导航

  • 个人资料
  • 个人概况
  • 研究方向
  • 招生与培养
  • 开授课程
  • 科研项目
  • 学术成果
  • 荣誉及奖励
头像

曲益明

相关教师

个人资料

  • 部门： 通信与电子工程学院
  • 性别： 女
  • 专业技术职务： 专任副研究员
  • 毕业院校： 浙江大学
  • 学位： 工学博士
  • 学历： 博士研究生
  • 联系电话：
  • 电子邮箱： ymqu@ic.ecnu.edu.cn
  • 办公地址： 华东师范大学(闵行) 实验A楼
  • 通讯地址： 上海市闵行区东川路500号
  • 邮编： 200241
  • 传真：

教育经历

2015-2021 浙江大学，信息与电子工程学院，电子科学与技术，工学博士

2019-2020 （美国）普渡大学，电子与计算机工程学院，微纳电子器件与物理，联合培养博士

2010-2014 杭州电子科技大学，电子信息学院，电子信息工程，工学学士

工作经历

2021.10-至今 华东师范大学通信与电子工程学院，专任副研究员

2021.07-2021.10 浙江大学，集成电路先导技术研究所，助理研究员

2019.08-2020.08 （美国）普渡大学电子与计算机工程学院/Birck纳米科技中心，访问学者



个人简介

曲益明，现任华东师范大学专任副研究员。她2014年本科毕业于杭州电子科技大学电子信息学院，2021年博士毕业于浙江大学信息与电子工程学院，2019-2020年于美国普渡大学电子计算机工程系进行博士联合培养；Birck纳米技术中心访问学者。长期从事半导体器件物理与可靠性研究，多次深度参与国家科技重大专项的子课题，并在国际知名半导企业合作中负责超高速的器件电性表征和可靠性分析。在包括IEEE Transactions on Electron Devices 和Electron Device Letter 等业内顶级期刊在内的学术杂志，以及包括IEDM、VLSI、IRPS等半导体器件领域顶级会议和可靠性物理旗舰会议上发表论文及大会报告共三十余篇（第一及通讯作者9 篇），获得9项已授权的发明创新专利。

社会兼职

2022, 2023 IEEE IRPS Technical Program Committee Member 

2022 IEEE IRPS Reliability Testing 分会主席 

IEEE 会员，IEEE Electron Device Society 会员

IEEE Young Professionals 会员

中国电子学会会员



研究方向

招生与培养

开授课程

科研项目

学术成果

会议论文：

1.     Y. Qu, C. Yan, X. Yu, Y. Ding, and Y Zhao, “GHz Cycle-to-cycle Variation in Ultra-scaled FinFETs: From The Time-zero To the Aging States,” IEEE International Reliability Physics Symposium (IRPS), pp. 10A.1.1–10A.1.6, 2023.

2.     Y. Ding, X. Yu, C. Yan, Z. Weng, Y. Qu, and Y. Zhao, “Interval Time Dependent Wake-up Effect of HfZrO Ferroelectric Capacitor,” IEEE International Reliability Physics Symposium (IRPS), pp. p6EM.1–p6EM.4, 2023.

3.     X. Yu, C. Yan, Y. Ding, Y. Qu, and Y Zhao, “GHz AC to DC TDDB Modeling With Defect Accumulation Efficiency Model,” IEEE International Reliability Physics Symposium (IRPS), pp. 4C.3.1–4C.3.6, 2023.

4.     Y. Qu, C. Yan, Y. Ding, X. Yu, and Y. Zhao, “Sub-ns Scale Mechanism Understanding on Self-heating and Hot Carrier Degradation in Scaled FinFETs,” IEEE International Conference on Solid-State & Integrated Circuit Technology (ICSICT), pp. 1–2, 2022.

5.     C. Yan, Y. Ding, Y. Qu, L. Zhao, and Y. Zhao, “Universal Hot Carrier Degradation Model under DC and AC Stresses,” IEEE International Reliability Physics Symposium (IRPS), pp. 7A.1.1–7A.1.6, 2022.

6.     Y. Qu, Y. Shen, M. Su, J. Lu, and Y. Zhao, “GHz C-V Characterization Methodology and Its Application for Understanding  Polarization Behaviors in High-k Dielectric Films,” IEEE International Reliability Physics Symposium (IRPS), pp. 3A.3.1–3A.3.6, 2022.

7.     Y. Ding, W. Liu, Y. Qu, L. Zhao, and Y. Zhao, “Degradation Behaviors of 22 nm FDSOI CMOS Inverter Under Gigahertz AC Stress,” IEEE International Reliability Physics Symposium (IRPS), pp. p50.1–p50.5, 2022.

8.     J. Li, M. Si, Y. Qu, X. Lyu, P.D. Ye “Multi-Probe Characterization of Ferroelectric/Dielectric Interface by C-V, P-V and Conductance Methods,” IEEE Symposium on VLSI Technology, pp. TF.2.6–2.7, 2022.

9.     Y. Qu, J. Lu, J. Li, Z. Chen, J. Zhang, C. Li, S. Lee, and Y. Zhao, “In-Situ Monitoring of Self-Heating Effect in Aggressively Scaled FinFETs and Its Quantitative Impact on Hot Carrier Degradation Under Dynamic Circuit Operation,” IEEE International Reliability Physics Symposium (IRPS), pp. 5C.1.1–5C.1.5, 2020. (Best Paper Award).

10.   S. Gao, B. Chen, Y. Qu, and Y. Zhao, “MRAM Acceleration Core for Vector Matrix Multiplication and XNOR-Binarized Neural Network Inference,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), pp. 153–154, 2020.

11.   S. Gao, B. Chen, N. Xu, Y. Qu, and Y. Zhao, “Probing Write Error Rate and Random Telegraph Noise of MgO Based Magnetic Tunnel Junction Using a High Throughput Characterization System,” IEEE International Reliability Physics Symposium (IRPS), pp. 1–5, 2019.

12.   Y. Qu, R. Cheng, W. Liu, J. Li, B. Nguyen, O. Faynot, N. Xu, B. Chen, and Y. Zhao, “Effect of Measurement Speed (μs-800 ps) on the Characterization of Reliability Behaviors for FDSOI nMOSFETs,” IEEE International Reliability Physics Symposium (IRPS), pp. 6E.6.1–6E.6.6, 2018.

13.   Y. Zhao, and Y. Qu, “Will Self-heating be Seriously Problematic in Sub-10nm Technology Nodes?” IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), pp. 1–3, 2018.

14.   Y. Qu, X. Lin, J. Li, R. Cheng, X. Yu, Z. Zheng, J. Lu, B. Chen, and Y. Zhao, “Ultra fast (<1 ns) Electrical Characterization of Self-Heating Effect and Its Impact on Hot Carrier Injection in 14nm FinFETs,” IEEE International Electron Device Meeting (IEDM), pp. 864–867, 2017.

15.   X. Yu, B. Chen, R. Cheng, Y. Qu, J. Han, R. Zhang, and Y. Zhao, “Fast-Trap Characterization in Ge CMOS Using Sub-1ns Ultra-Fast Measurement System,” IEEE International Electron Device Meeting (IEDM), pp. 774–777, 2016.


期刊论文：

1.    X. Ding, N. Wei, Y. Qu, Z. Lan, X. Yu, C. Yan, Z. Weng, S. Gao, T. Nishimura, L. Zhao, C.H. Lee, and Y. Zhao, “Fermi Level Pinning Engineering for Achieving High Performance Ge-based Resistive Memory with Ultra-High Self-Rectifying Ratio (>105),” IEEE Transactions on Electron Devices, vol. 69, no. 12, pp. 865–869, 2022.

2.     Y.  Ding, C. Yan, Y. Qu*, and Y. Zhao*, “Re-Examination of Hot Carrier Degradation Mechanism in Ultra-scaled nFinFETs,” IEEE Electron Device Letter, vol. 43, no. 11, pp. 1802–1805, 2022.

3.  Z. Weng, Y. Qu, Z. Lan, J. Liu, M. Su, J. Li, Y. Ding, C.H. Lee, L. Zhao, and Y. Zhao, “Wake-Up Free La-Doped HfO2-ZrO2 Ferroelectrics Achieved With an Atomic Layer-Specific Doping Technique,” IEEE Electron Device Letters, vol. 43, no. 10, pp. 1665–1668, 2022.

4.     X. Wang, Y. Qu, F. Yang, L. Zhao, C.H. Lee, and Y. Zhao, “A Highly Compact Nonvolatile Ternary Content Addressable Memory (TCAM) With Ultralow Power, and 200-ps Search Operation,” IEEE Transactions on Electron Devices, vol. 69, no. 8, pp. 4259–4264, 2022.

5.      J. Noh, H. Bae, J. Li, Y. Luo, Y. Qu, T.J. Park, M. Si, X. Chen, A.R. Charnas, W. Chung, X. Peng, S. Ramanathan, S. Yu, and P.D. Ye, “First Experimental Demonstration of Robust HZO/β-Ga2O3 Ferroelectric Field-Effect Transistors as Synaptic Devices for Artificial Intelligence Applications in a High-Temperature Environment,” IEEE Transactions on Electron Devices, vol. 68, no. 5, pp. 2515–2521, 2021.

6.   J. Li, M. Si, Y. Qu, X. Lyu, and P.D. Ye, “Quantitative Characterization of Ferroelectric/Dielectric Interface Traps by Pulse Measurements,” IEEE Transactions on Electron Devices, vol. 68, no. 3, pp. 1214–1220, 2021.

7.     R. Cheng, Y. Sun, Y. Qu, W. Liu, F. Liu, J. Gao, N. Xu, and B. Chen, “Nano-Scaled Transistor Reliability Characterization At Nano-Second Regime,” Science China: Information Sciences, vol. 64, pp. 209401:1–209401:3, 2021.

8.     Y. Qu, J. Li, M. Si, X. Lyu, and P.D. Ye, “Quantitative Characterization of Interface Traps in Ferroelectric/Dielectric Stack Using Conductance Method,” IEEE Transactions on Electron Devices, vol. 67, no. 12, pp. 5315–5321, 2020.

9.     X. Yu, J. Lu, W. Liu, Y. Qu, and Y. Zhao, “Ultra-Fast (ns-scale) Characterization of NBTI Behaviors in Si pFinFETs,” IEEE Journal of the Electron Devices Society, vol. 8, pp. 573–577, 2020.

10.   B. Chen, S. Gao,Y. Qu, N. Xu,and Y. Zhao, “An Euler-Lagrange Equation Oriented Solution for Write Energy Minimization of STT-MRAM,” IEEE Transaction on Electron Devices,vol. 66, no. 8, pp. 3686–3689, 2019.

11.    J. Li, Z. Chen, Y. Qu, and R. Zhang, “Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices,” IEEE Journal of the Electron Devices Society, vol. 8, pp. 350–357, 2019.

12.    Y. Zhao, and Y. Qu, “Impact of Self-Heating Effect on Transistor Characterization and Reliability Issues in Sub-10 nm Technology Nodes,” IEEE Journal of the Electron Devices Society, vol. 7, pp. 829–836, 2019.

13.    X. Yu, R. Cheng, W. Liu, Y. Qu, B. Chen, J. Lu, and Y. Zhao, “A Fast Vth Measurement (FVM) Technique for NBTI Behavior Characterization,” IEEE Electron Device Letter, vol. 39, no. 2, pp. 172–175, 2018.

13.   Z. Zheng, R. Cheng, Y. Qu, X. Yu, W. Liu, Z. Chen, B. Chen, Q. Sun, W. Zhang, and Y. Zhao,“Real-Time Polarization Switch Characterization of HfZrO4 for Negative Capacitance Field-Effect,” IEEE Electron Device Letters, vol. 39, no. 9, pp. 1469–1472, 2018.

15.  X. Yu, R. Cheng, J. Sun, Y. Qu, J. Han, B. Chen, and Y. Zhao, “Quantitative Characterization of Fast-Trap Behaviors in Al2O3/GeOx/Ge pMOSFETs,” IEEE Transactions on Electron Devices, vol. 65, no. 7, pp. 2729–2735, 2018.

16.  Y. Qu, B. Chen, W. Liu, J. Han, and Y. Zhao, “Sub-1 ns Characterization Methodology for Transistor Electrical Parameter Extraction,” Microelectronics Reliability, 85, pp. 93–98, 2018.

17.    R. Cheng, X. Yu, B. Chen, J. Li, Y. Qu, J. Han, R. Zhang, and Y. Zhao, “Investigation of Self-Heating Effect on Ballistic Transport Characterization for Si FinFETs Featuring Ultrafast Pulsed IV Technique,” IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 909–916, 2017.



荣誉及奖励

2020 IEEE 国际可靠性物理大会最佳论文奖