwave Computer-Aided Engineering, vol.23, no.3, pp 343-348, 2013

40. Na Yan, Chen Yang, Jianjun Gao, “ An Approach for Determining Equivalent Circuit Model of On-Chip Inductors ,” Microwave and Optical Technology Letters, vol.55, no.10, pp 2363-2370, 2013

41. Zao Ni, Jing Zhan, Qiang Fang, Xin Wang, Zitao Shi, Yi Yang, Tian-Ling Ren, Albert Wang, Yuhua Cheng, Jianjun Gao, Xinxin Li, Chen Yang, “Design and Analysis of Vertical Nanoparticles-Magnetic-Cored Inductors for RF ICs,” IEEE Trans. Electron Devices, vol.60, no. 4, pp 1427-1435, 2013

42.Guohua Zhai; Yong Cheng, Qiuyan Yin, Leung Chiu, Shouzheng Zhu, Jianjun Gao, “Super High Gain Substrate Integrated Clamped-Mode Printed Log-Periodic Dipole Array Antenna,” IEEE Trans. Antennas and Propagation, vol.61, no.6, pp 3009-3016, 2013

43.Jianjun Gao “High frequency modeling and parameter extraction for vertical-cavity surface emitting lasers,”  Journal of Lightwave Technology, vol. 30, no.11, pp. 1757-1763, 2012

44.J.Cheng, B.Han, S.Li, G.Zhai, L.Sun, J.Gao, “An improved and simple parameter extraction method and scaling model for RF MOSFETs up to 40 GHz,” International Journal of Electronics, vol.99, no.5, pages 707-718 2012

45. H.Wang, L.Sun, J.Liu, Z.Yu, J.Gao, “Analysis of modeling approaches for on-chip spiral inductors,” International Journal of RF and Microwave Computer-Aided Engineering, vol.22, no.3, pp377-386, 2012

46. S.li, J.Cheng, B.Han, J.Gao, Bias-Dependent Small-Signal Modeling based on Neuro-Space Mapping for MOSFET, International Journal of RF and Microwave Computer Aided Engineering, 2011, 21(2):182-189.

47.J.Gao, “Direct parameter-extraction method for MOSFET noise model from microwave noise figure measurement,” Solid-State Electronics, vol.63, no.1, pp.42–48, 2011

48. H.Wang, L.Sun, J.Liu, H.Zou, Z.Yu., and J.Gao, “Transfer Function Analysis and Broadband Scalable Model for On-Chip Spiral Inductors” IEEE Trans. Microwave Theory Technology, vol.59, no. 7, pp1696-1708 2011

49.S.li, X.Li, J.Gao, “Neural-Space Mapping-Based Large-Signal Modeling for MOSFET,” International Journal of RF and Microwave Computer-Aided Engineering, vol. 21, no.3 pp.353-362, 2011

50.J.Gao‚ “Fast Calculation of transimpedance gain and equivalent input noise current density for high-speed optical preamplifier design,” Microwave Journal, Vol.55, No.5, pp188-204, 2011

51. Jianjun Gao‚ “An Analytical Method to Determine Small-Signal Model Parameters for Vertical-Cavity Surface Emitting Lasers” IEEE/OSA Journal of Lightwave Technique‚ vol.28‚ no.9‚ pp.1332-1337‚ 2010

52.S. Li, B. Han, J. Cheng, J. Gao, “Neuro-Space Mapping-Based DC Modeling for 130-nm MOSFET,” International Journal of RF and Microwave Computer-Aided Engineering, vol.20, 587–592, 2010

53.J.Cheng, J.Gao, “Analysis and Modeling of the Pads for RF CMOS Based on EM Simulation,  Microwave Journal, vol.53, No.10, pp. 96-108, 2010.

54.J.Gao,“High Frequency Modeling for Quantum-well laser diodes” , Chinese Science Bulletin, vol.54, no.20, pp3633-3638, 2009

55.J. Gao, andAndreas Werthof, “Scalable Small Signal and Noise Modeling for Deep Submicron MOSFETs” IEEE Trans. Microwave Theory Techniques, vol.57no.4 , pp737-744, 2009

56.Jianjun Gao and Andreas Werthof, “Direct Parameter Extraction method for Deep Submicrometer MOSFET Small Signal Equivalent Circuit,” IET Proceedings - Microwaves, Antennas and Propagation, vol.3, no.4, pp564-571, 2009

57.Xiuping Li, Jianjun  Gao and Georg Boeck, “Relationships between Common Emitter, Common Base and Common Collector HBTs,” Microwave Journal, vol.52, no.2, pp.66-78, 2009

58. X. Li, J.Gao, Q-J.Zhang “Microwave Noise Modeling for PHEMT Using Artificial Neural Network Technique,” International Journal of RF and Microwave Computer-Aided Engineering, vol.19,  no.8, pp187-196. 2009

59. Qian Wang and J.Gao, “An approach for determination of MOSFET small signal model” Microwave Journal, vol.51, vol.10, pp128-136. 2008 

60.Jianjun Gao, “Microwave Modeling and Parameter Extraction Method for Quantum-Well Lasers,”  IEEE/OSA Journal of Lightwave Technique, vol.26, no.14, pp.2245-2251, 2008

61.Jianjun Gao, Xiuping Li, “A Semi-analytical Method to Determine Parasitic Elements of Quantum-Well Laser,” IEEE/OSA  Journal of Lightwave Technique , vol.25, No.10  pp3078-3081, 2007

62. Xiuping Li and Jianjun  Gao , “PAD modeling by using artificial neural network,” Progress In Electro-magnetics Research, PIER 74, 167–180, 2007

63. Xiuping Li, Jianjun  Gao and Georg Boeck, “Printed Dipole Antenna Design by Artificial Neural Network Modeling for RFID Application,” International Journal of RF and Microwave Computer-Aided Engineering, Vol.16, No.6, 607-611 2006.

64. Xiuping Li,Jianjun Gao“PHEMT modeling by using neural network technique”  IOP  Semiconductor. Science Technology, 21(5):833–840. 2006

65.Xiuping Li, Jianjun  Gao and Georg Boeck, “Microwave Noise Modeling for A1GaAs/InGaAs/GaAs PHEMTs”, Microwave Journal, vol.49, no.12. 94-1062006

66.Jianjun Gao , Xiuping Li, Hong  Wang, Georg Boeck, “An approach to Determine Small signal model parameters for InP-based Heterojunction Bipolar Transistors,” IEEE Trans. Semiconductor Manufacturing, vol.19 No.1, pp138-145. 2006

67.Jianjun Gao , “An approach for determining PHEMT small-signal circuit model parameters up to 110GHz,” International Journal of Infrared and Millimeter Waves  vol.16, no.7, 2005  pp1017-1029

68. X.Li,J.Gao, Yook JG ”An equivalent circuit parameters extraction technique for bandpass filters,” International Journal of Electronics 92 (5): 303-311 May 2005

69.Xiuping Li, Jianjun  Gao, Yook Jonggwan and Xu Xiaowen, “An Approach for Minimum Insertion Loss Bandpass Filter Design,” Chinese Journal of Electronics, Vol. 2, 370-3722005

70.Jianjun Gao , Xiuping Li, Hong  Wang, Georg Boeck “An Improved Analytical Method for Determination of Small Signal Equivalent Circuit Model Parameters for InP/InGaAs HBTs,”IEE Proceedings - Circuit,  Device and System  vol.152, no.6 pp661-666. 2005

71.Jianjun Gao , Xiuping Li, Hong  Wang, Georg Boeck, “An Approach for Determination of Extrinsic Resistances for Metamorphic InP/InGaAs HBTs Equivalent Circuit Model.”  IEE Proceedings - Microwaves,  Antennas and Propagation  vol.152, no.2 pp195-200, 2005 

72.Jianjun Gao, Xiuping Li, Hong  Wang, Georg Boeck, “A new method for determination of parasitic capacitances for PHEMTs,” Institute of Physics.  Semiconductor Science Technology. 20  586–591. 2005

73.Jianjun Gao and Georg Boeck “Relationships Between Common Source, Common Gate, and Common Drain FETs,” IEEE Trans. Microwave Theory Techniques, Vol.53, no.12 p3825-3831, 2005

74.Jianjun Gao , Xiuping Li, Hong  Wang  , Georg Boeck, “Direct Extraction Noise Parameters for InP HBT Based on Noise Figure Measure ment System,” IEEE Trans. Microwave Theory Technology  Vol.53, no.1 p330-335, 2005

75.Jianjun Gao, Xiuping Li, Jens flucke, Georg Boeck, “Direct Parameter-Extraction method for Laser Diode Rate Equation Model,”  IEEE/OSA  Journal of Lightwave Technique , vol.22, No.6  pp1604-1609, 2004

76.Jianjun Gao, Xiuping Li, Hong  Wang  , Georg Boeck, “Microwave Noise modeling for InP/InGaAs HBTs,” IEEE Trans. Microwave Theory Technique, Vol.52, No.4, pp.1264–1272  2004

77.Jianjun  Gao, C L Law, H wang, S Aditya, Georg Boeck , “A New Method for PHEMT Noise Parameter Determination Based on 50- Noise Measurement System” IEEE Trans. Microwave Theory Techniques  Vol.51 No.10, pp.2079-2089, 2003

78.Jianjun Gao, Baoxin Gao, Chunguang Liang, “PIN PD Microwave Equivalent Circuit Model for Optical Receiver Design , Microwave and Optical Technology  Letters v38,n2,102-104, 2003

79.Jianjun Gao,C L Law,H wang, S Aditya “A Submicron PHEMT Nonlinear Model Suitable for Low Current Amplifier Design” Int. Journal of Electronics Vol.90, No.7, pp.433-443, 2003

80.Jianjun Gao, Baoxin Gao, Chunguang Liang. “Large signal model of quantum-well lasers for spice”,  Microwave and Optical Technology Letters, vol. 39, Issue 4, Nov,  pp: 295-298, 2003

81. X.P.Li, Jianjun Gao, C.L.Law, A.Sheel, Georg Boeck, “An Improved On-wafer Measurement Method for PHEMT Modeling or millimeter wave applications,” International Journal of Infrared and Millimeter Waves  Number 10, pp1759-1766 2003

82.Xiuping.Li, Jianjun Gao, C.L.Law, A.Sheel, “An Approach for Microprobe Measurement and Modeling for Millimeter-wave Application,”,International Journal of Infrared and Millimeter Waves  Number 10, pp1709-1718, 2003

83.Jianjun Gao, Baoxin Gao, Chunguang Liang, “An improved HEMT noise model for optical preamplifier design, Microwave and Optical Technology Letters2001(1),v27,n5,pp26-28.

84.Jianjun Gao, Baoxin Gao, Chunguang Liang, “A small-signal equivalent- circuit model of quantum-well lasers based on three-level rate equations, Microwave and optical Technology Letters 2001,v30,n4, pp270-271.

85.Jianjun Gao, Baoxin Gao, Chunguang Liang, “An Approach to Determining ParasiticElements for Laser Diodes , Microwave and Optical Technology  Letters2002, v34,n3, pp191~193.

86.Jianjun Gao,C L Law,H wang, S Aditya. “ An approach for extracting small signal equivalent circuit of double heterojunction δ-doped PHEMTs for millimeter wave applications,” International Journal of Infrared and Millimeter Waves Volume 23, Number 3, March, pp.345~364. 2002.

87.Jianjun Gao, C L Law, H Wang , S Aditya “An Approach to Linear Scalable DH-PHEMT Model” International Journal of Infrared and Millimeter WavesVolume 23, Number 12, Dec. 1787-1801. 2002.

88.JianjunGao,C L Law,H wang, S Aditya  “An Improved Pinchoff Equivalent Circuit Model for Determining Small-signal Model Parameters of Double Heterojunction deta-doped pHEMTs” International Journal of Infrared and Millimeter Waves  Volume 23, Number 11, Nov, pp.1611~1626. 2002  

89.Jianjun Gao, Baoxin Gao, Chunguang Liang, “Model device parameters for a 10-Gb/s HEMT modulator driver IC” , Microwave and Optical Technology  Letters2002, v35,n5, pp357~360.

90.Jianjun Gao, Baoxin Gao, Chunguang Liang, “Modeling of MSM PD for SPICE, Microwave and Optical Technology Letters 2000(9), v26,n6, pp390-394.

 





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