Zhongni

[1] Y. Sun, N. Zhong*, Y. Y. Zhang, R. J. Qi, R. Huang, X. D. Tang, P. X. Yang, P. H. Xiang, C. G. Duan, Structure and electrical properties of epitaxial SrRuO3 thin films controlled by oxygen partial pressure, J. Appl. Phys., 120 (2016) 235108.

[2] N. Zhong, P. H. Xiang, Y. Y. Zhang, X. Wu, X. D. Tang, P. X. Yang, C. G. Duan, J. H. Chu, Polarization fluctuation behavior of lanthanum substituted Bi4Ti3O12 thin films, J. Appl. Phys., 118 (2015) 104102.

[3] P. H. Xiang, N. Zhong*, C. G. Duan, X. D. Tang, Z. G. Hu, P. X. Yang, Z. Q. Zhu, J. H. Chu, Strain controlled metal-insulator transition in epitaxial NdNiO3 thin films, J. Appl. Phys., 114 (2013) 243713.

[4] N. Zhong, J. J. Cao, H. Shima, H. Akinaga, Effect of Annealing Temperature on TiO2-Based Thin-Film-Transistor Performance, Ieee Electr Device L, 33 (2012) 1009.

[5] N. Zhong, H. Shima, H. Akinaga, Improvement of Rectifying Property in Pt/TiOx/Pt by Controlling Oxidization of TiOx Layer, Jpn. J. Appl. Phys., 50 (2011) 04DH04.

[6] N. Zhong, H. Shima, H. Akinaga, Mechanism of the performance improvement of TiO2-x-based field-effect transistor using SiO2 as gate insulator, Aip Adv, 1 (2011) 032167.

[7] N. Zhong, H. Shima, H. Akinaga, Transient Current Study on Pt/TiO2-x/Pt Capacitor, Jpn. J. Appl. Phys., 49 (2010) 04DJ15.

[8] N. Zhong, H. Shima, H. Akinaga, Rectifying characteristic of Pt/TiOx/metal/Pt controlled by electronegativity, Appl. Phys. Lett., 96 (2010) 042107.

[9] N. Zhong, H. Shima, H. Akinaga, Switchable Pt/TiO2-x/Pt Schottky Diodes, Jpn. J. Appl. Phys., 48 (2009) 05DF03.

[10] H. Shima, N. Zhong, H. Akinaga, Switchable rectifier built with Pt/TiOx/Pt trilayer, Appl. Phys. Lett., 94 (2009) 082905.

[11] N. Zhong, T. Shiosaki, Dielectric behavior of Bi3.25La0.75Ti3O12 ferroelectric film, J. Appl. Phys., 100 (2006) 034107.

[12] N. Zhong, S. Okamura, K. Uchiyama, T. Shiosaki, Single-ionized-oxygen-vacancy-related dielectric relaxation in Bi3.25La0.75Ti3O12 ferroelectric films, Appl. Phys. Lett., 87 (2005) 252901.