翁国恩

2013/10-2014/01，日本东京大学，物性研究所，访问学习；

2010/09-2015/06，厦门大学，微电子学与固体电子学，工学博士；

2006/09-2010/06，扬州大学，物理学，理学学士。

2020/4-至今，华东师范大学，电子工程系，副教授；

2017/12-2020/3，华东师范大学，电子工程系，专任副研究员；

2015/9-2017/11，华东师范大学，电子工程系，博士后。

  Guoen Weng was born in Fujian Province, China, in 1988. He received the B.S. degree in physics in 2010 from Yangzhou University, Yangzhou, China, and the Ph.D. degree in microelectronics and solid electronics in 2015 from Xiamen University, Xiamen, China. He is now an Associate Professor at East China Normal University, Shanghai, China. His current research interests include III-nitride semiconductor lasers, vertical-cavity surface-emitting lasers, and lead halide-based perovskite materials and optoelectronic devices.

新型半导体发光器件，垂直腔面发射激光器(VCSEL)，低维材料及微纳激光器，LED性能表征及缺陷分析

1. 固态器件物理学(上)—固体物理 （本科）

2. LED技术与应用 （本科）

3. 光电子材料与器件（本科）

4. 微电子学与固体电子学研究方法 （研究生）

承担项目

1. 国家自然科学基金(青年项目), 61704055, 氮化物增益开关超短脉冲垂直腔面发射激光器研究, 2018/01-2020/12。

2. “幸福之花”先导研究基金项目(智能+)子课题——激光雷达用超快半导体激光芯片设计及工艺开发，2020/01-2022/12。

Selected Publications:

[14] Guoen Weng,* Jiao Tian, Shengjie Chen, Jiyu Yan, Hanbing Zhang, Yuejun Liu, Chunhu Zhao, Xiaobo Hu, Xianjia Luo, Jiahua Tao, Shaoqiang Chen,* Ziqiang Zhu, Junhao Chu, and Hidefumi Akiyama, “Electron‒Hole Plasma Lasing Dynamics in CsPbCl_mBr_3-m Microplate Lasers”, ACS Photonics8, 787–797 (2021). (SCI一区, Supplementary Cover).

[13] Chunhu Zhao, Jiahua Tao, Jiao Tian, Guoen Weng,* Huimin Liu, Yuejun Liu, Jiyu Yan, Shengjie Chen, Yanlin Pan, Xiaobo Hu, Shaoqiang Chen,* Hidefumi Akiyama, and Junhao Chu, “High performance single-mode vertical cavity surface emitting lasers based on CsPbBr3 nanocrystals with simplified processing”, Chem. Eng. J. 2021,  https://doi.org/10.1016/j.cej.2020.127660 (SCI一区)

[12] Guoen Weng,* Jiyu Yan, Shengjie Chen, Chunhu Zhao, Hanbing Zhang, Jiao Tian, Yuejun Liu, Xiaobo Hu, Jiahua Tao, Shaoqiang Chen,* Ziqiang Zhu, Hidefumi Akiyama, and Junhao Chu, “Superior single-mode lasing in a self-assembly CsPbX3 microcavity over an ultrawide pumping wavelength range”, Photon. Res.9, 54–65 (2021). (SCI一区)

[11] Guoen Weng, Yuejun Liu, Shaoqiang Chen,* Takashi Ito, Xiaobo Hu, Chunhu Zhao, Jianping Liu, Junhao Chu, and Hidefumi Akiyama, “Quantitative study of electron tunneling dynamics in asymmetric coupled InGaN/GaN quantum wells”, Appl. Opt. 59, 6231 (2020). (SCI三区)

[10] Guoen Weng, Shaoqiang Chen,* Yang Mei, Yuejun Liu, Hidefumi Akiyama, Xiaobo Hu, Jianping Liu, Baoping Zhang, and Junhao Chu, “Multiwavelength GaN-Based Surface-Emitting Lasers and Their Design Principles”, Ann. Phys. (Berlin) 1900308 (2020). (SCI二区, Outside Front Cover)

[9] Guoen Weng, Jiao Tian, Shiming Chen, Juanjuan Xue, Jiyu Yan, Xiaobo Hu, Shaoqiang Chen,* Ziqiang Zhu, and Junhao Chu, “Giant reduction of the random lasing threshold in CH₃NH₃PbBr₃ perovskite thin films by using a patterned sapphire substrate”, Nanoscale 11, 10636–10645 (2019). (SCI一区, Outside Front Cover)

[8] Guoen Weng, Juanjuan Xue, Jiao Tian, Xiaobo Hu, Hechun Lin, Shaoqiang Chen,* Ziqiang Zhu, and Junhao Chu, “Picosecond Random Lasing Based on Three-Photon Absorption in Organometallic Halide CH₃NH₃PbBr₃ Perovskite Thin Films”, ACS Photonics 5, 2951–2959 (2018). (SCI一区)

[7] Guoen Weng, Shaoqiang Chen,* Baoping Zhang, Xiaobo Hu, Shigeyuki Kuboya, and Kentaro Onabe, “Dynamics of carrier tunneling and recombination in asymmetric coupled InGaN multiple quantum wells”, Optics Express 25(20), 24745–24755 (2017). (SCI二区, Editor’s Pick)

[6] Yang Mei,^#Guoen Weng,^# Bao-Ping Zhang,* Jianping Liu,* Werner Hofmann, Leiying Ying, Jiangyong Zhang, Zengcheng Li, Hui Yang, and Hao-Chung Kuo, “Quantum dot vertical-cavity surface-emitting lasers covering the ‘green gap’”, Light: Science & Applications 6, e16199 (2017).(SCI一区)

[5] Guoen Weng, Shaoqiang Chen,* Takashi Ito, Hidefumi Akiyama, Xiaobo Hu, and Baoping Zhang,* “Emission characteristics of high-gain GaN-based Vertical-Cavity Surface-Emitting Lasers”,33rd International Conference on the Physics of Semiconductors, IOP Conf. Series: Journal of Physics: Conf. Series 864, 012083 (2017). (InternationalConference)

[4] Guoen Weng, Yang Mei, Jianping Liu, Werner Hofmann, Leiying Ying, Jiangyong Zhang, Yikun Bu, Zengcheng Li, Hui Yang, and Baoping Zhang,* “Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers”, Optics Express 24(14), 15546–15553 (2016). (SCI二区)

[3] Guoen Weng, Wanru Zhao, Shaoqiang Chen, Hidefumi Akiyama, Zengcheng Li, Jianping Liu and Baoping Zhang,* “Stronglocalizationeffect and carrier relaxationdynamics in self-assembled InGaN quantum dotsemitting in the green”, Nanoscale Research Letters10: 31 (2015). (SCI二区)

[2] Guoen Weng, Baoping Zhang,* Mingming Liang, Xueqin Lv, Jiangyong Zhang, Leiying Ying, Zhiren Qiu, H. Yaguchi, S. Kuboya, K. Onabe, Shaoqiang Chen, and H. Akiyama, “Opticalpropertiesandcarrierdynamicsinasymmetric coupled InGaN multiplequantumwells”, Functional Materials Letters 6(2), 1350021 (2013). (SCI四区)

[1] Guoen Weng, Ankai Ling, Xueqin Lv, Jiangyong Zhang, and Baoping Zhang,* “III-Nitride-based quantum dots and their optoelectronic applications”, Nano-Micro Letters 3(3), 200–207 (2011). (SCI一区)

专利

[1]一种多波长GaN基垂直腔面发射激光器的有源区结构设计，翁国恩，陈少强，胡小波，梅洋，发明授权，专利号: 201710891721.X

[2]一种基于聚合物微球制备纳米级图形化蓝宝石衬底的方法，翁国恩，陈少强，胡小波，涂亮亮，魏明德，发明授权，专利号: ZL201710024540.7

[3]一种纳米级图形化蓝宝石衬底及其制备方法和应用，翁国恩，陈少强，胡小波，涂亮亮，魏明德，发明授权，专利号: ZL201610651489.8

[4]一种基于纳米压印技术制备图形化蓝宝石衬底的方法，陈少强，翁国恩，胡小波，涂亮亮，魏明德，发明授权，专利号: ZL201610051094.4

[5]一种基于图形化衬底的低阈值光泵浦随机激光器，翁国恩，陈少强，田姣，陈诗明，胡小波，发明授权，专利号: ZL201910046828.3

[6]一种氮化镓基谐振腔气体传感器的制备方法, 张保平(导师), 翁国恩, 梅洋, 张江勇, 应磊莹, 发明授权, 专利号: ZL201510094227.1

[7]一种多结太阳能电池子结之间发光耦合效率的检测装置及方法，陈少强，胡小波，翁国恩，发明授权，专利号: ZL201710148607.8

[8]双光源激发光致发光检测半导体缺陷的装置及其检测方法，胡小波，陈少强，翁国恩，发明授权，专利号: ZL201710150530.8

[9]一种多波长GaN基非对称量子阱面发射激光器及其制备方法，翁国恩，陈少强，胡小波，申请号: 201710888773.1