光电子材料、器件与物理

          半导体材料及其低维结构的光学与电子性质

          铁电以及铁磁极化材料的光电特性等

          博士研究生：微电子学与固体电子学
        硕士研究生：物理电子学、微电子学与固体电子学

      欢迎有志于在以上方向从事科学研究的硕士生、博士生和博士后加入本研究小组。

       德国洪堡学者(Humboldt Fellow)‚兼任《Advanced Materials》、《Physical Review Letters》以及《Physical Review B》等国际著名学术期刊的评审员。

       2004年3月在中国科学院上海技术物理研究所获理学博士学位‚导师褚君浩院士。2004年3月至2007年2月分别在美国佐治亚州州立大学(Georgia State University)和德国海德堡大学(University of Heidelberg)从事博士后研究工作。2007年4月起任华东师范大学信息科学技术学院教授‚博士生导师‚现任电子工程系副系主任。2007年入选上海市”浦江人才计划“‚2008年入选教育部“新世纪优秀人才支持计划”。近年来在铁电薄膜材料、导电金属氧化物薄膜、纳米金刚石薄膜、III-V族材料以及III-N稀磁半导体材料的光电特性研究方面取得了一系列的创新成果。在APL、PRB以及JAP等著名期刊上发表SCI收录国际学术刊物论文60多篇‚出版国际英文学术专著章节1章。目前实验室配备有各类先进的光谱仪、强磁场深低温测量系统以及各种光电响应测试设备等。

目前承担的主要科研项目：
5. 国家重大科学研究计划(973 项目)：窄禁带半导体低维结构的自旋调控和自旋光场耦合效应 (2007.07-2011.12)

4. 上海市教委科研创新重点项目：微纳米尺度下过渡金属氧化物的制备及其电荷和自旋极化调控 (2009.01-2011.12)

3. 上海市科委基础研究重点项目：新型宽禁带极化材料及其低维结构的设计、制备与光电子特性 (2008.09-2010.09)

2. 上海研发公共服务平台建设专项项目：极化材料多功能磁光光谱技术服务平台 (2007.12-2009.08)
1. 上海市“浦江人才”计划项目：宽带隙铁电薄膜材料及其纳米结构的光电性能研究 (2007.10-2009.09)

代表性著作：
01. Z.G. Hu‚ Z.M. Huang‚ and J.H. Chu‚ Optical characterizations of ferroelectric Bi_3.25La_0.75Ti₃O₁₂ thin films from NIR to UV regions using spectroscopic ellipsometry‚ Trends in Semiconductor Research edited by Thomas B. Elliot‚ Chapter 5‚ page: 111-136‚ ISBN: 1-59454-414-X (Nova Science Publishers‚ Inc. NY‚ 2005).

代表性论文：

26. Z.G. Hu‚ W.W. Li‚ Y.W. Li‚ M. Zhu‚ Z.Q. Zhu‚ and J.H. Chu‚ Electronic properties of nanocrystalline LaNiO₃ and La_0.5Sr_0.5CoO₃ conductive films grown on silicon substrates determined by infrared to ultraviolet reflectance spectra‚ Appl. Phys. Lett. 94 (22): 221104 (1-3) (2009).
25. Z.G. Hu‚ W.W. Li‚ J.D. Wu‚ J. Sun‚ Q.W. Shu‚ X.X. Zhong‚ Z.Q. Zhu‚ and J.H. Chu‚ Optical properties of pulsed laser deposited rutile titanium dioxide films on quartz substrates determined by Raman scattering and transmittance spectra‚ Appl. Phys. Lett. 93 (18): 181910 (1-3) (2008).
24. Y.W. Li‚ Z.G. Hu‚ F.Y. Yue‚ Y.N. Qian‚ W.J. Cheng‚ X.M. Ma‚ and J.H. Chu‚ Oxygen-vacancy-related dielectric relaxation in BiFeO₃ films grown by pulsed laser deposition‚ J. Phys. D: Appl. Phys. 41 (21): 215403 (1-4) (2008).
23. Z.G. Hu‚ Y.W. Li‚ M. Zhu‚ F.Y. Yue‚ Z.Q. Zhu‚ and J.H. Chu‚ Growth and ellipsometric characterizations of highly (111)-oriented Bi₂Ti₂O₇ films on platinized silicon by metal organic decomposition method‚ J. Vac. Sci. Technol. A 26 (5): 1287-1292 (2008).
22. Z.G. Hu‚ Y.W. Li‚ M. Zhu‚ Z.Q. Zhu‚ and J.H. Chu‚ Structure and optical properties of ferroelectric PbZr_0.4Ti_0.6O₃ films grown on LaNiO₃-coated platinized silicon determined by infrared spectroscopic ellipsometry‚ J. Phys. Chem. C 112 (26): 9737-9743 (2008).
21. Z.G. Hu‚ Y.W. Li‚ M. Zhu‚ Z.Q. Zhu‚ and J.H. Chu‚ Microstructural and optical investigations of sol-gel derived ferroelectric BaTiO₃ nanocrystalline films determined by spectroscopic ellipsometry‚ Phys. Lett. A 372 (24): 4521-4526 (2008).
20. A.B. Weerasekara‚ Z.G. Hu‚ N. Dietz‚ A.G.U. Perera‚ A. Asghar‚ M.H. Kane‚ M. Strassburg‚ and I.T. Ferguson‚ Optical properties of n-doped Ga_1-xMn_xN epitaxial layers grown by metal-organic chemical-vapor deposition in mid and far (5−50 µm) IR range‚ J. Vac. Sci. Technol. B 26 (1): 52-55 (2008).
19. Z.G. Hu‚ Y.W. Li‚ M. Zhu‚ Z.Q. Zhu‚ and J.H. Chu‚ Composition dependence of dielectric functions in ferroelectric BaCo_xTi_1-xO₃ films grown on quartz substrates by transmittance spectra‚ Appl. Phys. Lett. 92 (8): 081904 (1-3) (2008).
18. Y.W. Li‚ Z.G. Hu‚ J.L. Sun‚ X.J. Meng‚ and J.H. Chu‚ Effect of LaNiO₃ bottom electrode on structural and dielectric properties of CaCu₃Ti₄O₁₂ thin films fabricated by sol-gel method‚ Appl. Phys. Lett. 92 (4): 042901 (3 pages) (2008).
17. Y.W. Li‚ Z.G. Hu‚ F.Y. Yue‚ G.Y. Yang‚ W.Z. Shi‚ X.J. Meng‚ J.L. Sun‚ and J.H. Chu‚ Properties of highly (100) oriented Pb(Mg_1/3‚Nb_2/3)O₃-PbTiO₃ films on LaNiO₃ bottom electrodes‚ Appl. Phys. Lett. 91 (23): 232912 (3 pages) (2007).
16. Z.G. Hu‚ Y.W. Li‚ F.Y. Yue‚ Z.Q. Zhu‚ and J.H. Chu‚ Temperature dependence of optical band gap in ferroelectric Bi_3.25La_0.75Ti₃O₁₂ films determined by ultraviolet transmittance measurements‚ Appl. Phys. Lett. 91 (22): 221903 (1-3) (2007).
15. Z.G. Hu‚ A.B. Weerasekara‚ N. Dietz‚ A.G.U. Perera‚ M. Strassburg‚ A. Asghar‚ M.H. Kane‚ and I.T. Ferguson‚ Infrared optical anisotropy of diluted magnetic Ga_1-xMn_xN/c-sapphire epilayers with a GaN buffer layer by metalorganic chemical vapor deposition‚ Phys. Rev. B 75 (20): 205320 (1-8) (2007).
14. Z.G. Hu‚ and P. Hess‚ Optimization of the incident angle in infrared spectroscopic ellipsometry: spectra of C₁₈-alkylthiol monolayers‚ J. Vac. Sci. Technol. A 25 (3): 601-606 (2007).
13. Z.G. Hu‚ and P. Hess‚ Optical constants and thermo-optic coefficients of nanocrystalline diamond films at 30-500 °C‚ Appl. Phys. Lett. 89 (8): 081906 (3 pages) (2006); Also appear in Virtual Journal of Nanoscale Science & Technology 14 (10) (2006).
12. Z.G. Hu‚ P. Prunici‚ P. Patzner‚ and P. Hess‚ Infrared spectroscopic ellipsometry of n-alkylthiol (C₅-C₁₈) self-assembled monolayers on gold‚ J. Phys. Chem. B 110 (30): 14824-14831 (2006).
11. Z.G. Hu‚ M. Strassburg‚ A. Weerasekara‚ N. Dietz‚ A.G.U. Perera‚ M.H. Kane‚ A. Asghar‚ and I.T. Ferguson‚ Lattice vibrations in hexagonal Ga_1-xMn_xN epitaxial films on c-plane sapphire substrates by infrared reflectance spectra‚ Appl. Phys. Lett. 88 (6): 061914 (1-3) (2006).
10. Z.G. Hu‚ M.B.M. Rinzan‚ A.G.U. Perera‚ Y. Paltiel‚ A. Raizman‚ A. Sher‚ and M. Zhu‚ Longitudinal-optical phonon hole plasmon coupled modes in heavily doped p-type GaSb:Zn epitaxial films‚ Eur. Phys. J. B: Condensed Matter 50 (3): 403-410 (2006).
09. Z.G. Hu‚ M. Strassburg‚ N. Dietz‚ A.G.U. Perera‚ A. Asghar‚ and I.T. Ferguson‚ Composition dependence of the infrared dielectric functions in Si-doped hexagonal Al_xGa_1-xN films on c-plane sapphire substrates‚ Phys. Rev. B 72 (24): 245326 (1-10)  (2005).
08. Z.G. Hu‚ A.G.U. Perera‚ Y. Paltiel‚ A. Raizman‚ and A. Sher‚ Zn-doped GaSb epitaxial film absorption coefficients at terahertz frequencies and detector applications‚ J. Appl. Phys. 98 (2): 023511 (1-5) (2005).
07. Z.G. Hu‚ M.B.M. Rinzan‚ S.G. Matsik‚ A.G.U. Perera‚ G.Von Winckel‚ A. Stintz‚ and S. Krishna‚ Optical characterizations of heavily doped p-type Al_xGa_1-xAs and GaAs epitaxial films at terahertz frequencies‚ J. Appl. Phys. 97 (9): 093529 (1-7) (2005).
06. Z.G. Hu‚ F.W. Shi‚ Z.M. Huang‚ Y.N. Wu‚ G.S. Wang‚ and J.H. Chu‚ Spectroscopic ellipsometry of (Pb_1-xLa_x)Ti_1-x/4O₃ ferroelectric thin films in the mid-infrared spectral region‚ Appl. Phys. A: Mater. Sci. Process. 80 (4): 841-846 (2005).
05. Z.G. Hu‚ Z.M. Huang‚ Y.N. Wu‚ S.H. Hu‚ G.S. Wang‚ J.H. Ma‚ and J.H. Chu‚ Optical characterization of ferroelectric Bi_3.25La_0.75Ti₃O₁₂ thin films‚ Eur. Phys. J. B: Condensed Matter 38 (3): 431-436 (2004).
04. Z.G. Hu‚ Z.M. Huang‚ Y.N. Wu‚ G.S. Wang‚ X.J. Meng‚ F.W. Shi‚ and J.H. Chu‚ Spectroscopic-ellipsometry characterization of the interface layer of PbZr_0.40Ti_0.60O₃/LaNiO₃/Pt multilayer thin films‚ J. Vac. Sci. Technol. A 22 (4): 1152-1157 (2004).
03. Z.G. Hu‚ Z.M. Huang‚ Y.N. Wu‚ Q. Zhao‚ G.S. Wang‚ and J.H. Chu‚ Ellipsometric characterization of LaNiO_3-x films grown on Si (111) substrates: Effects of oxygen partial pressure‚ J. Appl. Phys. 95 (8): 4036-4041 (2004).
02. Z.G. Hu‚ G.S. Wang‚ Z.M. Huang‚ X.J. Meng‚ Q. Zhao‚ and J.H. Chu‚ Effects of thickness on the infrared optical properties of Ba_0.9Sr_0.1TiO₃ ferroelectric thin films‚ Appl. Phys. A: Mater. Sci. Process. 78 (5): 757-760 (2004).
01. Z.G. Hu‚ F.W. Shi‚ T. Lin‚ Z.M. Huang‚ G.S. Wang‚ Y.N. Wu‚ and J.H. Chu‚ Infrared spectroscopic ellipsometry of (Pb‚ La)(Zr‚ Ti)O₃ thin films on platinized silicon‚ Phys. Lett. A 320 (5-6): 478-486 (2004).

招生方向：

博士研究生：微电子学与固体电子学
硕士研究生：物理电子学、微电子学与固体电子学 

光电子材料、器件与物理
凝聚态物质光谱和光学性质
半导体材料生长及光电特性等