个人资料
教育经历2010/09~2015/07月 清华大学 微电子学与固体电子学 博士; 2006/09~2010/07月 吉林大学 电子科学与技术专业 学士; 工作经历2023/01~至 今 华东师范大学 通信与电子工程学院 教 授; 2019/01~2022/12 华东师范大学 通信与电子工程学院 副教授; 2016/04~2018/12 华东师范大学 信息科学与技术学院 讲 师; 个人简介孙亚宾,华东师范大学通信与电子工程学院教授,博士生导师,紫江优秀青年学者,国家“万人计划”青年拔尖人才计划入选者。 瞄准集成电路发展的战略需求,与上海集成电路研发中心、华力微电子、华虹宏力、华为海思等集成电路龙头企业保持着长期密切的产学研合作,聚焦深纳米集成电路工艺、核心器件、物理模型及相关EDA工具的研究。参与国家02重大专项、主持国家自然科学青年项目、面上项目、上海市科委集成电路领域”探索者计划“等重要科研项目10余项。在Nature、Nature Nanotechnology、IEEE Transactions on Electron Devices、IEEE Transactions on Microwave theory and Techniques等微电子领域国际重要期刊上发表学术论文80余篇,申请发表专利近50项,授权21项,受邀出版国际英文学术专著 1部,多次指导学生参与集成电路创新创业大赛、研究生创“芯”大赛等集成电路领域核心赛事,获国家级一等奖、二等奖等奖项8次。 社会兼职华力微电子 、华虹宏力国家级技术中心外聘专家 研究方向(1) 半导体器件TCAD仿真及优化设计 (2) 半导体器件建模及EDA工具 (3) 半导体器件可靠性及模型实现 (4) Chiplet电热力多物理场仿真设计 招生与培养开授课程本科生: 《半导体器件原理》 《集成电路工艺原理》 《半导体器件测试及分析实践》 研究生: 《现代半导体器件物理》 科研项目1. 国家自然科学基金面上项目:非对称侧墙三维环栅可重构晶体管:机理、模型及工艺研究,2023/01~2026/12, 主持 2. 国家自然科学基金青年基金:具备波动性表征的10nm及以下FinFET精准射频模型研究,2018/01~2020/12, 主持 3. 上海市科委“探索者计划”: 硅基毫米波太赫兹建模及IP设计验证,2021/12~2024/11,主持 4 上海市科委“探索者计划”: 先进工艺中后道寄生精准表征、测试及建模,2022/10~2025/09,主持 5. 上海市科委“杨 帆 计 划”: 基于三维全波电磁场分析的FinFET微波小信号模型及波动性研究,2017/05~2020/05; 主持 6. 重庆市自然科学基金面上项目:三维环栅可重构晶体管紧凑模型及工艺波动性研究,2022/8~2025/7, 主持 7. 产学研合作:新型器件及PEX建模,2023/6~2024/5,主持 8. 产学研合作:MOS工艺寄生参数提取,2022/08~2022/10,主持 9. 产学研合作:SOI开关器件设计及优化,2022/07~至今,主持 10. 产学研合作:新型BEOL器件及建模,2021/10~2022/10,主持 11. 产学研合作:先进器件设计及模型,2021/05~至今,主持 12. 产学研合作:基于机器学习的PEX technifile设计及建模,2021/10~2022/10, 参与 13. 产学研合作:PEX&MRAM建模,2020/01~2021/12, 参与 14. 国家科技重大专项 (2016ZX02301003): 22nm FD-SOI MOSFET栅围寄生效应及建模, 参与 学术成果代表性著作: Yabin Sun, Research on the Radiation Effects and Compact Model of SiGe HBT, ISBN: 978-981-10-4611-7, Springer Publishers. --------------------------------- 代表性学术论文---------------------------------------- (27) Chao Wang, Junfeng Hu, Ziyu Liu*, Xiaojin Li, Yanling Shi and Yabin Sun*, TCAD simulations of Reconfigurable Field-Effect Transistor with Embedded-Fin-Contact to Improve ON-current, IEEE Transactions on Electron Devices 2024, 71(5), 2849-2855, https://ieeexplore.ieee.org/document/10475901 (26) Hongbo Ye, Junfeng Hu, Chao Wang, Xiaojin Li, Yanling Shi, Zhiagng Mao, and Yabin Sun*, Novel Reconfigurable Transistor with Extended Source/Drain beyond 3nm Technology Node, IEEE Transactions on Electron Devices 2024, 71(4), 2265-2270, https://ieeexplore.ieee.org/document/10443427 (25) Junfeng Hu, Chao Wang, Ziyu Liu*, Xiaojin Li, and Yanling Shi, Yabin Sun*, Novel Reconfigurable Field-Effect Transistor with Surrounded Source/Drain to Improve ON-State Current, IEEE Transactions on Electron Devices, 2024, 71(1), 873-878, https://ieeexplore.ieee.org/document/10339290 (24) Junfeng Hu, Chao Wang, Yabin Sun*, Ziyu Liu*, Xiaojin Li, and Yanling Shi, Novel Reconfigurable Field Effect Transistor with Arch-Shaped Gate to Improve ON-State Current, IEEE Transactions on Electron Devices 2023, 70(10), 4980-4986 https://ieeexplore.ieee.org/document/10223710 (23) Xiaoqiao, Yabin Sun*, Ziyu Liu*, Xiaojin Li, and Yanling Shi, Compact Modeling of Process Variations in Nanosheet Complementary FET (CFET) and Circuit Performance Predictions, IEEE Transactions on Electron Devices 2023, 70(7), 3935-3942 https://ieeexplore.ieee.org/document/10138802 (22) Rui Zhang, Yabin Sun*, Ziyu Liu*, Yun Liu, Xiaojin Li, and Yanling Shi, Novel 3D Fin-RFET with Dual-Doped Source/Drain to Improve ON-state Current, IEEE Transactions on Electron Devices 2022, 69(12), 6569-6575 https://ieeexplore.ieee.org/document/9940288 (21) Xiaoqiao Yang, Yabin Sun*, Ziyu Liu*, Xiaojin Li, Yun Liu, Yanling Shi, 3-D Modeling of Fringe Gate Capactiance in Complementary FET(CFET), IEEE Transactions on Electron Devices 2022, 69(11), 5978-5984 https://ieeexplore.ieee.org/document/9912378 (20) Ziyu Liu*, Han Jiang, Ziyuan Zhu, Yain Sun*, Lin Chen, Qingqing Sun, Thermal-Mechanical and Signal Reliability of a New Differentiated TSV, IEEE Transactions on Electron Devices 2022, 69(10), 5766-5772 https://ieeexplore.ieee.org/document/9868336 (19) Zhangjun Shi, Xiaojin Li*, Yabin Sun, Yanling Shi, Co-optimization between Static and Switching Characteristics of LDMOS with P-type Trapezoidal Gate Embedded in Drift Region, IEEE Transactions on Electron Devices 2022, 69(8), pp.4102-4208 https://ieeexplore.ieee.org/document/9793565 (18) Xiaoqiao Yang, Xianglong Li, Yabin Sun*, Ziyu Liu*, Yunliu, Xiaojin Li and Yanling Shi, Impact of Process Variation on Nanosheet Gate-all-around Complementary FET (CFET), IEEE Transactions on Electron Devices,2022, 69(7), pp.4029~4036 https://ieeexplore.ieee.org/document/9786007 (17) Yang Shen#, Zuoyuan Dong#, Yabin Sun#, Hao Guo#, Fan Wu, Xianglong Li, Jun Tang, Jun Liu, Xing Wu, He Tian, Tian-Ling Ren, The trend of 2D transistors toward integrated circuits: Scaling down and new mechanisms, Advanced Material, 2022, https://onlinelibrary.wiley.com/doi/10.1002/adma.202201916 (16) Yabin Sun, Meng Wang, Xianglong Li, Shaojian Hu, Ziyu Liu, Xiaojin Li, Yun Liu and Yanling Shi, Improved MEOL and BEOL Parasitic-Aware Design Technology Co-Optimization for 3 nm Gate-All-Around Nanosheet Transistor, IEEE Transactions on Electron Devices, 2022, 69(2), pp.462-468 https://ieeexplore.ieee.org/document/9664270 (15) Fan Wu, He Tian, Yang Shen, Zhan Hou, Jie Ren, Guangyang Gou, Yabin Sun, Yi Yang, Tian-Ling Ren, Vertical MoS2 transistors with sub-1-nm gate lengths, Nature, 2022, 603, 259-264 https://www.nature.com/articles/s41586-021-04323-3 (14) Yabin Sun, Gaohengbin, Xianglong Li, Xiaoqiao Yang, Ziyu Liu, Xiaojin Li and Yanling Shi, Impact of Process Fluctuations on RF Small-Signal Parameter of Gate-All-Around Nanosheet Transistor Beyond 3 nm Node, IEEE Transactions on Electron Devices 2022, 69(1), 31-38 https://ieeexplore.ieee.org/document/9640239 (13) Yabin Sun, Xianglong Li, Ziyu Liu, Yanling Shi, Xiaojin Li, Vertically Stacked Nanosheets Tree-type Reconfigurable Transistor with Improved On-Current, IEEE Transactions on Electron Devices 2022, 69(1), 370-374 https://ieeexplore.ieee.org/document/9629261 (12) Renhua Liu, Xiaojin Li, Yabin Sun, Fei Li, Yanling Shi, Thermal Coupling Among Channels and Its DC Modeling in sub-7-nm Vertically Stacked Nanosheet Gate-All-Around Transistor, IEEE Transactions on Electron Devices 2021, 68(12), 6563-6570 https://ieeexplore.ieee.org/document/9604070 (11) Yabin Sun, Jinyan Shao,Ziyu Liu, Teng Wang, Yanling Shi, Xiaojin Li, Evaluation of Single-Event-Transient Effects in Reconfigurable Field Effect Transistor Beyond 3 nm Technology Node, IEEE Transactions on Electron Devices, 2021, 68(12), 6001~6006 https://ieeexplore.ieee.org/document/9576088 (10) Lan Liu, Chunsen Liu, Lilai Jiang, Jiayi Li, Yi Ding, Shuiyuan Wang, Yu-Gang Jiang, Yabin Sun, Jianlu Wang, Shiyou Chen, David Wei Zhang, Peng Zhou, Ultrafast non-volatile flash memory based on van der Waals heterostructures, Nature Nanotechnology, 2021, 16, 874–881 https://www.nature.com/articles/s41565-021-00921-4 (9) Xianglong Li, Yabin Sun*, Xiaojin Li and Yanling Shi, Impact of Process Fluctuations on Reconfigurable Silicon Nanowire Transistor, IEEE Transactions on Electron Devices, 2021, 68(2), 885-891 https://ieeexplore.ieee.org/document/9321221 (8) Xianglong Li, Yabin Sun*, Xiaojin Li, Yanling Shi, Analysis of Metal Work-Function Modulation Effect in Reconfigurable Field Effect Transistor, IEEE Transactions on Electron Devices, 2020, 67(9), 3745-3752 https://ieeexplore.ieee.org/document/9145649 (7) Renhua Liu, Xiaojin Li, Yabin Sun, Yanling Shi, A Vertical Combo Spacer to Optimize Electrothermal Characteristics of 7-nm Nanosheet Gate-All-Around Transistor, IEEE Transactions on Electron Devices, 2020,67(6), 2249-2254 https://ieeexplore.ieee.org/document/9085955 (6) Xianglong Li, Yabin Sun*, Xiaojin Li, Yanling Shiet.al, Electronic Assessment of Novel Arch-shaped Asymmetrical Reconfigurable Field-Effect Transistor, IEEE Transactions on Electron Devices, 2020,67(4),1894-1901 https://ieeexplore.ieee.org/document/9018250 (5) Yan Yao, Yabin Sun*, Xiaojin Li, Yanling Shi et.al, Novel Reconfigurable Field-effect Transistor with Asymmetric Spacer Engineering at Drain Side, IEEE Transactions on Electron Devices, 2020, 67(2),751-757 https://ieeexplore.ieee.org/document/8959371 (4) Junya Sun, Xiaojin Li*, Yabin Sun*, and Yanling Shi, Impact of Geometry, Doping, Temperature, and Boundary Conductivity on Thermal Characteristics of 14-nm Bulk and SOI FinFETs, IEEE Transactions on Device and Materials Reliability, 2020, 20(1), 119-127 https://ieeexplore.ieee.org/document/8951282 (3) Xiaojin Li, Jian Qing,Yabin Sun*, Yan Zeng, Yanling Shi and Yuheng Wang, Analytical Layout Dependent NBTI Degradation Modeling Based on Non-Uniformly Distributed Interface Traps, IEEE Transactions on Device and Materials Reliability 2018, 18(3), 397-403 https://ieeexplore.ieee.org/document/8396308 (2) Xiaojin Li, Jian Qing,Yabin Sun*,Yan Zeng, Yanling Shi and Yuheng Wang, Linear and Resolution Adjusted On-chip Aging Detecting of NBTI Degradation, IEEE Transactions on Device and Materials Reliability, 2018, 18(3), 383-390 https://ieeexplore.ieee.org/document/8385177 (1) Yabin Sun, Jun Fu, Ji Yang, Jun Xu, Yudong Wang, Wei Zhou, Jie Cui, Gaoqing Li, Zhihong Liu, An Improved Small-Signal Model for SiGe HBT Under Off-state, Derived from Distributed Network and Corresponding Model Parameter Extraction, IEEE Transactions on Microwave Theory and Techniques, 63(10), 3131-3141, Oct. 2015 https://ieeexplore.ieee.org/document/7219472 荣誉及奖励2023年国家级青年拔尖人才计划; 2017年上海市扬帆人才计划; 指导学生参加全国集成电路领域竞赛获奖: 2023年,指导研究生参加第六届华为杯中国研究生创“芯”大赛 全国二等奖,概伦电子企业二等奖 2022年,指导研究生参加第六集全国大学生集成电路创新创业大赛 全国一等奖(优秀指导教师)、华东赛区一等奖 2022年,指导本科生参加第六集全国大学生集成电路创新创业大赛 全国优秀奖(优秀指导教师)、华东赛区一等奖 2022年,指导研究生参加第五届华为杯中国研究生创“芯”大赛 全国二等奖,华大九天企业二等奖 2021年,指导研究生参加第四届华为杯中国研究生创“芯”大赛 全国二等奖 2018年,指导研究生参加首届华为杯中国研究生创“芯”大赛 全国二等奖 |