孙亚宾

2010/09~2015/07月     清华大学    微电子学与固体电子学    博士；

2006/09~2010/07月     吉林大学    电子科学与技术专业        学士;

2023/01~至      今     华东师范大学      通信与电子工程学院       教    授;

2019/01~2022/12     华东师范大学       通信与电子工程学院       副教授;

2016/04~2018/12      华东师范大学      信息科学与技术学院       讲    师;

       孙亚宾，华东师范大学通信与电子工程学院教授，博士生导师，紫江优秀青年学者，国家“万人计划”青年拔尖人才计划入选者。

       瞄准集成电路发展的战略需求，与上海集成电路研发中心、华力微电子、华虹宏力、华为海思等集成电路龙头企业保持着长期密切的产学研合作，聚焦深纳米集成电路工艺、核心器件、物理模型及相关EDA工具的研究。参与国家02重大专项、主持国家自然科学青年项目、面上项目、上海市科委集成电路领域”探索者计划“等重要科研项目10余项。在Nature、Nature Nanotechnology、IEEE Transactions on Electron Devices、IEEE Transactions on Microwave theory and Techniques等微电子领域国际重要期刊上发表学术论文80余篇，申请发表专利近50项，授权21项，受邀出版国际英文学术专著 1部，多次指导学生参与集成电路创新创业大赛、研究生创“芯”大赛等集成电路领域核心赛事，获国家级一等奖、二等奖等奖项8次。

华力微电子 、华虹宏力国家级技术中心外聘专家

(1) 半导体器件TCAD仿真及优化设计

(2) 半导体器件建模及EDA工具

(3) 半导体器件可靠性及模型实现

(4) Chiplet电热力多物理场仿真设计

本科生：

《半导体器件原理》

《集成电路工艺原理》

《半导体器件测试及分析实践》

研究生：

《现代半导体器件物理》

1. 国家自然科学基金面上项目：非对称侧墙三维环栅可重构晶体管：机理、模型及工艺研究，2023/01~2026/12, 主持

2. 国家自然科学基金青年基金：具备波动性表征的10nm及以下FinFET精准射频模型研究，2018/01~2020/12, 主持

3. 上海市科委“探索者计划”:  硅基毫米波太赫兹建模及IP设计验证，2021/12~2024/11，主持

4 上海市科委“探索者计划”:  先进工艺中后道寄生精准表征、测试及建模，2022/10~2025/09，主持

5. 上海市科委“杨 帆 计 划”:  基于三维全波电磁场分析的FinFET微波小信号模型及波动性研究，2017/05~2020/05;  主持

6. 重庆市自然科学基金面上项目：三维环栅可重构晶体管紧凑模型及工艺波动性研究，2022/8~2025/7, 主持

7. 产学研合作：新型器件及PEX建模，2023/6~2024/5，主持

8. 产学研合作：MOS工艺寄生参数提取，2022/08~2022/10，主持

9. 产学研合作：SOI开关器件设计及优化，2022/07~至今，主持

10. 产学研合作：新型BEOL器件及建模，2021/10~2022/10，主持

11. 产学研合作：先进器件设计及模型，2021/05~至今，主持

12. 产学研合作：基于机器学习的PEX technifile设计及建模，2021/10~2022/10,  参与

13. 产学研合作：PEX&MRAM建模，2020/01~2021/12,  参与

14. 国家科技重大专项 (2016ZX02301003): 22nm FD-SOI MOSFET栅围寄生效应及建模,  参与

代表性著作：

Yabin Sun, Research on the Radiation Effects and Compact Model of SiGe HBT, ISBN: 978-981-10-4611-7, Springer Publishers.

--------------------------------- 代表性学术论文----------------------------------------

(27)  Chao Wang, Junfeng Hu, Ziyu Liu*, Xiaojin Li, Yanling Shi and Yabin Sun*, TCAD simulations of Reconfigurable Field-Effect Transistor with Embedded-Fin-Contact to Improve ON-current, IEEE Transactions on Electron Devices 2024, 71(5), 2849-2855, https://ieeexplore.ieee.org/document/10475901

(26) Hongbo Ye, Junfeng Hu, Chao Wang, Xiaojin Li, Yanling Shi, Zhiagng Mao, and Yabin Sun*, Novel Reconfigurable Transistor with Extended Source/Drain beyond 3nm Technology Node,  IEEE Transactions on Electron Devices 2024, 71(4), 2265-2270, https://ieeexplore.ieee.org/document/10443427

(25) Junfeng Hu, Chao Wang, Ziyu Liu*, Xiaojin Li, and Yanling Shi, Yabin Sun*, Novel Reconfigurable Field-Effect Transistor with Surrounded Source/Drain to Improve ON-State Current, IEEE Transactions on Electron Devices, 2024, 71(1), 873-878, https://ieeexplore.ieee.org/document/10339290

(24) Junfeng Hu, Chao Wang, Yabin Sun*, Ziyu Liu*, Xiaojin Li, and Yanling Shi, Novel Reconfigurable Field Effect Transistor with Arch-Shaped Gate to Improve ON-State Current, IEEE Transactions on Electron Devices 2023, 70(10), 4980-4986   https://ieeexplore.ieee.org/document/10223710

(23) Xiaoqiao, Yabin Sun*, Ziyu Liu*, Xiaojin Li, and Yanling Shi, Compact Modeling of Process Variations in Nanosheet Complementary FET (CFET) and Circuit Performance Predictions, IEEE Transactions on Electron Devices 2023, 70(7), 3935-3942   https://ieeexplore.ieee.org/document/10138802

(22) Rui Zhang, Yabin Sun*, Ziyu Liu*, Yun Liu, Xiaojin Li, and  Yanling Shi, Novel 3D Fin-RFET with Dual-Doped  Source/Drain to Improve ON-state Current, IEEE Transactions on Electron Devices 2022, 69(12), 6569-6575   https://ieeexplore.ieee.org/document/9940288

(21) Xiaoqiao Yang, Yabin Sun*, Ziyu Liu*, Xiaojin Li, Yun Liu, Yanling Shi, 3-D Modeling of Fringe Gate Capactiance in Complementary FET(CFET), IEEE Transactions on Electron Devices 2022, 69(11), 5978-5984   https://ieeexplore.ieee.org/document/9912378

(20) Ziyu Liu*, Han Jiang, Ziyuan Zhu, Yain Sun*, Lin Chen, Qingqing Sun,  Thermal-Mechanical and Signal Reliability of a New Differentiated TSV, IEEE Transactions on Electron Devices 2022, 69(10), 5766-5772   https://ieeexplore.ieee.org/document/9868336

(19) Zhangjun Shi, Xiaojin Li*, Yabin Sun, Yanling Shi, Co-optimization between Static and Switching Characteristics of LDMOS with P-type Trapezoidal Gate Embedded in Drift Region, IEEE Transactions on Electron Devices 2022, 69(8), pp.4102-4208   https://ieeexplore.ieee.org/document/9793565

(18) Xiaoqiao Yang, Xianglong Li, Yabin Sun*, Ziyu Liu*, Yunliu, Xiaojin Li and Yanling Shi, Impact of Process Variation on Nanosheet Gate-all-around Complementary FET (CFET), IEEE Transactions on Electron Devices,2022, 69(7), pp.4029~4036  https://ieeexplore.ieee.org/document/9786007

(17) Yang Shen^#, Zuoyuan Dong^#, Yabin Sun^#, Hao Guo^#, Fan Wu, Xianglong Li, Jun Tang, Jun Liu, Xing Wu, He Tian, Tian-Ling Ren, The trend of 2D transistors toward integrated circuits: Scaling down and new mechanisms, Advanced Material, 2022,   https://onlinelibrary.wiley.com/doi/10.1002/adma.202201916

(16) Yabin Sun, Meng Wang, Xianglong Li, Shaojian Hu, Ziyu Liu, Xiaojin Li, Yun Liu and Yanling Shi, Improved MEOL and BEOL Parasitic-Aware Design Technology Co-Optimization for 3 nm Gate-All-Around Nanosheet Transistor, IEEE Transactions on Electron Devices, 2022, 69(2), pp.462-468  https://ieeexplore.ieee.org/document/9664270

(15) Fan Wu, He Tian, Yang Shen, Zhan Hou, Jie Ren, Guangyang Gou, Yabin Sun, Yi Yang, Tian-Ling Ren, Vertical MoS2 transistors with sub-1-nm gate lengths, Nature, 2022, 603, 259-264  https://www.nature.com/articles/s41586-021-04323-3

(14)  Yabin Sun, Gaohengbin, Xianglong Li, Xiaoqiao Yang, Ziyu Liu, Xiaojin Li and Yanling Shi, Impact of Process Fluctuations on RF Small-Signal Parameter of Gate-All-Around Nanosheet Transistor Beyond 3 nm Node,  IEEE Transactions on Electron Devices 2022, 69(1), 31-38  https://ieeexplore.ieee.org/document/9640239

(13)  Yabin Sun, Xianglong Li, Ziyu Liu, Yanling Shi, Xiaojin Li, Vertically Stacked Nanosheets Tree-type Reconfigurable Transistor with Improved On-Current, IEEE Transactions on Electron Devices 2022, 69(1), 370-374   https://ieeexplore.ieee.org/document/9629261

(12) Renhua Liu, Xiaojin Li, Yabin Sun, Fei Li, Yanling Shi, Thermal Coupling Among Channels and Its DC Modeling in sub-7-nm Vertically Stacked Nanosheet Gate-All-Around Transistor, IEEE Transactions on Electron Devices 2021, 68(12), 6563-6570   https://ieeexplore.ieee.org/document/9604070

(11) Yabin Sun, Jinyan Shao,Ziyu Liu, Teng Wang, Yanling Shi, Xiaojin Li, Evaluation of Single-Event-Transient Effects in Reconfigurable Field Effect Transistor Beyond 3 nm Technology Node, IEEE Transactions on Electron Devices, 2021, 68(12), 6001~6006   https://ieeexplore.ieee.org/document/9576088

(10) Lan Liu, Chunsen Liu, Lilai Jiang, Jiayi Li, Yi Ding, Shuiyuan Wang, Yu-Gang Jiang, Yabin Sun, Jianlu Wang, Shiyou Chen, David Wei Zhang, Peng Zhou, Ultrafast non-volatile flash memory based on van der Waals heterostructures, Nature Nanotechnology, 2021, 16, 874–881  https://www.nature.com/articles/s41565-021-00921-4

(9) Xianglong Li, Yabin Sun*, Xiaojin Li and Yanling Shi, Impact of Process Fluctuations on  Reconfigurable Silicon Nanowire  Transistor, IEEE Transactions on Electron Devices, 2021, 68(2), 885-891  https://ieeexplore.ieee.org/document/9321221

(8) Xianglong Li, Yabin Sun*, Xiaojin Li, Yanling Shi, Analysis of Metal Work-Function Modulation Effect in Reconfigurable Field Effect Transistor, IEEE Transactions on Electron Devices, 2020, 67(9), 3745-3752  https://ieeexplore.ieee.org/document/9145649

(7) Renhua Liu, Xiaojin Li, Yabin Sun, Yanling Shi, A Vertical Combo Spacer to Optimize Electrothermal Characteristics of 7-nm Nanosheet Gate-All-Around Transistor, IEEE Transactions on Electron Devices, 2020,67(6), 2249-2254  https://ieeexplore.ieee.org/document/9085955

(6) Xianglong  Li, Yabin Sun*, Xiaojin Li, Yanling Shiet.al, Electronic Assessment of Novel Arch-shaped Asymmetrical Reconfigurable Field-Effect Transistor, IEEE Transactions on Electron Devices, 2020,67(4),1894-1901   https://ieeexplore.ieee.org/document/9018250

(5) Yan Yao, Yabin Sun*, Xiaojin Li, Yanling Shi et.al, Novel Reconfigurable Field-effect Transistor with Asymmetric Spacer Engineering at Drain Side, IEEE Transactions on Electron Devices, 2020, 67(2),751-757   https://ieeexplore.ieee.org/document/8959371

(4) Junya Sun, Xiaojin Li*, Yabin Sun*, and Yanling Shi, Impact of Geometry, Doping, Temperature, and Boundary Conductivity on Thermal Characteristics of 14-nm Bulk and SOI FinFETs, IEEE Transactions on Device and Materials Reliability, 2020, 20(1), 119-127 https://ieeexplore.ieee.org/document/8951282

(3) Xiaojin Li, Jian Qing,Yabin Sun*, Yan Zeng, Yanling Shi and Yuheng Wang, Analytical Layout Dependent NBTI Degradation Modeling Based on Non-Uniformly Distributed Interface Traps, IEEE Transactions on Device and Materials Reliability 2018, 18(3), 397-403  https://ieeexplore.ieee.org/document/8396308

(2) Xiaojin Li, Jian Qing,Yabin Sun*,Yan Zeng, Yanling Shi and Yuheng Wang, Linear and Resolution Adjusted On-chip Aging Detecting of NBTI Degradation, IEEE Transactions on Device and Materials Reliability, 2018, 18(3), 383-390   https://ieeexplore.ieee.org/document/8385177

(1) Yabin Sun, Jun Fu, Ji Yang, Jun Xu, Yudong Wang, Wei Zhou, Jie Cui, Gaoqing Li, Zhihong Liu, An Improved Small-Signal Model for SiGe HBT Under Off-state, Derived from Distributed Network and Corresponding Model Parameter Extraction, IEEE Transactions on Microwave Theory and Techniques, 63(10), 3131-3141, Oct. 2015  https://ieeexplore.ieee.org/document/7219472

2023年国家级青年拔尖人才计划；

2017年上海市扬帆人才计划;

指导学生参加全国集成电路领域竞赛获奖：

2023年，指导研究生参加第六届华为杯中国研究生创“芯”大赛  全国二等奖，概伦电子企业二等奖

2022年，指导研究生参加第六集全国大学生集成电路创新创业大赛  全国一等奖（优秀指导教师）、华东赛区一等奖

2022年，指导本科生参加第六集全国大学生集成电路创新创业大赛  全国优秀奖（优秀指导教师）、华东赛区一等奖

2022年，指导研究生参加第五届华为杯中国研究生创“芯”大赛  全国二等奖，华大九天企业二等奖

2021年，指导研究生参加第四届华为杯中国研究生创“芯”大赛  全国二等奖

2018年，指导研究生参加首届华为杯中国研究生创“芯”大赛    全国二等奖