高兆猛

2018-2022 中国科学院大学微电子研究所 博士

2022-2025 华东师范大学 博士后

新型氧化物铁电存储材料与器件

主持 上海市“科技创新行动计划”自然科学基金面上项目  20万

近五年
发表学术/会议论文：

(1) Yunzhe Zheng^#, Qiwendong Zhao^#, Zhaomeng Gao^*, et al. Polarization degradation and recovery strategies of hafnia-based ferroelectric capacitors after thermal budget in Back-End of Line process. IEEE International Electron Devices Meeting (IEDM), 3-8, 2024.

(2) Zhaomeng Gao^#, Tianjiao Xin^#, Kai Du, et al. Polar axis orientation control of hafnium-based ferroelectric capacitors with in-situ AC electric bias during rapid thermal annealing. IEEE Symposium on VLSI Technology and Circuits (VLSI), T2-2, 2024.         

(3) Yan Cheng^#, Zhaomeng Gao^#, Kun Hee Ye, et al. Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO₂-based ferroelectric thin film. Nature Communications, 13(1), 645, 2022.

(4) Zhaomeng Gao^#, Weifeng Zhang^#, Qilan Zhong, et al. Giant electroresistance in hafnia-based ferroelectric tunnel junctions via enhanced polarization.Device, 1, 100004, 2023.

(5) Zhaomeng Gao^#, Yunzhe Zheng^#, Tianjiao Xin, et al. The Fluctuation Effect of Remnant Polarization in Hf_0.5Zr_0.5O₂ Capacitors at Elevated Temperature.IEEE Electron Device Letters,45, 1788-1791, 2024.

(6) Yiwei Wang^#, Qilan Zhong^#,Zhaomeng Gao^*, et al. Texture in atomic layer deposited Hf_0.5Zr_0.5O₂ ferroelectric thin films. Ceramics International, 02, 200, 2024.

(7)Zhaomeng Gao^#, Tianjiao Xin^#, Cheng liu, et al. Reversible and irreversible polarization degradation of Hf_0.5Zr_0.5O₂ capacitors with coherent structural transition at elevated temperatures. IEEE International Reliability Physics Symposium (IRPS), 7A-2, 2024.

(8) Zhaomeng Gao, Yubo Luo, Shuxian Lyu, et al. Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf_0.5Zr_0.5O₂ Film.IEEE Electron Device Letters, 42, 1303-1306, 2021.

(9)Zhaomeng Gao, Shuxian Lyu, Hangbing Lyu^*. Frequency dependence on polarization switching measurement in ferroelectric capacitors, Journal of Semiconductors, 43, 014102, 2022.                      

发明专利：

1) 一种铪基铁电薄膜氧缺陷含量控制方法，2024-12-09，CN202411795696.1

2) 铁电存储单元、制备方法及铁电存储器，2023-08-12，CN202311040977.1