周龙达

周龙达，博士，华东师范大学通信与电子工程学院副教授。本科毕业于北京航空航天大学电子信息工程专业，博士毕业于中国科学院微电子研究所微电子学与固体电子学专业，曾在上海交通大学开展博士后研究。长期聚焦集成电路可靠性，围绕先进逻辑与存储芯片开展缺陷表征、失效机理与可靠性建模研究，并推进工艺/电路协同优化；相关成果以第一/通讯作者在微电子领域权威期刊/国际会议如IEEE EDL、IEEE TED、IRPS等发表论文16篇。

依托华东师范大学集成电路学院吴幸教授团队和原位先进器件中心，围绕后摩尔时代集成电路的重大需求，紧跟国际半导体器件路线图（ITRS），坚持“材料—器件—电路—系统”协同思路，以原位与多物理场表征为特色，面向先进工艺节点（14 nm、3 nm 及以下）与极端应用场景，开展以下研究：

1.         先进逻辑器件可靠性机理与建模

面向先进工艺节点器件，在原位偏置、温度、应力加载条件下研究 BTI、HCD、SHE 等失效机理及应力/应变耦合；建立从 TCAD 到紧凑模型的参数提取与寿命预测流程，并与可靠性感知电路设计联动验证。

2.         极端环境与芯片—系统级可靠性

关注空间辐照、湿热、高低温等环境下的芯片—系统级可靠性；开展长期稳定性表征，建立系统级可靠性评估与加固方法。

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欢迎具备微电子、电子信息、计算机、半导体物理等相关背景并有志于上述方向的同学加入课题组，共同开展研究与实践。

联系方式：ldzhou@cee.ecnu.edu.cn

1. DRAM存储器件行锤效应的漏电机理及其抑制方法的研究，国家自然科学基金，青年科学基金，主持

期刊论文

1.  Longda Zhou, Bo Tang, Zhigang Ji, Hong Yang^*, Hao Xu, Qianqian Liu, Eddy Simoen, Xiaolei Wang, Xueli Ma, Yongliang Li, Huaxiang Yin, Anyan Du, Chao Zhao, and Wenwu Wang^*, An investigation of field reduction effect on NBTI parameter characterization and lifetime prediction using a constant field stress method, IEEE Trans. Device Mater. Rel., vol. 20, no. 1, pp. 92-96, Mar. 2020.

2.  Longda Zhou, Guilei Wang, Xiaogen Yin, Zhigang Ji, Qianqian Liu, Hao Xu, Hong Yang^*, Eddy Simoen, Xiaolei Wang, Xueli Ma, Yongliang Li, Zhenzhen Kong, Haojie Jiang, Ying Luo, Huaxiang Yin, Chao Zhao, Wenwu Wang^*, Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal, Microelectron. Reliab., vol. 107, p. 113627, Apr. 2020.

3.  Longda Zhou, Qingzhu Zhang, Hong Yang^*, Zhigang Ji, Zhaohao Zhang, Qianqian Liu, Hao Xu, Bo Tang, Eddy Simoen, Xueli Ma, Xiaolei Wang, Yongliang Li, Huaxiang Yin^*, Jun Luo, Chao Zhao, and Wenwu Wang, Understanding Frequency Dependence of Trap Generation Under AC Negative Bias Temperature Instability Stress in Si p-FinFETs, IEEE Electron Device Lett., vol. 41, no. 7, pp. 965-968, Jul. 2020.

4.  Longda Zhou, Qianqian Liu, Hong Yang^*, Zhigang Ji, Hao Xu, Bo Tang, Eddy Simoen, Haojie Jiang, Ying Luo, Xiaolei Wang, Xueli Ma, Yongliang Li, Jun Luo, Huaxiang Yin, Chao Zhao, and Wenwu Wang^*, Insights into the Effect of TiN Thickness Scaling on DC and AC NBTI Characteristics in Replacement Metal Gate pMOSFETs, IEEE Trans. Device Mater. Rel., vol. 20, no. 3, pp. 498-505, Sept. 2020.

5.  Longda Zhou, Qianqian Liu, Hong Yang^*, Zhigang Ji, Hao Xu, Guilei Wang^*, Eddy Simoen, Haojie Jiang, Ying Luo, Zhenzhen Kong, Guobin Bai, Jun Luo, Huaxiang Yin, Chao Zhao, and Wenwu Wang, Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization, IEEE J. Electron Devices Soc., vol. 9, pp. 229-235, Feb. 2021.

6.  Longda Zhou, Qingzhu Zhang, Hong Yang^*, Zhigang Ji, Guilei Wang, Qianqian Liu, Bo Tang, Rui Gao, Eddy Simoen, Huaxiang Yin, Chao Zhao, Anyan Du, Jun Luo, and Wenwu Wang, Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique, IEEE Trans. Electron Devices, vol. 68, no. 9, pp. 4251-4258, Sept. 2021.

7.  Jie Li^#, Longda Zhou^#,*, Sheng Ye, Zheng Qiao, and Zhigang Ji^*, Understanding the Competitive Interaction in Leakage Mechanisms for Effective Row Hammer Mitigation in Sub-20 nm DRAM, IEEE Electron Device Lett., vol. 45, no. 1, pp. 40-43, Jan. 2024.

8.  Longda Zhou^*, Sheng Ye, Runsheng Wang, and Zhigang Ji^*,Unveiling RowPress in Sub-20 nm DRAM Through Comparative Analysis With Row Hammer: From Leakage Mechanisms to Key Features, IEEE Trans. Electron Devices, vol. 71, no. 8, pp. 4677-4684, Aug. 2024.

国际会议论文

1.  Longda Zhou, Bo Tang, Hong Yang^*, Hao Xu, Yongliang Li, Eddy Simoen, Huaxiang Yin, Huilong Zhu, Chao Zhao, Wenwu Wang^*, Dapeng Chen and Tianchun Ye, Physical Mechanism Underlying the Time Exponent Shift in the Ultra-fast NBTI of High-k/Metal gated p-CMOSFETs, in 2018 25^th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Jul. 2018.

2.  Longda Zhou, Guilei Wang, Xiaogen Yin, Bo Tang, Qianqian Liu, Zhigang Ji, Hao Xu, Zhenzhen Kong, Haojie Jiang, Ying Luo, Eddy Simoen, Hong Yang^*, Huaxiang Yin, Anyan Du, Huilong Zhu, Chao Zhao, Wenwu Wang^* and Tianchun Ye, Comparison of NBTI kinetics in RMG Si p-FinFETs featuring Atomic Layer Deposition Tungsten (ALD W) Filling Metal Using B₂H₆ and SiH₄ Precursors, in 2019 IEEE 26^th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA), Hangzhou, China, Jul. 2019.

3.  Longda Zhou, Qianqina Liu, Zhigang Ji, Hong Yang^*, Hao Xu, Haojie Jiang, Ying Luo, Huaxiang Yin and Wenwu Wang^*, A Comparative Study of TiN Thickness Scaling Impact on DC and AC NBTI Kinetics in Replacement Metal Gate pMOSFETs, in 2019 IEEE International Integrated Reliability Workshop (IIRW), Fallen Leaf Lake, USA, Oct. 2019.

4.  Longda Zhou, Qingzhu Zhang, Hong Yang^*, Zhigang Ji, Zhaohao Zhang^*, Renren Xu, Huaxiang Yin and Wenwu Wang, Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs, in 2020 IEEE International Reliability Physics Symposium (IRPS), Dallas, USA, Apr. 2020.

5.  Longda Zhou, Qingzhu Zhang, Hong Yang^*, Zhigang Ji, Zhaohao Zhang, Renren Xu, Huaxiang Yin, Anyan Du and Wenwu Wang^*, Impact of Electron trapping on Energy Distribution Characterization of NBTI-Related Defects for Si p-FinFETs, in 2020 IEEE 27^th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Jul. 2020.

6.  Longda Zhou, Zhaohao Zhang, Hong Yang^*, Zhigang Ji, Qianqian Liu, Qingzhu Zhang^*, Eddy Simoen, Huaxiang Yin, Jun Luo, Anyan Du, Chao Zhao and Wenwu Wang, A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/AC NBTI Stress/Recovery Condition in Si p-FinFETs, in 2021 IEEE International Reliability Physics Symposium (IRPS), Monterey, USA, Mar. 2021.

7.  Longda Zhou, Jie Li, Zheng Qiao, Pengpeng Ren, Zixuan Sun, Jianping Wang, Blacksmith Wu, Zhigang Ji^*, Runsheng Wang^*, Kanyu Cao and Ru Huang, Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation, in 2023 IEEE International Reliability Physics Symposium (IRPS), Monterey, USA, Mar. 2023.

8.  Longda Zhou^*, Jie Li, Pengpeng Ren, Sheng Ye, Da Wang, Zheng Qiao and Zhigang Ji^*, Understanding the Physical Mechanism of RowPress at the Device-Level in Sub-20 nm DRAM, in 2024 IEEE International Reliability Physics Symposium (IRPS), Grapevine, USA, Apr. 2024.