Chengyan

2023年

130.J.H. Yuan, G.Q. Mao, K.H. Xue, N. Bai, C.X. Wang, Y. Cheng, H.B. Lyu, H.J. Sun, X.S. Wang, X.S. Miao.Ferroelectricity in HfO₂ from a Coordination Number Perspective. Chemistry of Materials, 2023, 35: 94-103.

129.C. Liu, Q.Y. Tang, Y.H. Zheng, J. Zhao, W.X. Song, Y. Cheng. Effect of vacancy ordering on the grain growth of Ge₂Sb₂Te₅ film. Nanotechnology, 2023, 34: 155703.

128.C. Liu, Y.H. Zheng, T.J. Xin, Y.Z. Zheng, R. Wang, Y. Cheng. The Relationship between Electron Transport and Microstructure in Ge₂Sb₂Te₅ Alloy. Nanomaterials, 2023, 13: 582.

127.P.H. Xu, T. Wei, J. Hu, M. Cheng, W.F. Li, Q.Q. Liu, R.R. Wang, Y. Ling, Y.H. Zheng, Y. Cheng, B. Liu.GeTe/CrSb₂Te superlattice-like thin film for excellent thermal stability and high phase change speed. Journal of Alloys and Compounds, 2023, 942: 169073.

2022年

126.Y. Cheng#, Z.M. Gao#, K.H. Ye, H.W. Park, Y.H. Zheng, Y.Z. Zheng, J.F. Gao, M.H. Park, J.H. Choi, K.H. Xue, C.S. Hwang*, H.B. Lyu*. Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO₂-based ferroelectric thin films. Nature Communications, 2022, 13: 645.

125.Y.H. Zheng#, T.J. Xin#, J. Yang, Y.Z. Zheng, Z.M. Gao, Y.W. Wang, Y.L. Xu, Y. Cheng*, K. Du, D.Q. Su, R.W. Shao, B.X. Zhou, Z. Yuan, Q.L. Zhong, C. Liu, R. Huang, X.D. Tang, C.G. Duan, S.N. Song, Z.T. Song, H.B. Lyu*. In-situ atomic-level observation of reversible first-order transition in Hf_0.5Zr_0.5O₂ ferroelectric film. IEEE International Electron Devices Meeting (IEDM), 2022: 6-3.

124.T.J. Xin#, Y.H. Zheng#, Y. Cheng*, K. Du, Y.W. Wang, Z.M. Gao, D.Q. Su, Y.Z. Zheng, Q.L. Zhong, C. Liu, R. Huang, C.G. Duan, S.N. Song, Z.T. Song, H.B. Lyu*. Atomic visualization of the emergence of orthorhombic phase in Hf_0.5Zr_0.5O₂ ferroelectric film with in-situ rapid thermal annealing.Symposium on VLSI Technology, 2022: T7-4.

123.C. Liu#, Q.Y. Tang#, Y.H. Zheng*, B. Zhang, J. Zhao, W.X. Song, Y. Cheng*, Z.T. Song. The origin of hexagonal phase and its evolution process in Ge₂Sb₂Te₅ alloy. APL Materials, 2022, 10: 021102.

122.刘成，赵进，辛天骄，郑勇辉，宋文雄，成岩. 功能材料与器件学报，2022.

121.许亦琳，辛天骄，郑赟喆，高兆猛，郑勇辉，成岩. 功能材料与器件学报，2022.

120.C. Yoo, J.W. Jeon, S. Yoon, Y. Cheng, G. Han, W. Choi, B. Park, G. Jeon, S. Jeon, W. Kim, Y. Zheng, J. Lee, J. Ahn, S. Cho, S.B. Clendenning, I.V. Karpov, Y.K. Lee, J.H. Choi, C.S. Hwang. Atomic layer deposition of Sb₂Te₃/GeTe superlattice film and its melt-quenching-free phase-transition mechanism for phase-change memory. Advanced Materials, 2022, 2207143.

119.P. Yuan, G.Q. Mao, Y. Cheng, K.H. Xue, Y.Z. Zheng, Y. Yang, P.F. Jiang, Y.N. Xu, Y. Wang, Y.H. Wang, Y.X. Ding, Y.T. Chen, Z.W. Dang, L. Tai, T.C. Gong, Q. Luo, X.S. Miao, Q. Liu. Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics. Nano Research, 2022, 15: 3667-3674.

118.Y. Peng, W.W. Xiao, Y. Liu, C.J. Jin, X.R. Deng, Y.Y. Zhang, F.N. Liu, Y.Z. Zheng, Y. Cheng, B. Chen, X. Yu, Y. Hao, G.Q. Han. HfO₂-ZrO₂ superlattice ferroelectric capacitor with improved endurance performance and higher fatigue recovery capability. IEEE Electron Device Letters, 2022, 43: 216-219.

117.Z. Shen, L. Liao, Y. Zhou, K. Xiong, J.H. Zeng, X.D. Wang, Y. C. J.J. Liu, T.L. Guo, S.K. Zhang, T. Lin, H. Shen, X.J. Meng, Y.W. Wang, Y. Cheng, J. Yang, P. Chen, L.F. Wang, X.D. Bai, J.H. Chu, J.L. Wang. Epitaxial growth and phase evolution of ferroelectric La-doped HfO₂ films. Applied Physics Letters, 2022, 120: 162904.

116.J. Hu, C. Lin, L.Y. Peng, T. Wei, W.F. Li, Y. Ling, Q.Q. Liu, M. Cheng, S.N. Song, Z.T. Song, J. Zhou, Y. Cheng, Y.H. Zheng, Z.M. Sun, B. Liu. Cr-doped Sb2Te materials promising for high performance phase-change random access memory. Journal of Alloys and Compounds, 2022, 908: 164593.

115.C. Lin, J. Hu, T. Wei, W.F. Li, Y. Ling, Q.Q. Liu, M. Cheng, S.N. Song, Z.T. Song, Y. Cheng, Y.H. Zheng, B. Liu. Excellent thermal stability attributed to Cr dopant in Sb2Te phase change material. Materials Letters, 2022, 315: 131977.

114.D.G. Ding, S. Wang, Y.P. Xia, P. Li, D.L. He, J.Q. Zhang, S.W. Zhao, G.H. Yu, Y.H. Zheng, Y. Cheng, M.H. Xie, F. Ding, C.H. Jin. Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au (111) Substrate. ACS Nano, 2022, 16: 17356-17364.

113.F.R. Sui, M. Jin, Y.Y. Zhang, J. Hong, Y. Cheng, R.J. Qi, F.Y. Yue, R. Huang. Atomic insights into the influence of Bi doping on the optical properties of two-dimensional van der Waals layered InSe. Journal of Physics: Condensed Matter, 2022, 34: 224006.

112.Z. Guan, Y.F. Zhao, X.T. Wang, N. Zhong, X. Deng, Y.Z. Zheng, J.J. Wang, D.D. Xu, R.R. Ma, F.Y. Yue, Y. Cheng, R. Huang, P.H. Xiang, Z.M. Wei, J.H. Chu, C.G. Duan. Electric-field-induced room-temperature antiferroelectric–ferroelectric phase transition in Van der Waals layered GeSe. ACS Nano, 2022, 16: 1308-1317.

2021年

111.Y.Z. Zheng#, Y.H. Zheng#, Z.M. Gao, J.H. Yuan, Y. Cheng*, Q.L. Zhong, T.J. Xin, Y.W. Wang, C. Liu, Y.R. Huang, R. Huang, X.S. Miao, K.H. Xue^*, H.B. Lyu^*. Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf_0.5Zr_0.5O₂ films: vacancy generation and lattice dislocation. IEEE International Electron Devices Meeting (IEDM), 2021: 33-5.

110.Y.Z. Zheng#, C.R. Zhong#, Y.H. Zheng, Z.M. Gao, Y. Cheng*, Q.L. Zhong, C. Liu, Y.W. Wang, R.J. Qi, R. Huang, H.B. Lyu^*. In-situ atomic visualization of structural transformation in Hf_0.5Zr_0.5O₂ ferroelectric thin film: from nonpolar tetragonal phase to polar orthorhombic phase. Symposium on VLSI Technology, 2021: T16-3. 

109.Y. Cheng*, Y.H. Zheng, Z. T. Song, Reversible switching in bicontinuous structure for phase change random access memory application. Nanoscale, 2021, 13: 4678-4684.

108.Y.H. Zheng, Z. Chen, H. Lu, Y. Cheng*, X. Chen, Y.B. He*, Z.L. Zhang*. The formation of TiO₂/VO₂ multilayer structure via directional cationic diffusion. Nanoscale, 2021, 13: 7783-7791.

107.Q.L. Zhong, Y.W. Wang, Y. Cheng*, Z.M. Gao, Y.Z. Zheng, T.J. Xin, Y.H. Zheng, R. Huang, H.B. Lyu*. Optimization of the in situ biasing FIB sample preparation for hafnia-based ferroelectric capacitor. Micromachine, 2021, 12: 1436.

106.Z.M. Gao, Y.B. Luo, S.X. Lyu, Y. Cheng, Y.H. Zheng, Q.L. Zhong, W.F. Zhang*, H.B. Lyu*. Identification of ferroelectricity in capacitor with ultra-thin (1.5 nm) Hf_0.5Zr_0.5O₂ film. IEEE Electron Device Letters, 2021, 42: 1301-1306.

105.Z.T. Song, D.L. Cai, Y. Cheng, L. Wang, S.L. Lv, T.J. Xin, G.M. Feng. 12-state multi-level cell storage implemented in a 128 Mb phase change memory chip. Nanoscale, 2021, 13: 10455-10461.

104.T.C. Gong, L. Tao, J.K. Li, Y. Cheng, Y.N. Xu, W. Wei, P.F. Jiang, P. Yuan, Y. Wang, Y.T. Chen, Y.X. Ding, Y. Yang, Y. Wang, B. Chen, Q. Luo, S. S Chung, S.X. Du, M. Liu. 10⁵× Endurance Improvement of FE-HZO by an Innovative Rejuvenation Method for 1z Node NV-DRAM Applications. Symposium on VLSI Technology, 2021: T16-1.

103.M.H. Ao, S.Z. Zheng, Q.L. Zhong, W.D. Zhang, X. Hou, X.J. Chai, C. Wang, H.C. Fan, J.W. Lian, Y. Cheng, J. Wang, J. Jiang, A.Q. Jiang. In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films. ACS Applied Materials Interfaces, 2021, 13: 33291-33299.

102.W.Q. Xu, Y.H. Zheng, Y. Cheng, R.J. Qi*, H. Peng, H.C. Lin, R. Huang*. Understanding the effect of Al doping on the electrochemical performance improvement of the LiMn₂O₄ cathode material. ACS Applied Materials Interfaces, 2021, 13: 45446-45454.

101.C. Li, H.L. Song, Y. Cheng, R.J. Qi, R. Huang, C.Q. Cui, Y.F. Wang, Y. Zhang, L. Miao. Highly Suppressed Thermal Conductivity in Diamond-like Cu₂SnS₃ by Dense Dislocation. ACS Applied Energy Materials, 2021, 4: 8728-8733.

100.W.Q. Xu, Y.H. Zheng, L.N. Lin, W.B. Lei, Z.G. Wang, H.L. Song, Y. Cheng, R.J. Qi, H. Peng, H.C. Lin, Z.Z. Yang, R. Huang. Atomic Insights into Surface Orientations and Oxygen Vacancies in the LiMn₂O₄ Cathode for Lithium Storage. Journal of Alloys and Compounds, 2021, 870: 159387.

99.L.N. Lin, Q.L. Zhong, Y.Z. Zheng, Y. Cheng, R.J. Qi, R. Huang. Size effect of Au nanoparticles in Au-TiO2-x photocatalyst. Chemical Physics Letters, 2021, 770: 138457.

98.Q.L. Zhong, X. Deng, L.N. Lin, H.L. Song, Y.Z. Zheng, Y. Cheng, P.H. Xiang, N. Zhong, R.J. Qi, C.G. Duan, R. Huang. Revealing a high-density three-dimensional Ruddlesden-Popper-type fault network in an SmNiO₃ thin film. Journal of Materials Research, 2021, 36: 1637-1645.

97.W.Q. Xu, H.K. Li, Y.H. Zheng, W.B. Lei, Z.G. Wang, Y. Cheng, R.J. Qi, H. Peng, H.C. Lin, F.Y. Yue, R. Huang. Atomic Insights into Ti Doping on the Stability Enhancement of Truncated Octahedron LiMn₂O₄ Nanoparticles. Nanomaterials, 2021, 11: 508.

2020年

96.Q. Luo#, Y. Cheng#, J.G. Yang, R.R. Cao, H.L. Ma, Y. Yang, R. Huang, W. Wei, Y.H. Zheng, T.C. Gong, J. Yu, X.X. Xu, P. Yuan, X.Y. Li, L. Tai, H.R. Yu, D.S. Shang, Q. Liu, B. Yu, Q.W. Ren, H.B. Lv*, M. Liu*. A highly CMOS compatible hafnia-based ferroelectric diode. Nature Communications, 2020, 11: 1391.

95.W.X. Song#, Y. Cheng#, D.L. Cai, Q.Y. Tang, Z.T. Song*, L.H. Wang, J. Zhao, T.J. Xin, Z. P. Liu. Improving the performance of phase-change memory by grain refinement. Journal of Applied Physics, 2020, 128: 075101.

94.Y. Cheng*, D.L. Cai#, Y.H. Zheng#, S. Yan, L. Wu, C. Li, W.X Song*, T.J. Xin, S.L. Lv, R. Huang, H.B. Lv, Z.T. Song*, S.L. Feng. Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory. ACS Applied Materials & Interfaces, 2020, 12: 23051-23059.

93.C.R. Zhong#, R.J. Qi#, Y.H. Zheng, Y. Cheng*, W.X. Song*, R. Huang. The Relationships of Microscopic Evolution to Resistivity Variation of a FIB-Deposited Platinum Interconnector. Micromachines, 2020, 11: 588.

92.Q.Y. Tang#, T.Z. He#, K. Yu, Y. Cheng*, R.J. Qi*, R. Huang, J. Zhao, W.X. Song, Z.T. Song. The effect of thickness on texture of Ge₂Sb₂Te₅ phase-change films. Journal of Materials Science: Materials in Electronics, 2020, 31:5848-5853.

91.Y.H. Zheng#, R.J. Qi#, Y. Cheng*, Z.T. Song. The crystallization mechanism of Zirconium doped Sb₂Te₃ material for phase change random-access memory application.Journal of Materials Science: Materials in Electronics, 2020, 31:5861-5865.

90.R.J. Qi#, Y. Cheng*. Synthesis of Se nanowires at room temperature using selenourea as Se source. Journal of Materials Science: Materials in Electronic, 2020, 31: 5843-5847.

89.Y. Xue, Y. Cheng, Y.H. Zheng, S. Yan, W.X. Song, S.L. Lv, S.N. Song*, Z.T. Song*. Phase change memory based on Ta-Sb-Te alloy-towards a universal memory. Materials Today Physics, 2020, 15: 100266.

88.H.L. Song, C. Li, C.-K. Wang, J.-C. Yang, J.J. Lin, L. Sun, Y. Cheng, R.J. Qi, R. Huang, Y.-H. Chu, C.-G. Duan. Revealing a metastable cubic phase in CoFe₂O₄–SrTiO₃ three-dimensional network heteroepitaxial nanostructure. Journal of Applied Physics, 2020, 128: 225303.

87.L.N. Lin, X.Y. Feng, D.P. Lan, Y. Chen, Q.L. Zhong, C. Liu, Y. Cheng, R.J. Qi, J.P. Ge, C.Z. Yu, C.-G. Duan, R. Huang. Coupling Effect of Au Nanoparticles with the Oxygen Vacancies of TiO_2-x for Enhanced Charge Transfer. Journal of Physical Chemistry C, 2020, 124: 23823-23831.

86.C. Liu#, J. Wang#, J.J. Wan*, Y. Cheng, R. Huang, C.Q. Zhang, W.L. Hu, G.F. Wei*, C.Z. Yu*. Amorphous Metal–Organic Framework‐Dominated Nanocomposites with Both Compositional and Structural Heterogeneity for Oxygen Evolution.Angewandte Chemie-International Edition, 2020, 59: 3630-3637.

2019年

85.Y.H. Zheng, Y. Wang, T.J. Xin, Y. Cheng*, R. Huang, P. Liu, M. Luo, Z.L. Zhang, S.L. Lv, Z.T. Song*, S.L. Feng. Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge₂Sb₂Te₅. Communications Chemistry, 2019, 2: 13.

84.K. Ren*, Y. Cheng*, M.J. Xia, S.L. Lv, Z.T. Song. In-situ observation of Ge₂Sb₂Te₅ crystallization at the passivated interface. Ceramics International, 2019, 45: 19542-19546.

83.Q. Luo, J. Yu, X.M. Zhang, K.H. Xue, J.H. Yuan, Y. Cheng, T.C. Gong, H.B. Lv*, X.X. Xu, P. Yuan, J.H. Yin, L. Tai, S.B. Long, Q. Liu, X.S. Miao, J. Li, M. Liu*. Nb_1-xO₂ based universal selector with ultra-high endurance (>10¹²), high speed (10ns) and excellent V_th stability, 2019 Symposium on VLSI Technology, 2019, T236-T237.

82.W.X. Zhang, H. Song, Y. Cheng, C. Liu, C.H. Wang, M.A.N. Khan, H. Zhang, J.Z. Liu, C.Z. Yu*, L.J. Wang, J.S. Li*. Core–Shell Prussian Blue Analogs with Compositional Heterogeneity and Open Cages for Oxygen Evolution Reaction. Advanced Science. 2019, 6: 1801901.

81.X. Chen, X.Q. Liu*, Y. Cheng, Z.T. Song*. The impact of vacancies on the stability of cubic phases in Sb-Te binary compounds. NPG Asia Materials, 2019, 11: 40.

80.Y. Wang, T.Q. Guo, G.Y. Liu, T. Li, S.L. Lv, S.N. Song, Y. Cheng, W.X. Song, K. Ren, Z.T. Song*. Sc-Centered Octahedron Enables High-Speed Phase Change Memory with Improved Data Retention and Reduced Power-Consumption. ACS Applied Materials & Interfaces, 2019, 11: 10848-10855.

79.L.N Lin, Y.L. Ma, J.B. Wu*, F. Pang, J.P. Ge*, S. Sui, Y.F. Yao, R.J. Qi, Y. Cheng, C.G. Duan, J.H. Chu, R. Huang*, Origin of Photocatalytic Activity in Ti⁴⁺/Ti³⁺ Core–Shell Titanium Oxide Nanocrystals. Journal of Physical Chemistry C, 2019, 123, 34: 20949.

78.C.R. Zhong, L.N. Lin, R.J. Qi, Y. Cheng, X.S. Gao, R. Huang*. Plan-view Sample Preparation of a Buried Nanodots Array by FIB with Accurate EDS Positioning in Thickness Direction. Ultramicroscopy, 2019, 207: 112840.

77.M.X. Jia, Z.Q. Ren, Y.D. Liu, Y. Cheng, R. Huang, P.H. Xiang, X.D. Tang, B.B. Tian, N. Zhong*, C.G. Duan. Ferroelectric polarization-controlled resistive switching in BaTiO₃/SmNiO₃ epitaxial heterostructures. Applied Physics Letters, 2019, 114: 102901.

76.Y. Wang, T.B. Wang, G.Y. Liu, T.Q. Guo, T. Li, S.L. Lv, Y. Cheng, S.N. Song, K. Ren, Z.T. Song*. High thermal stability and fast speed phase change memory by optimizing GeSbTe with Scandium doping. Scripta Materialia, 2019, 164: 25-29.

2018年

75.X. Chen, Y.H. Zheng, M. Zhu, K. Ren, Y. Wang, T. Li, G.Y. Liu, T.Q. Guo, L. Wu, X.Q. Liu, Y. Cheng*, Z.T. Song. Scandium doping brings speed improvement in Sb₂Te alloy for phase change random access memory application. Scientific Reports, 2018, 8: 6839.

74.Q. Luo, T.C. Gong, Y. Cheng, Q.Z. Zhang, H.R. Yu, J. Yu, H.L. Ma, X.X. Xu, K.L. Huang, X. Zhu, D.N. Dong, J.H. Yin, P. Yuan, L. Tai, J.F. Gao, J.F. Li, H.X. Yin, S.B. Long, Q. Liu, H.B. Lv*, M. Liu^*, Hybrid 1T e-DRAM and e-NVM realized in one 10 nm node Ferro FinFET device with charge trapping and domain switching effects. IEEE International Electron Devices Meeting (IEDM), 2018.

73.C. Li, H.L. Song, Y.W. Shen, Y.F. Wang, Y. Cheng, R.J. Qi, S.Y. Chen, C.G. Duan, R. Huang. Evolution of cation ordering and crystal defects controlled by Zn substitutions in Cu₂SnS₃ ceramics, AIP Advances, 2018, 8: 105322.

72.C. Li, Y.W. Shen, H.L. Song, Y.F. Wang, S.Y. Chen, R.J. Qi, Y. Cheng, C.G. Duan, R. Huang. Microstructure of Cu₂S nanoprecipitates and its effect on electrical and thermal properties in thermoelectric Cu₂Zn_0.2Sn_0.8S₃ ceramics. AIP Advances, 2018, 8: 085105.

71.T.Q. Guo, S.N. Song, Z.T. Song, X.L. Ji, Y. Xue, L.L. Chen, Y. Cheng, B. Liu, L.C. Wu, M. Qi, S.L. Feng. SiC-Doped Ge₂Sb₂Te₅ Phase-Change Material: A Candidate for High-Density Embedded Memory Application. Advanced Electronic Materials, 2018, 4: 1800083.

70.Y. Wang, Y.H. Zheng, G.Y. Liu, T. Li, T.Q. Guo, Y. Cheng, S.L. Lv, S.N. Song, K. Ren^*, Z.T. Song^*. Scandium doped Ge₂Sb₂Te₅ for high-speed and low-power-consumption phase change memory. Applied Physics Letters, 2018, 112: 133104.

69.Y. Wang, T.B. Wang, Y.H. Zheng, G.Y. Liu, T. Li, S.L. Lv, W.X. Song, S.N. Song, Y. Cheng, K. Ren^*, Z.T. Song, Atomic scale insight into the effects of Aluminum doped Sb₂Te for phase change memory application. Scientific Reports, 2018, 8: 15136.

2017年

68.Y.H. Zheng, Y. Cheng*, R. Huang, R.J. Qi, F. Rao*, K.Y. Ding, W.J. Yin, S.S. Song, W.L. Liu, Z.T. Song, S.L. Feng. Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge₂Sb₂Te₅ Thin Film. Scientific Reports, 2017, 7: 5915.

67.K. Ren, Y. Cheng*, X. Chen, K.Y. Ding, S.L. Lv, W.J. Yin, X.H. Guo, Z.G. Ji, Z.T. Song*. Carbon layer application in phase change memory to reduce power consumption and atomic migration. Materials Letters, 2017, 206: 52-55.

66.L. Zhang, S.N. Song, H. Lin, Y. Cheng, W. Xi, L. Li, Y. He, Z.T. Song. Local structure characteristics of Sb₂Te₃ films studied by reverse Monto Carlo modeling. Nuclear Science and Techniques, 2017, 28: 38.

65.L.L. Shen, S.N. Song, Z.T. Song, L. Li, T.Q. Guo, Y. Cheng, L.C. Wu, B. Liu, S.L. Feng. Properties of Ti-Sb-Te doped with SbSe alloy for application in nonvolatile phase change memory. Journal of Materials Science: Materials in Electronics, 2017, 28: 923-927.

64.Y. Liu, H. Wang, B. Liu, Y. Cheng, S.N. Song, L.C. Wu, D. Zhou, Z.T. Song. Trapping analysis and countermeasure for arsenic auto-doping in 40-nm epitaxial diode arrays and CMOS integration. Materials Science in Semiconductor Processing, 2017, 71: 326-331.

63.G.Y. Liu, L.C. Wu, M. Zhu, Z.T. Song, F. Rao, S.N. Song, Y. Cheng. The investigations of characteristics of Sb₂Te as a base phase-change material. Solid-State Electronics, 2017, 135: 31-36.

62.G.Y. Liu, L.C. Wu, Z.T. Song, F. Rao, S.N. Song, Y. Cheng. Stability of Sb₂Te Crystalline Films for Phase Change Memory. Materials Science Forum, 2017, 898: 1829-1833.

2016年

61.Y.H. Zheng, M.J. Xia, Y. Cheng*, F. Rao*, K.Y. Ding, W.L. Liu, J. Yu, Z.T. Song, S.L. Feng. Direct observation of metastable face-centered cubic Sb₂Te₃ crystal. Nano Research, 2016, 11: 3453-3462.

60.Y.H. Zheng, Y. Cheng*, M. Zhu, X.L. Ji, Q. Wang, S.N. Song, Z.T. Song, W.L. Liu, S.L. Feng. A candidate Zr-doped Sb₂Te alloy for phase change memory application. Applied Physics Letters, 2016, 108: 052107.

59.Y.H. Zheng, Y. Cheng*, Z.T. Song, W.J. Yin, M. Zhu, W.L. Liu, S.N. Song, S.L. Feng. Self-precipitated process of Te nanowire from Zr-doped Sb₂Te₃ film. Materials Science Forum, 2016, 848: 489.

58.L.L. Shen, S.N. Song, Z.T. Song, L. Li, T.Q. Guo, Y. Cheng, S.L. Lv, L.C. Wu, B. Liu, S.L. Feng. Surface etching mechanism of carbon-doped Ge₂Sb₂Te₅ phase change material in fluorocarbon plasma. Applied Physics A-Materials Science & Processing, 2016, 122: 1-6.

57.K.Y. Ding, F. Rao*, S.L. Lv, Y. Cheng, W.L. Liu, Z.T. Song. Low-energy amorphization of Ti₁Sb₂Te₅ phase change alloy induced by TiTe₂ nano-lamellae. Scientific Reports, 2016, 6: 30645.

56.S.N. Song, L.L Shen, Z.T. Song, D.N. Yao, T.Q. Guo; L. Li, B. Liu, L.C. Wu, Y. Cheng, Y.Q. Ding, S.L. Feng. Phase change properties of Ti-Sb-Te thin films deposited by thermal atomic layer deposition. 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, 9818: 98180N.

55.L.L. Shen, S.N. Song, Z.T. Song, L. Li, T.Q. Guo, B. Liu, L.C. Wu, Y. Cheng, S.L. Feng. Reactive ion etching effects on carbon-doped Ge₂Sb₂Te₅ phase change material in CF₄/Ar plasma. 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, 9818: 98180M.

54.Y.J. Chen, B. Zhang, Q.Q. Ding, Q.S. Deng, Y. Cheng, Z.T. Song, J.X. Li, Z. Zhang, X.D. Han. Microstructure evolution of the phase change material TiSbTe. 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, 9818: 98180B.

53.Q. Wang, B. Liu, Y.Y. Xia, Y.H. Zheng, S.N. Song, Y. Cheng, Z.T. Song, S.L. Feng. Electrical properties of Cr-doped Sb₂Te₃ phase change material. 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, 9818: 98180H.

52.Z.H. Zhang, S.N. Song, Z.T. Song, L. Li, L.L. Shen, T.Q. Guo, Y. Cheng, S.L. Lv, L.C. Wu, B. Liu, S.L. Feng. Performance Improvement of Phase Change Memory Cell by using a Tantalum Pentoxide Buffer Layer. Materials Science Forum, 2016, 848: 425-429.

51.L.L. Cao, L.C. Wu, Z.T. Song, W.Q. Zhu, Y.H. Zheng, Y. Cheng, S.N. Song, Z.Y. Ma, L. Xu. Investigation of Ni doped Ge-Te materials for high temperature phase change memory applications. Materials Science Forum, 2016, 848: 460-465.

50.Y.H. Zheng, Y. Cheng, Z.T. Song, W.J. Yin, M. Zhu, W.L. Liu, S.N. Song, S.L. Feng. Self-precipitated Process of Te Nanowire from Zr-doped Sb2Te3 Film. Materials Science Forum, 2016, 848: 489-493.

2015年

49.Y. Cheng, S.N. Song, Z.H. Zhang, Z.T. Song, B. Liu, S.L. Feng, Z. Zhang, Electron beam annealing for component optimization in Si-Sb-Te material. Materials Science Forum, 2015, 815: 44-48.

48.F. Rao, Z.T. Song, Y. Cheng, X.S. Liu, M.J. Xia, W. Li, K.Y. Ding, X.F. Feng, M. Zhu, S.L. Feng, Direct observation of titanium-centered octahedral in titanium–antimony–tellurium phase-change material. Nature communications, 2015, 6:10040.

47.M. Zhu, M.J. Xia, Z.T. Song, Y. Cheng, L.C. Wu, F. Rao, S.N. Song, M. Wang, Y.G. Lv, S.L. Feng, Understanding the crystallization behavior of as-deposited Ti–Sb–Te alloys through real-time radial distribution functions. Nanoscale, 2015, 7: 9935-9944.

46.M.J. Xia, M. Zhu, Y.C. Wang, Z.T. Song, F. Rao, L.C. Wu, Y. Cheng, S.N. Song, Ti−Sb−Te alloy: a candidate for fast and long-life phase-change memory. ACS Applied Materials & Interfaces, 2015, 7: 7627-7634.

45.L. Li, S.N. Song, Z.H. Zhang, Z.T. Song, Y. Cheng, S.L. Lv, L.C. Wu, B. Liu, S.L. Feng, Investigation of Cr_0.06(Sb₄Te)_0.94 alloy for high-speed and high data-retention phase change random access memory applications. Applied Physics A, 2015, 120: 537.

44.L.L. Shen, S.N. Song, Z.H. Zhang, Z.T. Song, Y. Cheng, Y.Q. Zhu, X.H. Guo, W.J. Yin, D.N. Yao, B. Liu, S.L. Feng, Characteristics and mechanism of phase change material W_0.03Sb₂Te etched by Cl₂/BCl₃ inductively coupled plasmas. Thin Solid Films, 2015, 593: 67-70.

43.L. Li, S.N. Song, Z.H. Zhang, Y.Q. Zhu, Z.T. Song, Y. Cheng, S.L. Lv, B. Liu, L.L. Chen, Thickness dependent nano-crystallization in Ti_0.43Sb₂Te₃ films and its effect on devices. Thin Solid Films, 2015, 590: 13-16.

42.Q. Wang, B. Liu, Y.Y. Xia, Y.H. Zheng, R.R. Huo, Q. Zhang, S.N. Song, Y. Cheng, Z.T. Song, Cr-doped Ge₂Sb₂Te₅ for ultra-long data retention phase change memory. Applied Physics Letters, 2015, 107: 222101.

41.Q. Wang, B. Liu, Y.Y. Xia, Y.H. Zheng, R.R. Huo, M. Zhu, S.N. Song, S.L. Lv, Y. Cheng, Z.T. Song, S.L. Feng, Characterization of Cr-doped Sb₂Te₃ films and their application to phase-change memory. physica status solidi (RRL) - Rapid Research Letters, 2015, 9: 470-474.

40.S.N. Song, D.N. Yao, Z.T. Song, L.N. Gao, Z.H. Zhang, L. Li, L.L. Shen, L.C. Wu, B. Liu, Y. Cheng, S.L. Feng, Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon. Nanoscale Research Letters, 2015, 10:89.

2014年

39.宋志棠，成岩，相变存储器及其发展。《功能材料信息》，2014年第5期。

38.Y.C. Wang, X.G. Chen, Y. Cheng, X.L. Zhou, S.L. Lv, Y.F. Chen, Y.Q. Wang, M. Zhou, H.P. Chen, Y.Y. Zhang, Z.T. Song, G.M. Feng, RESET Distribution Improvement of Phase Change Memory: The Impact of Pre-Programming. IEEE Electron Device Letters, 2014, 35: 536-538.

37.Y.C. Wang, Y.F. Chen, D.L. Cai, Y. Cheng, X.G. Chen, Y.Q. Wang, M.J. Xia, M. Zhou, G.Z. Li, Y.Y. Zhang, D. Gao, Z.T. Song, G.M. Feng, Understanding the early cycling evolution behaviors for phase change memory application. Journal of Applied Physics, 2014, 116: 204503.

36.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, C. Peng, L. Zhang, D.C. Cao, X.H. Guo, W.J. Yin, L.C. Wu, B. Liu, Characteristics and mechanism of Al_1.3Sb₃Te etched by Cl₂/BCl₃ inductively coupled plasmas. Microelectronic Engineering, 2014, 115: 51-54.

35.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, M. Zhu, X.Y. Li, Y.Q. Zhu, X.H. Guo, W.J. Yin, L.C. Wu, B. Liu, S.L. Feng, D. Zhou, Etching of new phase change material Ti_0.5Sb₂Te₃ by Cl₂/Ar and CF₄/Ar inductively coupled plasmas.Applied Surface Science, 2014, 311: 68-73.

34.Z.H. Zhang, Y.F. Gu, S.N. Song, Z.T. Song, Y. Cheng, B. Liu, Y.Q. Zhu, D. Zhou, S.L. Feng, Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application. Journal of Applied Physics, 2014, 116: 074304.

33.X.P. Wang, N.K. Chen, X.B. Li,* Y. Cheng, X.Q. Liu, M.J. Xia, Z.T. Song, X.D. Han, S.B. Zhang*, H.B. Sun*, Role of the nano amorphous interface in the crystallization of Sb₂Te₃ towards non-volatile phase change memory: insights from first principles. Physical Chemistry Chemical Physics, 2014, 16: 10810.

2013年

32.Y. Cheng, Y.F. Gu, Z.T. Song, S.N. Song, F. Rao, L.C. Wu, B. Liu, S.L. Feng, Investigation of Sb-rich Sb-Te binary films used as phase change material. In 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, Proceedings of SPIE, 2013, 8782: 87820H.

31.Y.G. Lu, S.N. Song, Z.T. Song, Y. Cheng, L.C. Wu, B. Liu, Crystallization behavior of Ge₂Te₃-TiO₂ film for phase-change random access memory application, In 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, Proceedings of SPIE, 2013, 8782: 87820K.

30.Z.H. Zhang, C. Peng, S.N. Song, Z.T. Song, Y. Cheng, K. Ren, X.Y. Li, F. Rao, B. Liu, S.L. Feng. Characterization of Cu doping on GeTe for phase change memory application. Journal of Applied Physics, 2013, 114: 244311.

29.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, F. Rao, L.C. Wu, B. Liu, B. Chen, Y.G. Lu, Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application. Applied Physics Letters, 2013, 103: 142112.

28.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, Y.F. Gu, B. Chen, Characterization of the thermal properties for Si-implanted Sb₂Te₃ phase change material. Applied Physics Letters, 2013, 102: 252106.

27.Y.F. Gu, S.N. Song, Z.T. Song, B.S. Yuan, Y. Cheng, Z.H. Zhang, B. Liu, S.L. Feng, Phase-change material Ge_0.61Sb₂Te for application in high-speed phase change random access memory, Applied Physics Letters, 2013, 102: 103110.

26.C. Peng, L.C. Wu, F. Rao, Z.T. Song, S.L. Lv, X.L. Zhou, X.F. Du, Y. Cheng, P.X. Yang, J.H. Chu, A simple method used to evaluate phase-change materials based on focused-ion beam technique. Applied Physics Letters, 2013, 102: 203510.

25.X.L. Zhou, L.C. Wu, Z.T. Song, Y. Cheng, F. Rao, K. Ren, S.N. Song, B. Liu, S.L. Feng, Nitrogen-doped Sb-rich Si-Sb-Te phase-change material for high performance phase-change memory. Acta Materialia, 2013, 61: 7324-7333.

24.M. Zhu, L.C. Wu, F. Rao, Z.T. Song, X.L. Ji, D.N. Yao, Y. Cheng, S.L. Lv, S.N. Song, B. Liu, L. Xu, The effect of Titanium doping on the structure and phase change characteristics of Sb₄Te.Journal of Applied Physics, 2013, 114: 124302.

23.Y.F. Gu, S.N. Song, Z.T. Song, Y. Cheng, X.Y. Liu, X.F. Du, B. Liu, S.L. Feng, Reactive ion etching of Si_xSb₂Te in CF₄/Ar plasma for nonvolatile phase-change memory device. Journal of Nanoscience and Nanotechnology, 2013, 13: 1594-1597.

22.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, Y.F. Gu, L.C. Wu, B. Liu, S.L. Feng, Study on GeGaSbTe film for long data retention phase change memory application. Journal of Non Crystalline Solids, 2013, 381: 54.

2012年

21.N. Yan, Y. Cheng, X.Q. Liu, Z.T. Song, Z. Zhang, In situ transmission electron microscopy investigation of Si_xSb_100-x phase-change materials.Materials Letters, 2012, 84: 20-23.

20.F. Rao, Z.T. Song, Y. Cheng, M.J. Xia, K. Ren, L.C. Wu, B. Liu, S.L. Feng, Investigation of changes in band gap and density of localized states on phase transition for Ge₂Sb₂Te₅ and Si_3.5Sb₂Te₃ materials. Acta Materialia, 2012, 60: 323-328.

19.K. Ren, F. Rao, Z.T. Song, S.L. Lv, Y. Cheng, L.C. Wu, C. Peng, X.L. Zhou, M.J. Xia, B. Liu, S.L. Feng, Pseudobinary Al₂Te₃-Sb₂Te₃ material for high speed phase change memory application. Applied Physics Letters, 2012, 100: 052105.

18.Y.F. Gu, S.N. Song, Z.T. Song, Y. Cheng, X.F. Du, B. Liu, S.L. Feng, Si_xSb₂Te materials with stable phase for phase change random access memory applications.Journal of Applied Physics, 2012, 111: 054319.

17.L. Zhang, L.X. Gu, X.D. Han, H. Huang, Y.N. Dai, Y. Cheng, Y. Wang, Z. Zhang, Y.Q. Wu, B. Liu, Z.T. Song, The influence of sputtering power on phase-change films. Electrochemical and Solid-State Letters, 2012, 15: H205.

16.Y.G. Lu, S.N. Song, Z.T. Song, W.C Ren, Y.L. Xiong, F. Rao, L.C. Wu, Y. Cheng, B. Liu, Superlattice-like GaSb/Sb₂Te₃ films for low-power phase change memory. Scripta Materialia, 2012, 66: 702-705.

15.X. Zhang, F. Rao, B. Liu, C. Peng, X.L. Zhou, D.N. Yao, X.H. Guo, S.N Song, S.N. Song, L.Y. Wang, Y. Cheng, L.C. Wu, Z.T. Song, S.L. Feng. Dry etching of new phase-change material Al_1.3Sb₃Te in CF₄/Ar plasma, Journal of Semiconductors, 2012, 33: 102003.

14.X. Zhang, B. Liu, C. Peng, F. Rao, X.L. Zhou, S.N. Song, L.Y. Wang, Y. Cheng, L.C. Wu, D.N. Yao, Z.T. Song, S.L. Feng. Germanium Nitride as a buffer layer for phase change memory, Chinese Physics Letters, 2012, 29: 107201.

2011年

13.Y. Cheng, Z.T. Song, Y.F. Gu, S.N. Song, F. Rao, L.C. Wu, B. Liu, S.L Feng, Influence of silicon on the thermally induced crystallization process of Si-Sb₄Te phase change materials. Applied Physics Letters, 2011, 99: 261914.

12.X.L. Zhou, L.C. Wu, Z.T. Song, F. Rao, Y. Cheng, C. Peng, D.N. Yao, S.N. Song, B. Liu, S.L. Feng, B. Chen, Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state. Applied Physics Letters, 2011, 99: 032105.

11.F. Rao, Z.T. Song, K. Ren, X.L. Zhou, Y. Cheng, L.C. Wu, B. Liu, Si-Sb-Te materials for phase change memory applications. Nanotechnology, 2011, 22: 145702.

10.T. Zhang, Z.T. Song, Y.F. Gu, Y. Cheng, B. Liu, S.L. Feng, Mechanism of oxidation on Si₂Sb₂Te₅ phase change material and its application. Japanese Journal of Applied Physics, 2011, 50: 020202.

9.Y.F. Gu, Y. Cheng, S.N. Song, T. Zhang, Z.T. Song, Y.X. Liu, X.F. Du, B. Liu, S.L Feng, Advantages of Si_xSb₂Te phase-change material and its applications in phase-change random access memory. Scripta Materialia, 2011, 65: 622-625.

8.K. Ren, F. Rao, Z.T. Song, Y. Cheng, L.C. Wu, X.L. Zhou, Y.F. Gong, M.J. Xia, B. Liu, S.L. Feng, Study on the crystallization behaviors of Si₂Sb₂Te_x materials. Scripta Materialia, 2011, 64: 685-688.

7.L.C. Wu, X.L. Zhou, Z.T. Song, M. Zhu, Y. Cheng, F. Rao, S.N. Song, B. Liu, S.L. Feng. Sb-rich Si-Sb-Te phase-change material for phase-change random access memory applications, IEEE Transactions on Electron Devices. 2011, 58: 4423-4426.

6.Y.G. Lu, S.N. Song, Z.T. Song, W.C. Ren, Y. Cheng, B. Liu, Crystallization process of amorphous GaSb₅Te₄ film for high-speed phase change memory. Applied Physics Express, 2011, 4: 094102.

5.Y.G. Lu, S.N. Song, Z.T. Song, W.C. Ren, C. Peng, Y. Cheng, B. Liu. Investigation of HfO₂ doping on GeTe for phase change memory. Solid State Sciences, 2011, 13: 1943-1947.

4.X.L. Zhou, L.C. Wu, Z.T. Song, F. Rao, K. Ren, Y. Cheng, B. Liu, D.N. Yao, S.L. Feng, B. Chen. Investigation on Phase Change Behaviors of Si-Sb-Te Alloy: The Effect of Tellurium Segregation. MRS Online Proceeding Library (OPL), 2011, 1337.

2010年之前

3.Y. Cheng, N. Yan, X.D. Han, Z. Zhang, T. Zhang, Z.T. Song, B. Liu, S.L. Feng, Thermally induced phase separation of Si-Sb-Te alloy. Journal of Non-Crystalline Solids, 2010, 356: 884-888.

2.Y. Cheng, X.D. Han, X.Q. Liu, K. Zheng, Z. Zhang, T. Zhang, Z.T. Song, B. Liu, S.L Feng. Self- extrusion of Te-nanowire from Si-Sb-Te thin films. Applied Physics Letters, 2008, 93: 183113.

1.T. Zhang, Y. Cheng, Z.T. Song, B. Liu, S.L Feng, X.D. Han, Z. Zhang, B. Chen. Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process. Scripta Materialia, 2008, 58: 977-980.