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王基庆

物理与电子科学学院      

个人资料

  • 部门: 物理与电子科学学院
  • 毕业院校:
  • 学位:
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  • 联系电话:
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  • 电子邮箱: jqwang@ee.ecnu.edu.cn
  • 办公地址: 东川路500号华东师范大学信息楼D219
  • 通讯地址:

教育经历

工作经历

个人简介

社会兼职

研究方向

半导体材料和器件;光电子和自旋电子学;微纳固体材料和器件;材料计算和器件模拟

欢迎有志青年加入本研究课题组!

开授课程

科研项目

学术成果

主持或参加科研项目(课题)及人才计划项目情况(按时间倒序排序):

1.国家自然科学基金面上项目,61574150,Bi对III-V半导体纳米线晶体结构的调控,机理及相关光电特性研究,2016/01-2016/12, 16万元,已结题,参加

2.国家自然科学基金面上项目,61474045,窄禁带氧化物钙钛矿太阳电池研究,2015/01-2018/12,85万元,在研,参加

3.国家自然科学基金重点项目,60990312,高居里温度自旋量子结构与器件,2010/01-2013/12,190万元,已结题,参加

4. 国家自然科学基金面上项目,60876067,Mn调制掺杂一维铁磁半导体系统的自旋量子调控研究,2009/01-2011/12,28万元,已结题,主持

5国家自然科学基金青年基金,60306002,离子注入GaAs基自旋源的材料芯片方法研究,2004/01-2006/12,25万元,已结题,主持

代表性研究成果和学术奖励情况(每项均按时间倒序排序)

1.第一作者论文

(1).Jiqing Wang*, Deshuang Shang, Huibing Mao, Jianguo Yu, Qiang Zhao,Pingxiong Yang, Huaizhong Xing, Bonding to antibonding transition for hole ground states in coupled InAs quantum wires,Solid State Communications, 2013, 156(2):41-44

(2). Jiqing Wang*, Huibing Mao, Jianguo Yu, Qiang ZhaoHongying Zhang, Pingxiong Yang, Ziqiang Zhu, Junhao Chu, Electrically tunable electron g factors in coupled InAs/GaAs pyramid quantum dots, Appl.Phys.Lett, 2010, 96(6): 062108-062110

(3). Jiqing Wang*, Liu Yan, Huibing Mao, Qiang Zhao, Jianguo Yu,Yong Zhang, Ziqiang Zhu, Junhao Chu, Manipulation of spin polarization by charge polarization in GaMnN ferromagnetic resonant tunneling diode, Appl.Phys.Lett, 2009,94(17):172501-172503

(4). Jiqing Wang* , Bin Lv, Huibin Mao, Qiang Zhao, Jianguo Yu, Yong Zhang, Yan Liu, Ziqiang Zhu, Huaizhong Xing, Different acceptor behaviors in two-dimensional hole gas system formed in Mn-doped GaAs/p-AlGaAs ferromagnetic heterostructures, Appl.Phys.Lett, 2007, 91(5):052509-052511

2. 通讯作者论文

(1).Changsheng Song, Jiqing Wang*, Weixian Lin, Huibing Mao, Qiang Zhao, Pingxiong Yang, Huaizhong Xing,Tuning magnetic anisotropy of FeMoS2 by charge injection and strain engineering, Journal of Physics D: Applied Physics,2015, 48(4):485001

(2).Changsheng Song, Jiqing Wang*, Weixian Lin, Huibing Mao, Qiang Zhao, Pingxiong Yang, Huaizhong Xing, Engineering the Effective p‑Type Dopant in GaAs/InAs Core-Shell Nanowires with Surface Dangling Bonds, Journal of Physical Chemistry C, 2014, 118: 25209.

(3).Changsheng Song, Jiqing Wang*, Weixian Lin, Huibing Mao, Qiang Zhao, Pingxiong Yang, Huaizhong Xing, Enhanced efficiency of p-type doping by band-offset effect in wurtzite and zinc-blendeGaAs/InAs-core-shell nanowires, Journal of Applied Physics, 2014,116(9): 093704

(4).Changsheng Song, Jiqing Wang*, Weixian Lin, Huibing Mao, Qiang Zhao, Pingxiong Yang, Huaizhong Xing, Manipulation of band structures in wurtzite and zinc-blende GaAs/InAs-core-shell nanowires, Journal of Applied Physics, 2013, 114(11): 113704-113708

(5). Deshuang Shang, Jiqing Wang*, Huibing Mao, Qiang Zhao, Tuning of electron g factors by electric fields in asymmetric InAs quantum dot molecules, Journal of Physics D: Applied Physics, 2011, l44:205108-205112

(6). Yan Liu, Jiqing Wang*, Huaizhong Xing, Naiyun Tang, Bin Lv, Huibing Mao, Qiang Zhao,Yong Zhang, Ziqiang Zhu, Giant magnetocurrent in triple-barrier ferromagnetic resonant-tunneling diode with different magnetization configurations, Solid State Communications,2009, 149:156-158

(7). Bin Lv, Jiqing Wang *, Jianguo Yu, Huibing Mao, Ye Shen, Ziqiang Zhu, Huaizhong Xing, Enhancement of Curie temperature under low electric fields in Mn selectively δ-doped GaAs/AlGaAs wide quantum wells, Appl.Phys.Lett, 2007, 90(14):142513-145215

荣誉及奖励

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