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陈晔

物理与电子科学学院      

个人资料

  • 部门: 物理与电子科学学院
  • 毕业院校:
  • 学位:
  • 学历:
  • 邮编:
  • 联系电话: 13651659022
  • 传真:
  • 电子邮箱: ychen@ee.ecnu.edu.cn
  • 办公地址: 闵行校区,信息楼347室
  • 通讯地址: 上海市闵行区东川路500号华东师范大学信息楼347,邮编:200241

教育经历

工作经历

个人简介

社会兼职

1. 主持 国家自然科学基金面上项目,61874045,铜锌锡硫硒薄膜太阳电池的微区缺陷与超快载流子动力学研究,2019/1-2022/12;

2. 参与 国家重点研发计划,2016YFB0501604,激光稳频技术和高密度原子自旋体系的制备,2016/6-2020/12;

3. 参与 国家自然科学基金重大仪器专项,61227902,基于原子自旋效应的超高灵敏磁场和惯性测量实验研究装置, 2013/1-2018/12

4. 主持 国家自然科学基金面上项目,10874127,基于纳米结构的新型太阳电池的载流子动力学研究, 2009/1-2011/12

研究方向

长期从事低维半导体材料、新型太阳电池器件等的光电性质研究。利用稳态和时间分辨光谱、磁光光谱等技术开展低维半导体的自旋电子结构、载流子和自旋动力学、以及光学自旋量子调控研究。已在 APLPRB等国内外学术期刊上发表学术论文40多篇。

目前研究兴趣主要包括:

1、低维半导体材料的载流子和自旋动力学研究;

2、新型太阳电池材料和器件表征;

3、固体缺陷色心的光量子调控。

开授课程

科研项目

学术成果

[1] Chuanhe Ma#, Xiaoshuang Lu, Bin Xu, Fei Zhao, Xueer An, Bo Li, Lin Sun, Jinchun Jiang*, Ye Chen*, Junhao Chu, Effects of sputtering parameters on photoelectric properties of AZO film for CZTS solar cell, Journal of Alloys and Compounds, 774. 201 (2019)

[2] Xuee An#, Zhengjun Shang, Chuanhe Ma, Xinhe Zheng, Cuiling Zhang, Lin Sun, Fangyu Yue, Bo Li*, and Ye Chen**, Temperature and excitation dependence of stimulated emission and spontaneous emission in InGaN epilayer, Chin. Phys. B. 28. 057802 (2019)

[3] Jun He, Xiaoshuang Lu, Xinran Li, Yuchen Dong, Fangyu Yue, Ye Chen*, Lin Sun*, Compositional dependence of photovoltaic properties of Cu2ZnSnSe4 thin film solar cell: Experiment and simulation, Pingxiong Yang, Junhao Chu, Solar Energy 159. 572578 (2018)

[4] G.D. Cheng, Y.G. Zhang, L. Yan*, H.F. Huang, Q. Huang, Y.X. Song, Y. Chen*, Z. Tang, A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application, Computational Materials Science, 129. 247–251 (2017)

[5] G.D. Cheng, L.Yan and Y. Chen*, Divalent nickel doped cubic magnesium oxide for spin qubit application, Journal of Materials Science, Vol 52138200 (2017)

[6] Jun He, Lin Sun, Ye Chen, Jinchun Jiang, Pingxiong Yang, Junhao Chu, “Influence of sulfurization pressure on Cu2ZnSnS4 thin films and solar cells prepared by sulfurization of metallic precursors”, Journal of Power Sources, 273, 600 (2015)

[7] Z. J. Shang, X. H. Zheng*, C. Yang, Y. Chen*, B. Li, L. Sun, Z. Tang, and D. G. Zhao, “Carrier thermalization under stimu lated emission in In0.17Ga0.83N epilayer at room temperature” Appl. Phys. Lett. 105, 232104 (2014)

[8] Jun He, Lin Sun, Ye Chen, Jinchun Jiang, Pingxiong Yang and Junhao Chu, “Cu2ZnSnS4 thin film solar cell utilizing rapid thermal process of precursors sputtered from a quarternary target: a promising application in industrial processesRSC Adv. 4, 43080 (2014)

[9] Y. Tu, Z. Tang, X. G. Zhao, Y. Chen, Z. Q. Zhu, J. H. Chu, and J. C. Fang, “A paramagnetic neutral VAlON center in wurtzite AlN for spin qubit application” Appl. Phys. Lett. 103, 072103 (2013)

[10] Jun He, Lin Sun, Nuofan Ding, Hui Kong, Shaohua Zuo, Shiyou Chen, Ye Chen, Pingxiong Yang, Junhao Chu, “Single-step preparation and characterization of Cu2ZnSn(SxSe1-x)4 thin films deposited by Pulsed Laser Deposition method”, Journal of Alloys and Compounds 529, 34 (2012)

[11] Jun He, Lin Sun, Shiyou Chen, Ye Chen, Pingxiong Yang, Junhao Chu, “Composition dependence of structure and optical properties of Cu2ZnSn(S,Se)4 solid solution: A experimental study”, Journal of Alloys and Compounds, 511, 129 (2012)

[12] J. L. Robb, Y. Chen, A. Timmons, K. C. Hall, O. Bshchekin, D. G. Deppe, “Time-resolved Faraday Rotation Measurements of Spin Relaxation in InGaAs/GaAs Quantum Dots: Role of Excess Energy”, Appl. Phys. Lett. 90, 153118 (2007)

[13] F. J. Teran, Y. Chen, M. Potemski, G. Karczeski, T. Wojtowicz, “Optical properties of CdxMn1-xTe quantum wells across the Mott transition: An interband spectroscopy study”, Phys. Rev. B. 73, 115336 (2006).

[14] Ye Chen, Tsuyoshi Okuno, Yasuaki Masumoto Yoshikazu Terai, Shinji Kuroda, Koki Takita, “Spin relaxation in CdTe quantum dots”, Phys. Rev. B. 71, 033314, (2005)

[15] Y. Chen, G. H. Li, Z. M. Zhu, H. X. Han, and Z. P. Wang W. Zhou and Z. G. Wang, “Photoluminescence studies of type-II self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on (311)A GaAs substrate Appl. Phys. Lett. 76, 3188 (2000)

[16] Y Chen, W Zhang, G H Li, Z M Zhu, H X Han, Z P Wang, W Zhou and Z G Wang, “Pressure behaviour of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots with multi-modal distribution in size” J. Phys.: Condens. Matter 12, 3173–3180 (2000)

[17] Y. Chen, G.H. Li, W. Zhang, Z.M. Zhu, H.X. Han, Z.P. Wang, W. Zhou, Z.G. Wang, “Self-ordering of quasi-quantum wire in InAlAsAlGaAs multilayer nanostructure and its optical anisotropy” Journal of Crystal Growth 209, 994 (2000)

专利:

1.马传贺,陈晔,安雪娥,王宇,温度控制系统与光学控制台,中国发明专利 2018.6.22;专利号:ZL201610817247.1

1.陈晔,周桃飞,崔苗,人工仿生复眼的制备方法, 中国发明专利,2009.08;专利号:ZL200910183930.4

荣誉及奖励

招生信息

10 访问

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