Chenshaoqiang

Optoelectronic devices including: semicondcutor lasers, selar cells, LED;

Optoelectronic materials inclkuding: rare earth doped semiconductors and oxides;

Ultrast time-resoved spectroscopy based on Femtosecond High-power Ti:Sapphire Lasers and Optical Parametric Amplifiers

Electronic circuit design

Selected Publications

15. W. J. Liu,  X. L. Hu,  L. Y. Ying,‍‍‍‍‍‍‍‍‍‍ S.Q.Chen‍‍, ‍‍J. Y. Zhang, H. Akiyama, Z‍‍.P. Cai & B. P. Zhang‍‍*,

On the importance of cavity-length and heatdissipation in GaN-based vertical-cavity surface-emitting lasers

Scientific Reports.5, 9600 (2015).

14. ‍‍S.Q.Chen‍‍*, Lin Zhu,Masahiro Yoshita, Toshimitsu Mochizuki, Changsu Kim, Hidefumi Akiyama, Mitsuru Imaizumi, and Yoshihiko Kanemitsu.‍‍‍

Thorough subcells diagnosis in a multi-junction solar cell via absolute electroluminescence-efficiency measurements,

Scientific Reports.5, 7836 (2015).

13. A. Asahara,S.Q.Chen*(co-first),  T. Ito, M. Yoshita, W. Liu, B. Zhang, T. Suemoto, and H. Akiyama,

Direct generation of 2-ps blue pulses from gain-switched InGaN VCSEL assessed by up-conversion technique,

Scientific Reports.4, 6401 (2014).

12.S.Q.Chen, T. Ito, A. Asahara, M. Yoshita, W. Liu, J. Zhang, B. Zhang*, T. Suemoto, and H. Akiyama,

Spectral dynamics of picosecond gain-switched pulses from nitride-based vertical-cavity surface-emitting lasers,

Scientific Reports.4, 4325 (2014).

11. S.Q.Chen*, A. Asahara, T. Ito, J. Zhang, B. Zhang, T. Suemoto, M. Yoshita, and H. Akiyama,

Gain-switching dynamics in optically pumped single-mode InGaN vertical-cavity surface-emitting lasers,

Optics Express. 22, 4196 (2014).

10.S.Q.Chen*, M. Yoshita, A. Ishikawa, T. Mochizuki, S. Maruyama, H. Akiyama, Y. Hayamizu, L.N.Pfeiffer, K.W.West,

Intrinsic radiative lifetime derived via absorption cross section of one-dimensional excitons.

Scientific Reports 3, 1941 (2013)

9.S.Q.Chen*, M. Yoshita, T. Ito, T. Mochizuki, H. Akiyama, H. Yokoyama.

Gain-switched pulses from InGaAs ridge-quantum-well lasers limited by intrinsic dynamical gain suppression,

Optics Express. 21,7075 (2013).

8.S.Q.Chen*, M. Yoshita, A. Sato, T. Ito, H. Akiyama and H. Yokoyama.

Dynamics of short pulse generation via spectral filtering from intensely excited gain-switched 1.55-μm distributed-feedback laser diodes,

Optics Express 21, 10597 (2013).

7.S.Q.Chen*, A. Sato, T. Ito, M. Yoshita, H. Akiyama and H. Yokoyama.

Sub-5-ps optical pulse generation from a 1.55-μm distributed-feedback laser diode with nanosecond electric pulse excitation and spectral filtering,

Optics Express. 20, 24843 (2012).

6.S.Q.Chen*, Makoto Okano, Baoping Zhang, Masahiro Yoshita,Hidefumi Akiyama, and Yoshihiko Kanemitsu,

Blue 6-ps short-pulse generation in gain-switched InGaN vertical-cavity-surface-emitting lasers via optical pumping,

Applied Physics Letter 101, 191108 (2012 ).

5.S.Q.Chen*, M. Yoshita, T. Ito, T. Mochizuki, H. Akiyama, H. Yokoyama, K. Kamide, and T. Ogawa.

Analysis of gain-switching characteristics including strong gain saturation effects in low-dimensional semiconductor lasers,

Japanese Journal of Applied Physics 51, 098001 (2012).

4.S.Q.Chen*, B. Dierre, W. Lee, T. Sekiguchi, S. Tomita, H. Kudo, and K. Akimoto

Suppression of concentration quenching of Er-related luminescence in Er-doped GaN,

Applied Physics Letter 96, 181901 (2010)

3.S.Q.Chen*, Akira Uedono, Shoji Ishibashi, Shigeo Tomita, Hiroshi Kudo, and Katsuhiro Akimoto

Effect of V/III flux ratio on luminescence properties and defect formation of Er-doped GaN,

Applied Physics Letter 96, 051907 (2010).

2. S.Q.Chen*,  A. Uedono, J. Seo, J. Sawahata and K. Akimoto,

Relationship between Defects and Optical Properties of Er Doped GaN,

Journal of Crystal Growth 311, 3097 (2009)

1. S.Q.Chen*,  J. Seo, J. Sawahata, and K. Akimoto.

Incorporation site and luminescence characterizations of Er doped GaN grown by molecular beam epitaxy,

Journal of Crystal Growth 311, 2042 (2009)