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陈晔

教授教授

物理与电子科学学院      

个人资料

  • 部门: 物理与电子科学学院
  • 毕业院校: 中科院半导体研究所
  • 学位: 博士
  • 学历: 研究生
  • 邮编: 200241
  • 联系电话: 13651659022
  • 传真:
  • 电子邮箱: ychen@ee.ecnu.edu.cn
  • 办公地址: 闵行校区,信息楼347室
  • 通讯地址: 上海市闵行区东川路500号华东师范大学信息楼347,邮编:200241

教育经历

工作经历

个人简介

        1994年于浙江师范大学获得理学学士学位;1997年于武汉大学获得理学硕士学位;2000年毕业于中国科学院半导体研究所,获理学博士学位。博士毕业后先后在法国Grenoble强磁场实验室,日本筑波大学,加拿大Dalhousie University,美国City college of New York进行博士后访学研究。2007年回国后到中科院苏州纳米技术与纳米仿生研究所工作,2009年底入职华东师范大学。长期从事低维半导体材料、新型太阳电池器件等的光电性质研究。利用稳态和时间分辨光谱、磁光光谱等技术开展低维半导体结构的载流子和自旋动力学、及光学自旋量子调控研究。主持或参与多项国家自然科学基金项目。已在 APLPRB等国内外学术期刊上发表学术论文50余篇。


社会兼职

研究方向

1、低维半导体材料的载流子和自旋动力学

2、新型太阳电池材料和器件

3、固体缺陷色心的光量子调控


开授课程

本科生课程:

1. 电磁场与电磁波

研究生课程:

1. 高等半导体物理

2. 半导体光电子学

3. 激光器与激光技术


科研项目

1. 主持国家自然科学基金面上项目,61874045,铜锌锡硫硒薄膜太阳电池的微区缺陷与超快载流子动力学研究,2019/1-2022/12

2. 参与国家重点研发计划,2016YFB0501604,激光稳频技术和高密度原子自旋体系的制备,2016/6-2020/12

3. 参与国家自然科学基金重大仪器专项,61227902,基于原子自旋效应的超高灵敏磁场和惯性测量实验研究装置, 2013/1-2018/12

4. 主持国家自然科学基金面上项目,10874127,基于纳米结构的新型太阳电池的载流子动力学研究, 2009/1-2011/12

学术成果

[1]   Yulin Liu, Bin Xu, Xiaoshuang Lu, Xiatong Qin, Pingxiong Yang, Junhao Chu, Ye Chen⁎, Lin Sun⁎, Improvement of grain growth and composition distribution of Cu2ZnSn(S,Se)4 by using chloride-based precursor solution, Solar Energy, 2021, 215: 451-458.

[2]   Xiaoshuang Lu, Bin Xu, Chuanhe Ma, Ye Chen, Pingxiong Yang, Junhao Chu, Lin Sun,⁎, Improving the efficiency of Cu2ZnSnS4 solar cells by promoting the homogeneous distribution of Sn element, Applied Surface Science 529 (2020) 147160.

[3]   Xiaoshuang Lu, Bin Xu, Chuanhe Ma, Ye Chen, Pingxiong Yang, Junhao Chu, Lin Sun,⁎, Mechanism on the modified sulfurization process for growing large-grained Cu2ZnSnS4 thinfilms, Solar Energy 196 (2020) 597–606

[4]  Bin Xu, Chuanhe Ma, Xiaoshuang Lu, Yulin Liu, Qiao Zhang, Ye Chen, Pingxiong Yang, Junhao Chu, Lin Sun,* , Beyond 10% efficient Cu2ZnSn(S,Se)4 solar cells: Effects of the introduction of SnS powder during selenization process, Solar Energy Materials & Solar Cells 210(2020)110522.

[5]   BinXu, Xiaoshuang Lu, Chuanhe Ma, YulinLiu, Ruijuan Qi, Rong Huang, Ye Chen, Pingxiong Yang, Junhao Chu, and Lin SunMoO2 Sacrificial Layer for Optimizing Back Contact Interface of Cu2ZnSn(S,Se)4 Solar CellsIEEE JOURNAL OF PHOTOVOLTAICS, VOL.10, NO.4, JULY 2020

[6]   Ru-Ru Ma, Dong-Dong Xu, Zhao Guan, Xing Deng, Fangyu Yue, Rong Huang, Ye Chen, Ni Zhong, Ping-Hua Xiang, and Chun-Gang Duan, High-speed ultraviolet photodetectors basedon 2D layered CuInP2S6 nanoflakes, Appl. Phys. Lett. 117, 131102 (2020)

[7]   Chuanhe Ma, Xiaoshuang Lu, Bin Xu,Fei Zhao, Xueer An, Bo Li, Fangyu Yue, Jinchun Jiang, Ye Chen*Lin Sun*and Junhao Chu. Effect of CZTS/CdS interfaces deposited with sputtering and CBD methods on Voc deficit and efficiency of CZTS solar cells. Journal of Alloys and Compounds 817: 153329 (2020).

[8]  Bin Xu, Chuanhe Ma, Xiaoshuang Lu, Yulin Liu, Qiao Zhang, Ye Chen, Pingxiong Yang, Junhao Chu, Lin Sun*. Beyond 10% efficient Cu2ZnSn(S,Se)4 solar cells: Effects of the introduction of SnS powder during selenization process. Solar Energy Materials and Solar Cells 210: 110522 (2020).

[9]  Xuee An, Chuanhe Ma, Jing Hong, Xinhe Zheng*, Bo Li, Lin Sun, Fangyu Yue*, and Ye Chen*, Carrier Transfer of Deep Level Localized States in Type-II InxGa1-xAs/GaNyAs1-y Short Period Superlattice. Phys. Status Solidi B 257, 1900258 (2020).

[10] Xuee An, Zhengjun Shang, Chuanhe Ma, Xinhe Zheng*, Bo Li, Lin Sun, Fangyu Yue*, and Ye Chen*, Field dependent ultrafast carrier dynamics in InGaN/GaN p-i(MQW)-n structure, Superlattices and Microstructures 137: 106354 (2020).

[11] MA Su-Yu, MA Chuan-He, LU Xiao-Shuang, LI Guo-Shuai, SUN Lin, CHEN Ye*, YUE Fang-Yu*, CHU Jun-Hao, (2020).  Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4. J. Infrared Millim. Waves, Vol. 39No. 1, pp:92-98. 

[12] Chuanhe Ma, Xiaoshuang Lu, Bin Xu, Fei Zhao, Xueer An, Bo Li, Lin Sun, Jinchun Jiang*, Ye Chen*, Junhao Chu, Effects of sputtering parameters on photoelectric properties of AZO film for CZTS solar cell, Journal of Alloys and Compounds, 774. 201 (2019)

[13] Xuee An, Zhengjun Shang, Chuanhe Ma, Xinhe Zheng, Cuiling Zhang, Lin Sun, Fangyu Yue, Bo Li*, and Ye Chen**, Temperature and excitation dependence of stimulated emission and spontaneous emission in InGaN epilayer, Chin. Phys. B. 28. 057802 (2019) 

[14] Jun He, Xiaoshuang Lu, Xinran Li, Yuchen Dong, Fangyu Yue, Ye Chen*, Lin Sun*, Compositional dependence of photovoltaic properties of Cu2ZnSnSe4 thin film solar cell: Experiment and simulation, Pingxiong Yang, Junhao Chu, Solar Energy 159. 572578 (2018)

[15] G.D. Cheng, Y.G. Zhang, L. Yan*, H.F. Huang, Q. Huang, Y.X. Song, Y. Chen*, Z. Tang, A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application, Computational Materials Science, 129. 247–251 (2017)

[16] G.D. Cheng, L.Yan and Y. Chen*, Divalent nickel doped cubic magnesium oxide for spin qubit application, Journal of Materials Science, Vol 52138200 (2017)

[17] Jun He, Lin Sun, Ye Chen, Jinchun Jiang, Pingxiong Yang, Junhao Chu, “Influence of sulfurization pressure on Cu2ZnSnS4 thin films and solar cells prepared by sulfurization of metallic precursors”, Journal of Power Sources, 273, 600 (2015)

[18] Z. J. Shang, X. H. Zheng*, C. Yang, Y. Chen*, B. Li, L. Sun, Z. Tang, and D. G. Zhao, “Carrier thermalization under stimu lated emission in In0.17Ga0.83N epilayer at room temperature” Appl. Phys. Lett. 105, 232104 (2014)

[19] Jun He, Lin Sun, Ye Chen, Jinchun Jiang, Pingxiong Yang and Junhao Chu, “Cu2ZnSnS4 thin film solar cell utilizing rapid thermal process of precursors sputtered from a quarternary target: a promising application in industrial processesRSC Adv.4, 43080 (2014)

[20] Y. Tu, Z. Tang, X. G. Zhao, Y. Chen, Z. Q. Zhu, J. H. Chu, and J. C. Fang, “A paramagnetic neutral VAlON center in wurtzite AlN for spin qubit application” Appl. Phys. Lett. 103, 072103 (2013)

[21] Jun He, Lin Sun, Nuofan Ding, Hui Kong, Shaohua Zuo, Shiyou Chen, Ye Chen, Pingxiong Yang, Junhao Chu, “Single-step preparation and characterization of Cu2ZnSn(SxSe1-x)4 thin films deposited by Pulsed Laser Deposition method”, Journal of Alloys and Compounds 529, 34 (2012)

[22] Jun He, Lin Sun, Shiyou Chen, Ye Chen, Pingxiong Yang, Junhao Chu, “Composition dependence of structure and optical properties of Cu2ZnSn(S,Se)4 solid solution: A experimental study”, Journal of Alloys and Compounds, 511, 129 (2012)

[23] J. L. Robb, Y. Chen, A. Timmons, K. C. Hall, O. Bshchekin, D. G. Deppe, “Time-resolved Faraday Rotation Measurements of Spin Relaxation in InGaAs/GaAs Quantum Dots: Role of Excess Energy”, Appl. Phys. Lett. 90, 153118 (2007)

[24] F. J. Teran, Y. Chen, M. Potemski, G. Karczeski, T. Wojtowicz, “Optical properties of CdxMn1-xTe quantum wells across the Mott transition: An interband spectroscopy study”, Phys. Rev. B. 73, 115336 (2006).

[25] Ye Chen, Tsuyoshi Okuno, Yasuaki Masumoto Yoshikazu Terai, Shinji Kuroda, Koki Takita, “Spin relaxation in CdTe quantum dots”, Phys. Rev. B. 71, 033314, (2005)

[26] Y. Chen, G. H. Li, Z. M. Zhu, H. X. Han, and Z. P. Wang W. Zhou and Z. G. Wang, “Photoluminescence studies of type-II self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on (311)A GaAs substrate Appl. Phys. Lett. 76, 3188 (2000)

[27] Y Chen, W Zhang, G H Li, Z M Zhu, H X Han, Z P Wang, W Zhou and Z G Wang, “Pressure behaviour of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots with multi-modal distribution in size” J. Phys.: Condens. Matter 12, 3173–3180 (2000)

[28] Y. Chen, G.H. Li, W. Zhang, Z.M. Zhu, H.X. Han, Z.P. Wang, W. Zhou, Z.G. Wang, “Self-ordering of quasi-quantum wire in InAlAsAlGaAs multilayer nanostructure and its optical anisotropy” Journal of Crystal Growth 209, 994 (2000)

专利:

[1] 马传贺,陈晔,安雪娥,王宇, “温度控制系统和光学控制台”. 发明授权CN106444892B

[2] 马传贺,陈晔,江锦春,郭一新,安雪娥,王宇,王知权,卢小双,激光模组和包含其的激光控制仪,实用新型授权CN206542064U

[3] 马传贺,孙琳,江锦春,陈晔,卢小双,徐斌,“CZTS太阳能电池制作方法,发明授权CN 108172660B

[4] 陈晔,周桃飞,崔苗,人工仿生复眼的制备方法,中国发明专利,2009.08;专利号:ZL200910183930.


荣誉及奖励

招生信息

10 访问

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