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  • 学术成果
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段纯刚

职称：

直属机构： 物理与电子科学学院

学科：

10 访问

相关教师

个人资料

  • 部门： 物理与电子科学学院
  • 性别： 男
  • 专业技术职务： 教授
  • 毕业院校： 中科院物理所
  • 学位： 研究生
  • 学历： 博士
  • 联系电话： 021-54345279
  • 电子邮箱： cgduan@clpm.ecnu.edu.cn
  • 办公地址： 华东师范大学闵行校区办公楼
  • 通讯地址： 上海市东川路500号，200241
  • 邮编： 200241
  • 传真： (86)-21-54345119

教育经历

1994年 武汉大学物理系本科

1998年 中科院物理所理论物理博士

工作经历

1998.10--2007.05 美国内布拉斯加大学博士后、研究助理教授

2007.06--2008.03 同济大学物理系教授

2008.03--2016.06 华东师范大学信息科学技术学院教授

2016.06--2019.06 华东师范大学信息科学技术学院常务副院长

2019.07--2021.12 华东师范大学物理与电子科学学院常务副院长

2021.03--2022.06 上海推进科技创新中心建设办公室平台处副处长（挂职）

2021.07--     华东师范大学发展规划部部长兼重点建设办公室主任


个人简介

段纯刚，华东师范大学紫江特聘教授，教育部创新团队带头人,国家杰出青年基金获得者,国家“万人计划”领军人才。1994年武汉大学物理系本科毕业，1998年中科院物理所理论物理博士毕业。1998年至2007年在美国从事研究工作，2008年加入华东师范大学，目前担任极化材料与器件教育部重点实验室主任，华东师范大学发展规划部部长兼重点建设办公室主任，曾任华东师范大学信息科学与技术学院常务副院长，物理与电子科学学院常务副院长。


主要从事新型电子功能材料研究，尤其聚焦磁性、铁电、多铁和谷电子学材料，取得了一系列重要创新成果，主要包括：①提出铁谷体概念和发展了二维铁性研究;②理论设计并实验制备了铁性隧道结，由此开展了基于铁性的神经形态器件研究；③发现了多种新型磁电效应，拓展了磁电效应研究方向，并据此开展了相应实验研究，验证了理论预言。在Nat. Mat.、Nat. Elec.、Nat. Comm.、PRL、Adv. Mater.、Nano Lett.等国际著名学术刊物上共发表论文300余篇，被Rev. Mod. Phys.、Science、Nature及其子刊等国际学术刊物引用15800余次，其中32篇文章引用上百次(谷歌学术)，另为四部中英文专著撰写章节。




社会兼职


现为中国材料研究学会计算材料学分会委员,中国硅酸盐学会微纳技术分会委员，上海计算物理专业委员，曾任第4届国际材料大会多铁体分会(2012年）国际顾问委员会成员，第4届亚太多铁会委员,目前担任NPJ comp. Mater.副主编，Journal of Physics: Condensed Matter, Journal of Materiomics，Frontiers in Condensed Matter Physics等国际知名杂志编委。


中科院物理所磁学国家重点实验室第八届学术委员会委员

南方科技大学广东省信息功能氧化物材料与器件重点实验室第一届学术委员会委员

西湖大学浙江省量子材料重点实验室第一届学术委员会委员




研究方向

主要从事固体材料结构和物性的理论研究和计算模拟‚近期研究领域包括：

    • 自旋电子材料、谷电子材料和多铁体等信息功能材料

    • 铁电、铁磁和多铁隧道结

    • 基于铁电和多铁材料的神经突触模拟

拟招收两至三名在上述领域有丰富经验的博士后‚有兴趣可以来email联系！


专业杂志链接：

NatureNature Phys.Nature Mater.Nature Nanotech.
ScienceNano Lett.JACSAdv. Mater.
APS JournalAPLJAPAPS Status Inquiry
EPLJPCMMMM

招生与培养

开授课程

固体物理 （本科）

磁电子学 （研究生）


科研项目

国家自然基金面上项目50771072铁电效应控制铁磁性金属薄膜磁学性质的第一性原理研究2008.1~2010.12
国家自然基金重点项目50832003复合磁电薄膜材料的功能原理与制备科学2009.1~2012.12
教育部创新团队IRT-0918极化类信息功能材料2010.1~2012.12
国家杰出青年61125403新型信息功能材料2012.1~2015.12
上海优秀学术带头人13XD1401700基于界面/表面效应的全电学自旋调控2013.7.1-2015.6.30
9732013CB922301固态量子器件和电路2013.1～2017.12
9732014CB921104低维磁性耦合体系的新物性及多场调控(低维自旋体系的电场与超快光场调控研究)2014.1～2018.12
国家自然基金面上项目51572085铋系钙钛矿型多铁体磁电耦合起源的理论研究2016.01-2019.12
国家自然基金面上项目11774092电控铁谷体谷极化的第一性原理研究2018.01-2021.12
2017年度“创新行动计划”基础研究项目17JC1402500铁电人工突触固态器件2017.9.1-2019.8.31
2019年度“创新行动计划”基础研究项目19JC1416700基于铁电效应的存算一体化和神经形态计算2019.11.1-2022.10.31


学术成果


近期代表性学术成果：


1.        G. Feng, Q. Zhu, X. Liu, L. Chen, X. Zhao, J. Liu, S. Xiong, K. Shan, Z. Yang, Q. Bao, F. Yue, H. Peng, R. Huang, X. Tang, J. Jiang, W. Tang, X. Guo, J. Wang, A. Jiang, B. Dkhil, B. Tian, J. Chu, C. Duan. A ferroelectric fin diode for robust non-volatile memory. Nat. Commun. 15, 513 (2024).

 

2.        X. Deng, Y.-X. Liu, Z.-Z. Yang, Y.-F. Zhao, Y.-T. Xu, M.-Y. Fu, Y. Shen, K. Qu, Z. Guan, W.-Y. Tong, Y.-Y. Zhang, B.-B. Chen, N. Zhong, P.-H. Xiang, C.-G. Duan. Spatial evolution of the proton-coupled Mott transition in correlated oxides for neuromorphic computing. Sci. Adv. 10, eadk9928 (2024).

  

3.        Z. Guan, Y.-Z. Zheng, W.-Y. Tong, N. Zhong, Y. Cheng, P.-H. Xiang, R. Huang, B.-B. Chen, Z.-M. Wei, J.-h. Chu, C.-G. Duan. 2D Janus Polarization Functioned by Mechanical Force. Adv. Mater. n/a, 2403929 (2024).

 

4.        J. Zeng, G. Feng, G. Wu, J. Liu, Q. Zhao, H. Wang, S. Wu, X. Wang, Y. Chen, S. Han, B. Tian, C. Duan, T. Lin, J. Ge, H. Shen, X. Meng, J. Chu, J. Wang. Multisensory Ferroelectric Semiconductor Synapse for Neuromorphic Computing. Adv. Funct. Mater. 34, 2313010 (2024).

 

5.        W. Xu, Y.-P. Shao, J.-L. Wang, J.-D. Zheng, W.-Y. Tong, C.-G. Duan. Origin of metallic ferroelectricity in group-V monolayer black phosphorus. Phys. Rev. B 109, 035421 (2024).

 

6.        Y. Wang, C. Huang, Z. Cheng, Z. Liu, Y. Zhang, Y. Zheng, S. Chen, J. Wang, P. Gao, Y. Shen, C. Duan, Y. Deng, C.-W. Nan, J. Li. Halide Perovskite Inducing Anomalous Nonvolatile Polarization in Poly(vinylidene fluoride)-based Flexible Nanocomposites. Nat. Commun. 15, 3943 (2024).

 

7.        J.-L. Wang, Y.-F. Zhao, W. Xu, J.-D. Zheng, Y.-P. Shao, W.-Y. Tong, C.-G. Duan. Nanotube ferroelectric tunnel junctions with an ultrahigh tunneling electroresistance ratio. Mater. Horiz. 11, 1325 (2024).

 

8.        H. Wang, J. Meng, J. Lin, B. Xu, H. Ma, Y. Kan, R. Chen, L. Huang, Y. Chen, F. Yue, C.-G. Duan, J. Chu, L. Sun. Origin of the light-induced spin currents in heavy metal/magnetic insulator bilayers. Nat. Commun. 15, 4362 (2024).

 

9.        F. Sui, H. Li, R. Qi, M. Jin, Z. Lv, M. Wu, X. Liu, Y. Zheng, B. Liu, R. Ge, Y.-N. Wu, R. Huang, F. Yue, J. Chu, C. Duan. Atomic-level polarization reversal in sliding ferroelectric semiconductors. Nat. Commun. 15, 3799 (2024).

 

10.     M. Lv, J. Wang, M. Tian, N. Wan, W. Tong, C. Duan, J. Xue. Multiresistance states in ferro- and antiferroelectric trilayer boron nitride. Nat. Commun. 15, 295 (2024).

 

11.     Q. Li, L. Wei, N. Zhong, X. Shi, D. Han, S. Zheng, F. Du, J. Shi, J. Chen, H. Huang, C. Duan, X. Qian. Low-k nano-dielectrics facilitate electric-field induced phase transition in high-k ferroelectric polymers for sustainable electrocaloric refrigeration. Nat. Commun. 15, 702 (2024). 

 

12.     Y.-K. Zhang, J.-D. Zheng, W.-Y. Tong, Y.-F. Zhao, Y.-F. Tan, Y.-H. Shen, Z. Guan, F.-Y. Yue, P.-H. Xiang, N. Zhong. Ferroelastically controlled ferrovalley states in stacked bilayer systems with inversion symmetry. Phys. Rev. B 108, L241120 (2023).

 

13.     D.-Y. Zhang, Y. Sang, T. K. Das, Z. Guan, N. Zhong, C.-G. Duan, W. Wang, J. Fransson, R. Naaman, H.-B. Yang. Highly Conductive Topologically Chiral Molecular Knots as Efficient Spin Filters. J. Am. Chem. Soc. 145, 26791 (2023).

 

14.     W. Xu, J. D. Zheng, W. Y. Tong, J. L. Wang, Y. P. Shao, Y. K. Zhang, Y. F. Tan, C. G. Duan. Strain‐Induced Ferroelectric Phase Transition in Group‐V Monolayer Black Phosphorus. Adv. Quantum Technol. 6, 2200169 (2023).

 

15.     G. Wu, X. Zhang, G. Feng, J. Wang, K. Zhou, J. Zeng, D. Dong, F. Zhu, C. Yang, X. Zhao. Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing. Nat. Mater. 22, 1499 (2023).

 

16.     X. Meng, Y. Du, W. Wu, N. B. Joseph, X. Deng, J. Wang, J. Ma, Z. Shi, B. Liu, Y. Ma. Giant superlinear power dependence of photocurrent based on layered Ta2NiS5 photodetector. Adv. Sci. 10, 2300413 (2023).

 

17.     Y.-Q. Li, X. Zhang, X. Shang, Q.-W. He, D.-S. Tang, X.-C. Wang, C.-G. Duan. Magnetic and Ferroelectric Manipulation of Valley Physics in Janus Piezoelectric Materials. Nano Lett. 23, 10013 (2023).

 

18.     J.-D. Zheng, Y.-F. Zhao, Z.-Q. Bao, Y.-H. Shen, Z. Guan, N. Zhong, F.-Y. Yue, P.-H. Xiang, C.-G. Duan. Flexoelectric effect induced p–n homojunction in monolayer GeSe. 2D Mater. 9, 035005 (2022).

 

19.     P.-C. Wu, C.-C. Wei, Q. Zhong, S.-Z. Ho, Y.-D. Liou, Y.-C. Liu, C.-C. Chiu, W.-Y. Tzeng, K.-E. Chang, Y.-W. Chang, J. Zheng, C.-F. Chang, C.-M. Tu, T.-M. Chen, C.-W. Luo, R. Huang, C.-G. Duan, Y.-C. Chen, C.-Y. Kuo, J.-C. Yang. Twisted oxide lateral homostructures with conjunction tunability. Nat. Commun. 13, 2565 (2022).

 

20.     J. Lao, M. Yan, B. Tian, C. Jiang, C. Luo, Z. Xie, Q. Zhu, Z. Bao, N. Zhong, X. Tang, L. Sun, G. Wu, J. Wang, H. Peng, J. Chu, C. Duan. Ultralow-Power Machine Vision with Self-Powered Sensor Reservoir. Adv. Sci. 9, 2106092 (2022).

 

21.     Y.-H. Lai, J.-D. Zheng, S.-C. Lu, Y.-K. Wang, C.-G. Duan, P. Yu, Y.-Z. Zheng, R. Huang, L. Chang, M.-W. Chu, J.-H. Hsu, Y.-H. Chu. Antiferroelectric PbSnO3 epitaxial thin films. Adv. Sci. 9, 2203863 (2022).

 

22.     Z. Guan, Y. Zhao, X. Wang, N. Zhong, X. Deng, Y. Zheng, J. Wang, D. Xu, R. Ma, F. Yue, Y. Cheng, R. Huang, P. Xiang, Z. Wei, J. Chu, C. Duan. Electric-field-induced room-temperature antiferroelectric–ferroelectric phase transition in van der Waals layered GeSe. ACS Nano 16, 1308 (2022).

 

23.     Z. Guan, Y.-K. Li, Y.-F. Zhao, Y. Peng, G. Han, N. Zhong, P.-H. Xiang, J.-H. Chu, C.-G. Duan. Mechanical polarization switching in Hf0.5Zr0.5O2 thin film. Nano Lett. 22, 4792 (2022).

 

24.     C.-C. Chiu, S.-Z. Ho, J.-M. Lee, Y.-C. Shao, Y. Shen, Y.-C. Liu, Y.-W. Chang, Y.-Z. Zheng, R. Huang, C.-F. Chang, C.-Y. Kuo, C.-G. Duan, S.-W. Huang, J.-C. Yang, Y.-D. Chuang. Presence of Delocalized Ti 3d Electrons in Ultrathin Single-Crystal SrTiO3. Nano Lett. 22, 1580 (2022).

 

25.     Y.-F. Zhao, Y.-H. Shen, H. Hu, W.-Y. Tong, C.-G. Duan. Combined piezoelectricity and ferrovalley properties in Janus monolayer VClBr. Phys. Rev. B 103, 115124 (2021).

 

26.     L. Zhang, G. S. Shi, B. Q. Peng, P. F. Gao, L. Chen, N. Zhong, L. H. Mu, L. J. Zhang, P. Zhang, LuGou, Y. M. Zhao, S. S. Liang, J. Jiang, Z. J. Zhang, H. T. Ren, X. L. Lei, R. B. Yi, Y. W. Qiu, Y. F. Zhang, X. Liu, M. H. Wu, L. Yan, C.-G. Duan, S. L. Zhang, H. P. Fang. Novel 2D CaCl crystals with metallicity, room-temperature ferromagnetism, heterojunction, piezoelectricity-like property and monovalent calcium ions. Natl. Sci. Rev. 8, nwaa274 (2021).

 

27.     M. Yan, Q. Zhu, S. Wang, Y. Ren, G. Feng, L. Liu, H. Peng, Y. He, J. Wang, P. Zhou, X. Meng, X. Tang, J. Chu, B. Dkhil, B. Tian, C. Duan. Ferroelectric Synaptic Transistor Network for Associative Memory. Adv. Electron. Mater. 7, 2001276 (2021).

 

28.     D.-D. Xu, R.-R. Ma, A.-P. Fu, Z. Guan, N. Zhong, H. Peng, P.-H. Xiang, C.-G. Duan. Ion adsorption-induced reversible polarization switching of a van der Waals layered ferroelectric. Nat. Commun. 12, 655 (2021).

 

29.     M.-F. Tsai, Y.-Z. Zheng, S.-C. Lu, J.-D. Zheng, H. Pan, C.-G. Duan, P. Yu, R. Huang, Y.-H. Chu. Antiferroelectric Anisotropy of Epitaxial PbHfO3 Films for Flexible Energy Storage. Adv. Funct. Mater. 31, 2105060 (2021).

 

30.     Y.-H. Shen, W.-Y. Tong, H. Hu, J.-D. Zheng, C.-G. Duan. Exotic Dielectric Behaviors Induced by Pseudo-Spin Texture in Magnetic Twisted Bilayer. Chin. Phys. Lett. (Express Letter) 38, 037501 (2021).

 

31.     Y. Shen, X. Wan, Q. Zhao, G. Li, C.-G. Duan. Non-d0 ferroelectricity from semicovalent superexchange in bismuth ferrite. Phys. Rev. B 104, 024421 (2021).

 

32.     Y.-D. Liou, S.-Z. Ho, W.-Y. Tzeng, Y.-C. Liu, P.-C. Wu, J. Zheng, R. Huang, C.-G. Duan, C.-Y. Kuo, C.-W. Luo, Y.-C. Chen, J.-C. Yang. Extremely Fast Optical and Nonvolatile Control of Mixed-Phase Multiferroic BiFeO3 via Instantaneous Strain Perturbation. Adv. Mater. 33, 2007264 (2021).

 

33.     X. Deng, S.-Q. Wang, Y.-X. Liu, N. Zhong, Y.-H. He, H. Peng, P.-H. Xiang, C.-G. Duan. A Flexible Mott Synaptic Transistor for Nociceptor Simulation and Neuromorphic Computing. Adv. Funct. Mater. 31, 2101099 (2021).

 

34.     G. Wu, B. Tian, L. Liu, W. Lv, S. Wu, X. Wang, Y. Chen, J. Li, Z. Wang, S. Wu, H. Shen, T. Lin, P. Zhou, Q. Liu, C. Duan, S. Zhang, X. Meng, S. Wu, W. Hu, X. Wang, J. Chu, J. Wang. Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains. Nat. Electron. 3, 43 (2020).

 

35.     D. Li, L. Zhu, X. Liu, W. Xiao, J. Yang, R. Ma, L. Ding, F. Liu, C. Duan, M. Fahlman, Q. Bao. Enhanced and Balanced Charge Transport Boosting Ternary Solar Cells Over 17% Efficiency. Adv. Mater. 32, 2002344 (2020).

 

36.     H. Hu, W.-Y. Tong, Y.-H. Shen, X. Wan, C.-G. Duan. Concepts of the half-valley-metal and quantum anomalous valley Hall effect. npj Comput. Mater. 6, 129 (2020).

 

37.     Z. Guan, H. Hu, X. Shen, P. Xiang, N. Zhong, J. Chu, C. Duan. Research Progress in Two-Dimensional Ferroelectric Materials. Adv. Electron. Mater. 6, 1900818 (2020).

 

38.     X. Deng, Y.-F. Zhao, N. Zhong, F.-Y. Yue, R. Huang, H. Peng, X.-D. Tang, P.-H. Xiang, Y.-H. Chu, C.-G. Duan. Proton-Mediated Phase Control in Flexible and Transparent Mott Transistors. Adv. Electron. Mater. 6, 1900742 (2020).

 

39.     D. D. Xu, X. Deng, Y. F. Zhao, R. R. Ma, N. Zhong, R. Huang, H. Peng, P. H. Xiang, C. G. Duan. Hydrogenation Dynamics of Electrically Controlled Metal-Insulator Transition in Proton-Gated Transparent and Flexible WO3 Transistors. Adv. Funct. Mater. 29, 1902497 (2019).

 

40.     B. B. Tian, L. Liu, M. G. Yan, J. L. Wang, Q. B. Zhao, N. Zhong, P. H. Xiang, L. Sun, H. Peng, H. Shen, T. Lin, B. Dkhi, X. J. Meng, J. H. Chu, X. D. Tang, C. G. Duan. A Robust Artificial Synapse Based on Organic Ferroelectric Polymer. Adv. Electron. Mater. 5, 1800600 (2019).

 

41.     Y. Shen, J. Cai, H. C. Ding, X. W. Shen, Y. W. Fang, W. Y. Tong, X. G. Wan, Q. B. Zhao, C. G. Duan. Role of Lone-Pairs in Driving Ferroelectricity of Perovskite Oxides: An Orbital Selective External Potential Study. Adv. Theory Simul. 2, 9 (2019).

 

42.     X.-W. Shen, Y.-W. Fang, B.-B. Tian, C.-G. Duan. Two-Dimensional Ferroelectric Tunnel Junction: The Case of Monolayer In:SnSe/SnSe/Sb:SnSe Homostructure. ACS Appl. Electron. Mater. 1, 1133 (2019).

 

43.     Q. Y. Ji, S. Z. Pan, P. L. He, J. P. Wang, P. F. Lu, H. Li, X. C. Gong, K. Lin, W. B. Zhang, J. Y. Ma, H. X. Li, C. G. Duan, P. Liu, Y. Bai, R. X. Li, F. He, J. Wu. Timing Dissociative Ionization of H2 Using a Polarization-Skewed Femtosecond Laser Pulse. Phys. Rev. Lett. 123, 233202 (2019).

 

44.     Z. Guan, N. Yang, Z. Q. Ren, N. Zhong, R. Huang, W. X. Chen, B. B. Tian, X. D. Tang, P. H. Xiang, C. G. Duan, J. H. Chu. Mediation in the second-order synaptic emulator with conductive atomic force microscopy. Nanoscale 11, 8744 (2019).

 

45.     C.-G. Duan. Topology paving the way to controllable readout of ferroelectricity—self-assembled topologically confined domain walls become the key to ferroelectric memory. J. Materiomics 5, 49 (2019).



 论著（章节）


 

1.       Xin-Wei Shen, He Hu, Chun-Gang Duan. Spintronic 2D Materials: Fundamentals and Applications, Chapter 3, Two-dimensional ferrovalley materials (Materials Today). Elsevier Science (2019). ISBN: 978-0-081-02155-2

2.       Y.W. Fang, W.Y. Tong, C.G. Duan, Integrated Multiferroic heterostructures and applications, Edited by Ming Liu and Ziyao Zhou, Chapter 4, Multiferroic Simulations, Wiley-VCH (2019).  ISBN: 978-3-527-34177-1.

3.       W.Y. Tong, C.G. Duan, Exchange Bias, Edited by Surender Kumar Sharma, Chapter 7, All-Electric Spintronics through Surface/Interface Effects, CRC Press (2017). ISBN: 978-1-4987-9723-8.

4.       龚士静，段纯刚，《自旋电子学导论》韩秀峰主编，第24章 “基于磁电耦合效应的电控磁性研究”，科学出版社 (2014). ISBN: 978-7-0304-2826-4.

 

前期代表性工作：



  1. 铁电控制磁性：（国际最早提出铁电调控界面物性的工作之一）
    Chun-gang Duan    , S. S. Jaswal, E. Y. Tsymbal, Predicted Magnetoelectric Effect in Fe/BaTiO3 Multilayers: Ferroelectric Control of Magnetism. Phys. Rev. Lett. 97, 047201 (2006).  (highlighted in the Research News section in Materials Today Vol. 9, October 2006).


  2. 电压（电场）调控磁性：（VCMA的理论基础）
    Chun-Gang Duan    . J. P. Velev, R. F. Sabirianov, Ziqiang Zhu, Junhao Chu, S. S. Jaswal, and E. Y. Tsymbal, Surface Magnetoelectric effect in ferromagnetic metal films. Phys. Rev. Lett. 101, 137201 (2008). 


  3. 多铁隧道结的四态存储：
    J. P. Velev,     Chun-Gang Duan. J. D. Burton, Alexander Smogunov, Manish K. Niranjan, Erio Tosatti, S. S. Jaswal, and Evgeny Y. Tsymbal, Magnetic tunnel junctions with ferroelectric barriers: Prediction of four resistance states from first-principles. Nano Lett. 9, 427 (2009). 


  4. 理论预言纳米铁电性的可能：
    Chun-gang Duan    , R. F. Sabiryanov, W. N. Mei,S. S. Jaswal, E. Y. Tsymbal, Interface Effect on Ferroelectricity at the Nanoscale. Nano Lett. 6, 483 (2006).


  5.    提出铁谷体概念和预言反常谷霍尔效应：    

       W. Y. Tong, S. J. Gong, X. Wan, C. G. Duan. Concepts of ferrovalley material and anomalous valley Hall effect. Nat. Commun. 7, 13612 (2016).

  6.    制备出有机铁电隧道结：    

    B. B. Tian, J. L. Wang, S. Fusil, Y. Liu, X. L. Zhao, S. Sun, H. Shen, T. Lin, J. L. Sun, C. G. Duan, M. Bibes, A. Barthélémy, B. Dkhil, V. Garcia, X. J. Meng, J. H. Chu. Tunnel electroresistance through organic ferroelectrics. Nat. Commun. 7, 11502 (2016).




综述和前瞻文章：

  1. Chun-gang Duan‚ R. F. Sabiryanov‚ W. N. Mei‚ P. A. Dowben‚ S. S. Jaswal‚ E. Y. Tsymbal‚ "Electronic‚ magnetic and transport properties of rare-earth monopnictides"‚ invited Review Article‚ J. Phys: Cond. Matt. 19‚ 315220 (2007). (IOP Link)

  2. 段纯刚‚ "磁电效应研究进展". 邀请文章‚ 物理学进展 29‚ 215 (2009).

  3. Chun-gang Duan‚ "Interface/surface magnetoelectric effects: new routes to the electric field control of magnetism"‚ invited paper‚ Frontiers of Physics 7, 375 (2012).

  4. Shi-Jing Gong, Hang-Chen Ding, Wan-Jiao Zhu, Chun-Gang Duan,* Ziqiang Zhu, Junhao Chu. "A new pathway towards all-electric spintronics: electric-field control of spin states through surface/interface effects", Science China: Phys., Mech. & Astro. 56, 232-244(2013).

  5. 方跃文，高永超，龚士静，段纯刚，"铁电与多铁隧道结研究进展". 邀请文章‚ 物理学进展 33, 382 (2013).

  6. 段纯刚，赵永刚, “多铁性隧道结：1+1≠2”，物理，43, 99 (2014), 邀请文章.



近期国际学术报告：

  1. "Spin-dependent Optical Properties of Multiferroic EuO and GdN", March Meeting of the American Physical Society‚ Boston‚ 2012.

  2. "Electric-field control of magnetic ordering in the tetragonal-like BiFeO3," 4TH APCTP workshop on multiferroics, Beijing, 2012.

  3. "Magnetoelectric and multiferroic memory: first-principles studies", invited talk, The 13th Asian Workshop on First-Principles Electronic Structure Calculations, POSTECH, Pohang, Korea, 2010.

  4. "Ferroelectric and Multiferroic Tunnel Junctions", invited talk, IUMRS-ICA2010 , Qiangdao (2010).

  5. "Prediction of our resistance states in multiferroic tunnel junctions"‚ Invited Talk‚ Joint Meeting of 12th International Meeting on Ferroelectricity & 18th IEEE International Symposium on the Applications of Ferroelectrics‚ Xi´An‚ China (2009).

  6. "Surface magnetoelectric effects from first principles"‚ March Meeting of the American Physical Society‚ Pittsburgh‚ 2009.

  7. "Magnetoelectric effect in ferromagnetic metal films"‚ Materials Research Society Spring Meeting‚ San Francisco‚ 2008.

  8. "Ferroelectric switching induced magnetic anisotropy in Fe/BaTiO3 bilayers"‚ March Meeting of the American Physical Society‚ Denver‚ 2007.

  9. "Magnetic ordering of rare-earth compounds: firstprinciples studies"‚ March Meeting of the American Physical Society‚Baltimore‚ 2006.

  10. "Interface effect to the nanoscale ferroelectricity"‚ March Meeting of the American Physical Society‚ Baltimore‚ 2006.


荣誉及奖励

获奖：


“极化类薄膜材料的磁电耦合、隧穿输运及光电特性”，上海市自然科学二等奖（2012），第一完成人


第十二届上海市自然科学牡丹奖（2017）


全国归侨侨眷先进个人