沈阳

2015年9月-2019年6月 合肥工业大学  微电子科学与工程   学士

2019年9月-2024年7月 清华大学  集成电路学院 博士

2024年9月至今  华东师范大学  副教授

(1) 新型半导体器件制备与模拟

(2) 工艺-器件-电路多尺度协同优化

(3) 后摩尔时代先进器件量子输运模拟

(1) Wu F^#, Tian H^#, Shen Yang^#, et al. Vertical MoS2 transistors with sub-1-nm gate lengths[J]. Nature, 2022, 603(7900): 259-264.(IF：50.5, #:equally contributed author)

(2) Shen Yang, Zhang Z, et al. A valuable and low-budget process scheme of equivalized 1 nm technology node based on 2D materials[J]. Nano-Micro Letters, 2025, 17(191). (IF：31.6)

(3) Shen Yang, Dong Z, Sun Y, et al. The trend of 2D transistors toward integrated circuits: scaling down and new mechanisms[J]. Advanced Materials, 2022, 34(48): 2201916. (Cover article, IF：30.2)

(4) Shen Yang*, Wang Z, Li C, Zhao Y, Ye B, Zhang Y, Tian H*, Sun Y*. Projected performance of nanowire transistor with sub-1nm gate length[J]. IEEE Electron Device Letter (accepted). (IF：4.9)

(5) Shen Yang, Gao J, Guo Z, et al. RRAM mirrored and RRAM-transistor hybrid single device logic gates based on two-dimensional materials[J]. IEEE Electron Device Letters, 2023. (IF：4.9)

(6) Shen Yang, Pan Z, Guo Z, et al. RRAM-based single device for vector multiplication and multi-bit storage with ultra-high area efficiency[J]. IEEE Transactions on Electron Devices, 2025. (IF：2.9)

(7) Zou X, Gong F, Jin M, Liu Z, Li X, Shen Yang*, Yabin Sun*, et al. Evaluation of 1T-DRAM Based on Novel Triple Gate Nanosheet RFET with Surrounded SiGe  Channel[J]. IEEE Transactions on Electron Devices, 2025. (IF：2.9)

(8) Zhao J, Zou X, Shen Yang*, Zhang Y, Ye B, Li X, Liu Z*, Shi Y, Chen S, Lu F, Dong X and Yabin Sun*, Novel Complementary Field-Effect Transistors with Tree-type Channel for 3nm Technology Node. IEEE Transactions on Electron Devices, 2025. (IF：2.9)

(9) Shen Yang, Tian H, Ren T. Simulation of MoS2 stacked nanosheet field effect transistor[J]. Journal of Semiconductors, 2022, 43(8): 082002. (Cover article，IF：5.1)

(10) Shen Yang, Tian H*, Liu Y, Ren T* et al. Modeling of Gate Tunable Synaptic Device for Neuromorphic Applications[J]. Frontiers in Physics, 2021, 9: 777691. (IF：3.1)

(11) Tian H^#, Shen Yang^#, Yan Z, et al. The insight and evaluation of ultra-scaled sub-1 nm gate length transistors[J]. Microelectronic Engineering, 2023, 273: 111963. (IF：2.3)

(12) Wu F^#, Tian H^#, Shen Yang^#, et al. High thermal conductivity 2D materials: From theory and engineering to applications[J]. Advanced Materials Interfaces, 2022, 9(21): 2200409. (Cover article，IF：5.7)