个人资料
教育经历2015年9月-2019年6月 合肥工业大学 微电子科学与工程 学士 2019年9月-2024年7月 清华大学 集成电路学院 博士 工作经历2024年9月至今 华东师范大学 副教授 个人简介社会兼职研究方向(1) 小尺寸二维半导体器件制备与仿真 (2) 从底层器件到电路的跨尺度协同优化 (3) 小尺寸晶体管的量子输运模拟 招生与培养开授课程科研项目学术成果[1] Wu F#, Tian H#, Shen Yang#, et al. Vertical MoS2 transistors with sub-1-nm gate lengths[J]. Nature, 2022, 603(7900): 259-264.(IF：64.8, #:equally contributed author) [2] Shen Yang, Dong Z, Sun Y, et al. The trend of 2D transistors toward integrated circuits: scaling down and new mechanisms[J]. Advanced Materials, 2022, 34(48): 2201916. (Cover article, IF：30.2) [3] Shen Yang, Gao J, Guo Z, et al. RRAM mirrored and RRAM-transistor hybrid single device logic gates based on two-dimensional materials[J]. IEEE Electron Device Letters, 2023. (IF：4.9) [4] Shen Yang, Pan Z, Guo Z, et al. RRAM-based single device for vector multiplication and multi-bit storage with ultra-high area efficiency[J]. IEEE Transactions on Electron Devices, 2025. (IF：2.9) [5] Shen Yang, Tian H, Ren T. Simulation of MoS2 stacked nanosheet field effect transistor[J]. Journal of Semiconductors, 2022, 43(8): 082002. (Cover article，IF：5.1) [6] Shen Yang, Tian H, Liu Y, et al. Modeling of Gate Tunable Synaptic Device for Neuromorphic Applications[J]. Frontiers in Physics, 2021, 9: 777691. (IF：3.1) [7] Tian H#, Shen Yang#, Yan Z, et al. The insight and evaluation of ultra-scaled sub-1 nm gate length transistors[J]. Microelectronic Engineering, 2023, 273: 111963. (IF：2.3) [8] Wu F#, Tian H#, Shen Yang#, et al. High thermal conductivity 2D materials: From theory and engineering to applications[J]. Advanced Materials Interfaces, 2022, 9(21): 2200409. (Cover article，IF：5.7) 欢迎热爱科研、愿意致力于推进先进半导体器件应用的本科生和研究生加入！ 荣誉及奖励 |
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沈阳 |