吴宇宁

2006 - 2012                物理学博士，美国佛罗里达大学

2002 - 2006                物理学学士, 中国科学技术大学

吴宇宁，物理与电子科学学院电子科学系青年研究员。2012年8月获美国佛罗里达大学物理学博士学位，随后先后在范德堡大学、佛罗里达大学、美国能源技术国家实验室从事博士后研究。主要从事半导体材料的第一性原理模拟和计算方法的开发，包括基于缺陷性质研究半导体的电学和光学性质、缺陷参与的激发态载流子动力学过程等。

1.基于半导体缺陷性质模拟识别实验缺陷构型

2.光伏、色心等体系中激发态载流子动力学过程

3.电子束等辐照条件下半导体的辐照损伤机理

发表论文：

1.Y.-N. Wu, WA Saidi, J Wenschell, T Tadano, P Ohodnicki, B Chorpening, and Y Duan, “Anharmonicity Explains Temperature Renormalization Effects of the Band Gap in SrTiO₃”, The Journal of Physical Chemistry Letters, 11, 2518 (2020)

2.CM Dai, T Zhang, Y.-N. Wu*, S Chen*, “Halide Double‐Perovskite Light‐Emitting Centers Embedded in Lattice‐Matched and Coherent Crystalline Matrix”, Advanced Functional Materials, 2000653 (2020)

3.CM Dai, P Xu, M Huang, Z Cai, D Han, Y.-N. Wu*, S Chen*, “NaSbSe₂ as a promising light-absorber semiconductor in solar cells: First-principles insights”, APL Materials, 7, 081122 (2019)

4.Y.-N. Wu, WA Saidi, P Ohodnicki, B Chorpening, and Y Duan, “First-Principles Investigations of the Temperature Dependence of Electronic Structure and Optical Properties of Rutile TiO₂”, The Journal of Physical Chemistry C 122 (39), 22642 (2018)

5.N Huo, Y Yang, Y.-N. Wu, XG Zhang, ST Pantelides, and G Konstantatos, “High carrier mobility in monolayer CVD-grown MoS 2 through phonon suppression”, Nanoscale 10 (31), 15071 (2018)

6.Y.-N. Wu, X.-G. Zhang, and S. T. Pantelides, “Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors”, Physical Review Letters 119 (10), 105501 (2017)

7.Y.-N. Wu, X.-G. Zhang, and S. T. Pantelides, “First-principles calculations reveal controlling principles for carrier mobilities in semiconductors”, Semiconductor Science and Technology, 31 (11), 115016 (2016)

8.J.P. Trinastic, R. Hamdan, Y.-N. Wu, L. Zhang  and H.-P. Cheng, “Unified interatomic potential and energy barrier distributions for amorphous oxides”, The Journal of Chemical Physics, 139 (15),  154506 (2013)

9.Y.-N. Wu, X.-G. Zhang, and H.-P. Cheng, “Giant Molecular magnetocapacitance”, Physical Review Letters110, 217205 (2013).

10.Y.-P. Wang, X.-F. Han, Y.-N. Wu, and H.-P. Cheng, “Adsorption of tris (8-hydroxyquinoline) aluminum molecules on cobalt surfaces”, Physical Review B, 85, 144430 (2012).

11.Y.-N. Wu, N. Kebaïli, H.-P. Cheng, A. Masson, and C. Bréchignac, “Enhancement of Ag cluster mobility on Ag surfaces by chloridation”, Journal of Chemical Physics,137, 184705 (2012).

12.Y.-N. Wu,M. Schmidt,J. Leygnier,H.-P. Cheng,A. Masson, and C. Bréchignac, “Adsorption of small molecules on silver cluster”, Journal of Chemical Physics,136, 024314 (2012).

13.Y.-N. Wu, L. Li and H.-P. Cheng, “First-principles studies of Ta₂O₅ polymorphs”, Physical Review B, 83, 144105 (2011).

14.C. Cao, Y.-W. Chen, Y.-N. Wu, E. Deumens and H.-P. Cheng, “OPAL: A multiscale multicenter simulation package based on MPI-2 protocol”, International Journal of Quantum Chemistry, 111, 4020 (2011).

15.C. Cao, Y.-N. Wu, R. Hamdan, Y. Wang and H.-P. Cheng, “Accurate projected augmented wave datasets for BaFe₂As₂”, New Journal of Physics,12, 123029 (2010).

16.L. Tang, X. Zhang, QM Guo, Y.-N. Wu, L.-L. Wang and H.-P. Cheng, “Two bonding configurations for individually adsorbed C-60 molecules on Au(111)”, Physical Review B, 82, 125414 (2010).

17.L. Li, Y.-N. Wu and H.-P. Cheng, “First-principles calculations of Fe-doped monolayer C-60 on h-BN/Ni(111) surface”, Journal of Chemical Physics, 132, 074702 (2010).

学术报告：

1.First-principles Study of the Temperature Effect on Energy Gaps in High-temperature Gas Sensor Materials, 2018年美国化学工程学会 AIChE 年会

2.First-principles Study of the Temperature Dependence of Energy Gaps and Optical Properties in High-temperature Gas Sensor Materials 2018年美国化学协会ACS 秋季会议（第256次）

3.First-principles Study of Temperature Dependence of Energy Gaps in Gas Sensor Materials, 2017年美国化学工程学会 AIChE 年会

4.First-principles Calculations Reveal Controlling Principles for Carrier Mobilities in Semiconductors, 2015年美国Sanibel Symposium

5.Giant Molecular Magnetocapacitance, 2015年美国Telluride Science Research Center conference on Nanomaterials受邀报告

6.First-principles Calculations Reveal Controlling Principles for Carrier Mobilities in Semiconductors, 2015年美国物理协会年会March Meeting

7.First-principles Calculation of Coulomb Scattering in Silicon, 2014年美国物理协会年会March Meeting